KR20040090315A - 액정표시장치의 반사판 제조 방법 - Google Patents
액정표시장치의 반사판 제조 방법 Download PDFInfo
- Publication number
- KR20040090315A KR20040090315A KR1020030024414A KR20030024414A KR20040090315A KR 20040090315 A KR20040090315 A KR 20040090315A KR 1020030024414 A KR1020030024414 A KR 1020030024414A KR 20030024414 A KR20030024414 A KR 20030024414A KR 20040090315 A KR20040090315 A KR 20040090315A
- Authority
- KR
- South Korea
- Prior art keywords
- liquid crystal
- crystal display
- light source
- polymer film
- light
- Prior art date
Links
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
- B05D3/061—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using U.V.
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/02—Function characteristic reflective
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (4)
- 절연기판 상에 고분자막을 형성하는 단계와,상기 기판 상부에 소정 패턴이 구비된 포토마스크 및 광원을 위치시키는 단계와,상기 광원을 이동하면서 상기 포토마스크를 통해 상기 고분자막에 광을 조사하고 현상처리하여 복수개의 구형 형상의 요철패턴을 형성하는 단계를 포함한 것을 특징으로 하는 액정표시장치의 반사판 제조 방법.
- 제 1항에 있어서, 상기 고분자막은 포지티브형 감광성 물질인 것을 특징으로 하는 액정표시장치의 반사판 제조 방법.
- 제 1항에 있어서, 상기 광 조사 공정에서, 상기 광원은 곡면 상을 이동하는 것을 특징으로 하는 액정표시장치의 반사판 제조 방법.
- 제 1항에 있어서, 상기 광 조사 공정에서, 상기 광원은 평면 상을 이동하는 것을 특징으로 하는 액정표시장치의 반사판 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030024414A KR100671519B1 (ko) | 2003-04-17 | 2003-04-17 | 액정표시장치의 반사판 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030024414A KR100671519B1 (ko) | 2003-04-17 | 2003-04-17 | 액정표시장치의 반사판 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040090315A true KR20040090315A (ko) | 2004-10-22 |
KR100671519B1 KR100671519B1 (ko) | 2007-01-19 |
Family
ID=37371465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030024414A KR100671519B1 (ko) | 2003-04-17 | 2003-04-17 | 액정표시장치의 반사판 제조 방법 |
Country Status (1)
Country | Link |
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KR (1) | KR100671519B1 (ko) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3213242B2 (ja) * | 1996-10-23 | 2001-10-02 | シャープ株式会社 | 反射板、反射型液晶表示装置およびその製造方法 |
JPH10284416A (ja) | 1997-04-10 | 1998-10-23 | Nikon Corp | 走査型露光装置及び方法 |
JP3565693B2 (ja) * | 1997-10-14 | 2004-09-15 | アルプス電気株式会社 | 反射体の製造方法及び製造装置 |
JP2000208410A (ja) | 1999-01-19 | 2000-07-28 | Sony Corp | 露光装置と拡散反射板及び反射型表示装置 |
JP2001168162A (ja) | 1999-12-08 | 2001-06-22 | Seiko Epson Corp | パターニング状態の検査方法及びこれを用いた電気光学装置の製造方法 |
-
2003
- 2003-04-17 KR KR1020030024414A patent/KR100671519B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR100671519B1 (ko) | 2007-01-19 |
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