KR20040059381A - 반도체 메모리 소자의 제조 방법 - Google Patents
반도체 메모리 소자의 제조 방법 Download PDFInfo
- Publication number
- KR20040059381A KR20040059381A KR1020020085996A KR20020085996A KR20040059381A KR 20040059381 A KR20040059381 A KR 20040059381A KR 1020020085996 A KR1020020085996 A KR 1020020085996A KR 20020085996 A KR20020085996 A KR 20020085996A KR 20040059381 A KR20040059381 A KR 20040059381A
- Authority
- KR
- South Korea
- Prior art keywords
- gate
- source
- region
- forming
- oxide layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000012535 impurity Substances 0.000 claims abstract description 10
- 238000000137 annealing Methods 0.000 claims abstract description 6
- 238000000059 patterning Methods 0.000 claims abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
Abstract
Description
Claims (4)
- 반도체 기판의 트랜지스터의 채널이 형성될 부분에 델타 도핑을 진행하는 단계;반도체 기판상에 게이트 산화막, 게이트 형성용 물질층, 캡 산화막층을 형성하고 선택적으로 패터닝하여 게이트를 형성하는 단계;전면에 포토레지스트를 도포하고 선택적으로 패터닝하여 소오스 영역이 오픈되는 포토레지스트 패턴을 형성하고 이를 마스크로 하여 노출된 반도체 기판의 소오스 영역을 일정 깊이 식각하는 단계;게이트 전극을 마스크로 저농도 불순물 이온을 주입하여 LDD 영역을 형성하고 게이트 측면에 스페이서를 형성하고 소오스/드레인 영역을 형성하는 단계;상기 소오스/드레인 영역이 형성된 결과물에 어닐링을 진행하여 소오스/드레인 및 델타 도핑된 불순물을 활성화시키는 단계를 포함하는 것을 특징으로 하는 반도체 메모리 소자의 제조 방법.
- 제 1 항에 있어서, 상기 어닐링 공정은 RTP(Rapid Thermal Process) 공정으로 진행하는 것을 특징으로 하는 반도체 메모리 소자의 제조 방법.
- 제 1 항에 있어서, 캡 산화막을 게이트 산화막보다 두꺼운 두께로 형성하여 소오스 영역 식각 공정시에 게이트 전극이 블록킹되도록 하는 것을 특징으로 하는 반도체 메모리 소자의 제조 방법.
- 제 1 항에 있어서, 포토레지스트 패턴을 마스크로 하여 노출된 반도체 기판의 소오스 영역을 델타 도핑된 깊이 이상으로 식각하는 것을 특징으로 하는 반도체 메모리 소자의 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0085996A KR100504196B1 (ko) | 2002-12-28 | 2002-12-28 | 반도체 메모리 소자의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0085996A KR100504196B1 (ko) | 2002-12-28 | 2002-12-28 | 반도체 메모리 소자의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040059381A true KR20040059381A (ko) | 2004-07-05 |
KR100504196B1 KR100504196B1 (ko) | 2005-07-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-0085996A KR100504196B1 (ko) | 2002-12-28 | 2002-12-28 | 반도체 메모리 소자의 제조 방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100504196B1 (ko) |
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2002
- 2002-12-28 KR KR10-2002-0085996A patent/KR100504196B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR100504196B1 (ko) | 2005-07-27 |
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