KR20040086827A - 불휘발성 반도체 기억 장치 및 반도체 집적 회로 장치 - Google Patents

불휘발성 반도체 기억 장치 및 반도체 집적 회로 장치 Download PDF

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Publication number
KR20040086827A
KR20040086827A KR1020040022968A KR20040022968A KR20040086827A KR 20040086827 A KR20040086827 A KR 20040086827A KR 1020040022968 A KR1020040022968 A KR 1020040022968A KR 20040022968 A KR20040022968 A KR 20040022968A KR 20040086827 A KR20040086827 A KR 20040086827A
Authority
KR
South Korea
Prior art keywords
current
control transistor
voltage
memory cell
nonvolatile memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020040022968A
Other languages
English (en)
Korean (ko)
Inventor
다나까도시히로
야마끼다까시
시나가와유따까
오까다다이스께
히사모또다이
야스이간
이시마루데쯔야
Original Assignee
가부시끼가이샤 르네사스 테크놀로지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 르네사스 테크놀로지 filed Critical 가부시끼가이샤 르네사스 테크놀로지
Publication of KR20040086827A publication Critical patent/KR20040086827A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D3/00—Cutting work characterised by the nature of the cut made; Apparatus therefor
    • B26D3/06—Grooving involving removal of material from the surface of the work
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D5/00—Arrangements for operating and controlling machines or devices for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
    • B26D5/08—Means for actuating the cutting member to effect the cut
    • B26D5/086—Electric, magnetic, piezoelectric, electro-magnetic means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D7/00—Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
    • B26D7/06—Arrangements for feeding or delivering work of other than sheet, web, or filamentary form
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D7/00—Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
    • B26D7/26—Means for mounting or adjusting the cutting member; Means for adjusting the stroke of the cutting member
    • B26D7/2628—Means for adjusting the position of the cutting member
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Forests & Forestry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020040022968A 2003-04-04 2004-04-02 불휘발성 반도체 기억 장치 및 반도체 집적 회로 장치 Withdrawn KR20040086827A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003101124 2003-04-04
JPJP-P-2003-00101124 2003-04-04
JP2004046699A JP4426868B2 (ja) 2003-04-04 2004-02-23 不揮発性半導体記憶装置および半導体集積回路装置
JPJP-P-2004-00046699 2004-02-23

Publications (1)

Publication Number Publication Date
KR20040086827A true KR20040086827A (ko) 2004-10-12

Family

ID=33100413

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040022968A Withdrawn KR20040086827A (ko) 2003-04-04 2004-04-02 불휘발성 반도체 기억 장치 및 반도체 집적 회로 장치

Country Status (4)

Country Link
US (2) US7085157B2 (enExample)
JP (1) JP4426868B2 (enExample)
KR (1) KR20040086827A (enExample)
TW (1) TW200506937A (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW546840B (en) 2001-07-27 2003-08-11 Hitachi Ltd Non-volatile semiconductor memory device
JP4346482B2 (ja) * 2004-03-25 2009-10-21 Ｎｅｃエレクトロニクス株式会社 不揮発性記憶装置及び不揮発性記憶装置の検証方法
JP2006222367A (ja) * 2005-02-14 2006-08-24 Oki Electric Ind Co Ltd 不揮発性半導体メモリ装置、駆動方法、及び製造方法
US7236402B2 (en) * 2005-11-30 2007-06-26 Freescale Semiconductor, Inc. Method and apparatus for programming/erasing a non-volatile memory
US7649791B2 (en) * 2006-03-28 2010-01-19 Andrea Martinelli Non volatile memory device architecture and corresponding programming method
US7580291B2 (en) * 2006-06-08 2009-08-25 Atmel Corporation Data register with efficient erase, program verify, and direct bit-line memory access features
US7961511B2 (en) * 2006-09-26 2011-06-14 Sandisk Corporation Hybrid programming methods and systems for non-volatile memory storage elements
US7376027B1 (en) * 2006-11-07 2008-05-20 Taiwan Semiconductor Manufacturing Co., Ltd. DRAM concurrent writing and sensing scheme
JP5164400B2 (ja) * 2007-03-12 2013-03-21 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP2010079977A (ja) * 2008-09-25 2010-04-08 Toppan Printing Co Ltd 定電流型電源回路を有する不揮発性半導体メモリ装置
CN102394109B (zh) * 2011-09-28 2016-08-03 上海华虹宏力半导体制造有限公司 闪存
US9093161B2 (en) 2013-03-14 2015-07-28 Sillicon Storage Technology, Inc. Dynamic programming of advanced nanometer flash memory
US11069411B2 (en) 2013-03-14 2021-07-20 Silicon Storage Technology, Inc. Programming circuit and method for flash memory array
KR102167609B1 (ko) 2014-05-13 2020-10-20 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 프로그램 방법
US9881683B1 (en) 2016-12-13 2018-01-30 Cypress Semiconductor Corporation Suppression of program disturb with bit line and select gate voltage regulation
KR102771883B1 (ko) 2019-07-22 2025-02-21 삼성전자주식회사 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 프로그램 방법
US11200952B2 (en) 2019-07-22 2021-12-14 Samsung Electronics Co., Ltd. Non-volatile memory device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1083689A (ja) * 1996-09-10 1998-03-31 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5852578A (en) * 1997-06-17 1998-12-22 Hoang; Loc B. Flash cell having self-timed programming
JPH11273388A (ja) * 1998-03-26 1999-10-08 Sanyo Electric Co Ltd 不揮発性半導体メモリ装置
KR100347866B1 (ko) * 1999-03-08 2002-08-09 삼성전자 주식회사 낸드 플래시 메모리 장치
US6388293B1 (en) * 1999-10-12 2002-05-14 Halo Lsi Design & Device Technology, Inc. Nonvolatile memory cell, operating method of the same and nonvolatile memory array
JP2001148434A (ja) 1999-10-12 2001-05-29 New Heiro:Kk 不揮発性メモリセルおよびその使用方法、製造方法ならびに不揮発性メモリアレイ
JP4043703B2 (ja) * 2000-09-04 2008-02-06 株式会社ルネサステクノロジ 半導体装置、マイクロコンピュータ、及びフラッシュメモリ
JP4084922B2 (ja) * 2000-12-22 2008-04-30 株式会社ルネサステクノロジ 不揮発性記憶装置の書込み方法
US6480419B2 (en) * 2001-02-22 2002-11-12 Samsung Electronics Co., Ltd. Bit line setup and discharge circuit for programming non-volatile memory
JP2002334588A (ja) 2001-05-11 2002-11-22 Seiko Epson Corp 不揮発性半導体記憶装置のプログラム方法
FR2826496A1 (fr) * 2001-06-25 2002-12-27 St Microelectronics Sa Memoire eeprom protegee contre les effets d'un claquage de transistor d'acces
KR100457159B1 (ko) 2001-12-26 2004-11-16 주식회사 하이닉스반도체 마그네틱 램
US7196931B2 (en) * 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors

Also Published As

Publication number Publication date
TWI352994B (enExample) 2011-11-21
US20040196695A1 (en) 2004-10-07
US7529126B2 (en) 2009-05-05
US20060239072A1 (en) 2006-10-26
JP4426868B2 (ja) 2010-03-03
US7085157B2 (en) 2006-08-01
TW200506937A (en) 2005-02-16
JP2004319065A (ja) 2004-11-11

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20040402

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid