KR20050009577A - 반도체 소자의 제조 방법 - Google Patents
반도체 소자의 제조 방법 Download PDFInfo
- Publication number
- KR20050009577A KR20050009577A KR1020030049327A KR20030049327A KR20050009577A KR 20050009577 A KR20050009577 A KR 20050009577A KR 1020030049327 A KR1020030049327 A KR 1020030049327A KR 20030049327 A KR20030049327 A KR 20030049327A KR 20050009577 A KR20050009577 A KR 20050009577A
- Authority
- KR
- South Korea
- Prior art keywords
- ion implantation
- heat treatment
- nickel
- gate electrode
- film
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims abstract description 48
- 238000005468 ion implantation Methods 0.000 claims abstract description 45
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 25
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- -1 nitrogen ions Chemical class 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 4
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- 230000000087 stabilizing effect Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 150000002500 ions Chemical class 0.000 description 9
- 238000002955 isolation Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- 229910017052 cobalt Inorganic materials 0.000 description 6
- 239000010941 cobalt Substances 0.000 description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910015890 BF2 Inorganic materials 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- 229910018098 Ni-Si Inorganic materials 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 229910018529 Ni—Si Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BMSYAGRCQOYYMZ-UHFFFAOYSA-N [As].[As] Chemical compound [As].[As] BMSYAGRCQOYYMZ-UHFFFAOYSA-N 0.000 description 1
- KPSZQYZCNSCYGG-UHFFFAOYSA-N [B].[B] Chemical compound [B].[B] KPSZQYZCNSCYGG-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910001439 antimony ion Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- XIKYYQJBTPYKSG-UHFFFAOYSA-N nickel Chemical compound [Ni].[Ni] XIKYYQJBTPYKSG-UHFFFAOYSA-N 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66492—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a pocket or a lightly doped drain selectively formed at the side of the gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (4)
- 게이트 전극 및 정션영역이 형성된 반도체 기판이 제공되는 단계;전체 구조상에 니켈을 증착한 다음, 제 1 열처리 공정을 실시하여 상기 게이트 전극 및 상기 정션영역 상에 실리사이드막을 형성하는 단계;잔류하는 상기 니켈을 제거하는 단계; 및질소 이온주입과 제 2 열처리 공정을 실시하여 상기 실리사이드막을 열적으로 안정화하는 단계를 포함하는 반도체 소자의 제조 방법.
- 제 1 항에 있어서,상기 제 1 열처리 공정으로 30 내지 50℃/sec의 승온속도 범위의 RTP 장비를 이용하여 100% N2분위기와 400 내지 600℃ 온도범위에서 약 30 내지 120초간 실시하는 반도체 소자의 제조 방법.
- 제 1 항에 있어서,상기 질소 이온주입은 3 내지 13KeV의 이온 주입 에너지로 1.0E15 내지 1.0E16atoms/㎠의 질소 이온을 주입하는 반도체 소자의 제조 방법.
- 제 1 항에 있어서,상기 제 2 열처리 공정은 100% N2분위기와 400 내지 700℃온도를 유지하면서 30 내지 120초 동안 실시하는 반도체 소자의 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030049327A KR101024637B1 (ko) | 2003-07-18 | 2003-07-18 | 반도체 소자의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030049327A KR101024637B1 (ko) | 2003-07-18 | 2003-07-18 | 반도체 소자의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050009577A true KR20050009577A (ko) | 2005-01-25 |
KR101024637B1 KR101024637B1 (ko) | 2011-03-25 |
Family
ID=37222290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030049327A KR101024637B1 (ko) | 2003-07-18 | 2003-07-18 | 반도체 소자의 제조 방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR101024637B1 (ko) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH098297A (ja) * | 1995-06-26 | 1997-01-10 | Mitsubishi Electric Corp | 半導体装置、その製造方法及び電界効果トランジスタ |
KR100286341B1 (ko) * | 1998-05-18 | 2001-05-02 | 김영환 | 모스트랜지스터제조방법 |
JP3676276B2 (ja) * | 2000-10-02 | 2005-07-27 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
KR20030060459A (ko) * | 2002-01-09 | 2003-07-16 | 주식회사 하이닉스반도체 | 반도체장치의 제조 방법 |
-
2003
- 2003-07-18 KR KR1020030049327A patent/KR101024637B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR101024637B1 (ko) | 2011-03-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100840661B1 (ko) | 반도체 소자 및 그의 제조방법 | |
KR100574172B1 (ko) | 반도체 소자의 제조방법 | |
KR101022854B1 (ko) | 도핑된 고유전 측벽 스페이서들을 구비한 전계 효과트랜지스터의 드레인/소스 확장 구조 | |
KR100580796B1 (ko) | 반도체 소자의 제조 방법 | |
KR101024637B1 (ko) | 반도체 소자의 제조 방법 | |
KR100475538B1 (ko) | 반도체 소자의 제조방법 | |
KR101024639B1 (ko) | 반도체 소자의 제조 방법 | |
KR100940438B1 (ko) | 반도체 소자의 제조 방법 | |
KR100908387B1 (ko) | 반도체 소자의 제조 방법 | |
KR101016337B1 (ko) | 반도체 소자의 제조 방법 | |
KR100588784B1 (ko) | 반도체 소자 제조방법 | |
KR100800777B1 (ko) | 반도체 소자의 제조방법 | |
KR100273323B1 (ko) | 반도체소자 및 그 제조방법 | |
KR100598284B1 (ko) | 반도체 소자 제조방법 | |
KR100561977B1 (ko) | 반도체 소자 제조 방법 | |
KR20010003692A (ko) | 반도체소자 제조방법 | |
KR100546812B1 (ko) | 반도체 소자 제조방법 | |
KR100572212B1 (ko) | 반도체 소자 제조 방법 | |
KR100228334B1 (ko) | 반도체 장치의 전계효과트랜지스터 제조방법 | |
KR101004811B1 (ko) | 트랜지스터 제조 방법 | |
KR101002046B1 (ko) | 반도체소자의 제조방법 | |
KR100567030B1 (ko) | 트랜지스터 제조 방법 | |
KR20050009622A (ko) | 반도체 소자의 제조 방법 | |
KR20040050117A (ko) | 반도체 소자의 제조 방법 | |
KR19990059173A (ko) | 반도체 장치의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
N231 | Notification of change of applicant | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
J201 | Request for trial against refusal decision | ||
AMND | Amendment | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20140218 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20150223 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20160219 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20170216 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20180221 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20190218 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20200218 Year of fee payment: 10 |