KR20040087945A - 연마 패드, 그의 제조 방법 및 제조용 금형, 및 반도체웨이퍼의 연마 방법 - Google Patents
연마 패드, 그의 제조 방법 및 제조용 금형, 및 반도체웨이퍼의 연마 방법 Download PDFInfo
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- KR20040087945A KR20040087945A KR1020040024058A KR20040024058A KR20040087945A KR 20040087945 A KR20040087945 A KR 20040087945A KR 1020040024058 A KR1020040024058 A KR 1020040024058A KR 20040024058 A KR20040024058 A KR 20040024058A KR 20040087945 A KR20040087945 A KR 20040087945A
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- Prior art keywords
- polishing
- polishing pad
- pad
- abrasive
- water
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- RUTXIHLAWFEWGM-UHFFFAOYSA-H iron(3+) sulfate Chemical compound [Fe+3].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RUTXIHLAWFEWGM-UHFFFAOYSA-H 0.000 description 1
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- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
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- GEYXPJBPASPPLI-UHFFFAOYSA-N manganese(iii) oxide Chemical compound O=[Mn]O[Mn]=O GEYXPJBPASPPLI-UHFFFAOYSA-N 0.000 description 1
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- HFHDHCJBZVLPGP-UHFFFAOYSA-N schardinger α-dextrin Chemical compound O1C(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(O)C2O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC2C(O)C(O)C1OC2CO HFHDHCJBZVLPGP-UHFFFAOYSA-N 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- 150000003871 sulfonates Chemical class 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
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- 238000009864 tensile test Methods 0.000 description 1
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- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical class CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
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- 229910052720 vanadium Inorganic materials 0.000 description 1
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- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
Description
Claims (12)
- 연마 표면을 갖는 연마 기재, 및 연마 기재에 융착되고, 비수용성 매트릭스 재료 및 그 중에 분산된 수용성 물질을 포함하는 투광성 부재를 포함하는 연마 패드.
- 제1항에 있어서, 비수용성 매트릭스 재료의 적어도 일부가 가교 중합체인 연마 패드.
- 제2항에 있어서, 가교 중합체가 가교된 1,2-폴리부타디엔인 연마 패드.
- 제1항에 있어서, 투광성 부재가 연마 기재의 연마 표면에 대해 수직 방향으로 얇게 만들어진 연마 패드.
- 제1항에 있어서, 투광성 부재 및 연마 기재를 구성하는 재료의 종류 및(또는) 그 조성 비율이 서로 상이한 연마 패드.
- 제1항에 있어서, 연마 패드의 연마 표면에 대향하는 배면상에 형성되어 있고 연마기상에 연마 패드를 고정하기 위한 고정층을 갖는 연마 패드.
- 미리 형성된 연마 패드용 투광성 부재를 삽입 성형 (insert molding)용 금형의 공동 내의 소정 위치에 유지시키고, 공동 내의 잔존 공간으로 연마 기재의 재료를 주입하여 투광성 부재를 연마 기재에 융착시키는 것을 포함하는 제1항의 연마 패드의 제조 방법.
- 미리 형성된 투광성 부재 장착용 구멍을 갖는 연마 기재를 삽입 성형용 금형의 공동 내에 유지시키고, 투광성 부재의 재료를 투광성 부재 장착용 구멍에 주입하여 연마 기재를 투광성 부재에 융착시키는 것을 포함하는 제1항의 연마 패드의 제조 방법.
- 공동 내에 연마 패드용 연마 기재 또는 투광성 부재를 유지시키기 위한 돌출부(들) 및(또는) 함몰부(들)를 갖는 제1항의 연마 패드를 제조하기 위한 삽입 성형용 금형.
- 제1항의 연마 패드, 및 이 연마 패드의 연마 표면에 대향하는 배면상에 형성된 투광성을 갖는 지지층을 포함하는 연마 적층 패드.
- 제1항의 연마 패드, 이 연마 패드의 연마 표면에 대향하는 배면상에 형성된 지지층, 및 연마 패드에 대향하는 지지층의 면상에 형성되고 연마기상에 패드를 고정하기 위한 고정층을 포함하는 연마 적층 패드.
- 제1항의 연마 패드 또는 제10항 또는 제11항의 연마 적층 패드를 사용하고, 연마 패드 또는 연마 적층 패드의 투광성 부재를 통해서 광학식 종점 검출 장치로 반도체 웨이퍼의 연마 종점을 검출하는 것을 특징으로 하는, 연마 패드로 반도체 웨이퍼를 연마하는 방법.
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JP2003105924 | 2003-04-09 | ||
JPJP-P-2003-00105924 | 2003-04-09 |
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KR1020060064944A Division KR100710096B1 (ko) | 2003-04-09 | 2006-07-11 | 반도체 웨이퍼의 연마 방법 |
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KR20040087945A true KR20040087945A (ko) | 2004-10-15 |
KR100680691B1 KR100680691B1 (ko) | 2007-02-09 |
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KR1020040024058A KR100680691B1 (ko) | 2003-04-09 | 2004-04-08 | 연마 패드 및 그의 제조 방법 |
KR1020060064944A KR100710096B1 (ko) | 2003-04-09 | 2006-07-11 | 반도체 웨이퍼의 연마 방법 |
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Country Status (5)
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US (1) | US20040203320A1 (ko) |
EP (1) | EP1466699A1 (ko) |
KR (2) | KR100680691B1 (ko) |
CN (1) | CN1550288B (ko) |
TW (1) | TWI323207B (ko) |
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-
2004
- 2004-04-07 EP EP04008453A patent/EP1466699A1/en not_active Withdrawn
- 2004-04-08 US US10/820,123 patent/US20040203320A1/en not_active Abandoned
- 2004-04-08 TW TW093109789A patent/TWI323207B/zh not_active IP Right Cessation
- 2004-04-08 KR KR1020040024058A patent/KR100680691B1/ko active IP Right Grant
- 2004-04-09 CN CN2004100430985A patent/CN1550288B/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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TW200513344A (en) | 2005-04-16 |
KR100680691B1 (ko) | 2007-02-09 |
KR20060087489A (ko) | 2006-08-02 |
TWI323207B (en) | 2010-04-11 |
CN1550288A (zh) | 2004-12-01 |
KR100710096B1 (ko) | 2007-04-24 |
CN1550288B (zh) | 2010-05-05 |
EP1466699A1 (en) | 2004-10-13 |
US20040203320A1 (en) | 2004-10-14 |
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