KR20040030511A - 신규 코폴리머 및 포토레지스트 조성물 - Google Patents
신규 코폴리머 및 포토레지스트 조성물 Download PDFInfo
- Publication number
- KR20040030511A KR20040030511A KR10-2003-7011140A KR20037011140A KR20040030511A KR 20040030511 A KR20040030511 A KR 20040030511A KR 20037011140 A KR20037011140 A KR 20037011140A KR 20040030511 A KR20040030511 A KR 20040030511A
- Authority
- KR
- South Korea
- Prior art keywords
- photoresist
- resin
- group
- photoacid
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US27140401P | 2001-02-25 | 2001-02-25 | |
| US60/271,404 | 2001-02-25 | ||
| PCT/US2002/005627 WO2002069044A2 (en) | 2001-02-25 | 2002-02-25 | Polymers and photoresist compositions |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20040030511A true KR20040030511A (ko) | 2004-04-09 |
Family
ID=23035399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2003-7011140A Ceased KR20040030511A (ko) | 2001-02-25 | 2002-02-25 | 신규 코폴리머 및 포토레지스트 조성물 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20020187420A1 (https=) |
| JP (1) | JP2004524565A (https=) |
| KR (1) | KR20040030511A (https=) |
| CN (1) | CN1310090C (https=) |
| AU (1) | AU2002255598A1 (https=) |
| TW (1) | TWI293402B (https=) |
| WO (1) | WO2002069044A2 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3890989B2 (ja) * | 2002-01-25 | 2007-03-07 | 住友化学株式会社 | レジスト組成物 |
| US7488565B2 (en) * | 2003-10-01 | 2009-02-10 | Chevron U.S.A. Inc. | Photoresist compositions comprising diamondoid derivatives |
| US7208334B2 (en) * | 2004-03-31 | 2007-04-24 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device, acid etching resistance material and copolymer |
| JP4279237B2 (ja) * | 2004-05-28 | 2009-06-17 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターン形成方法 |
| EP1662320A1 (en) * | 2004-11-24 | 2006-05-31 | Rohm and Haas Electronic Materials, L.L.C. | Photoresist compositions |
| JP5031310B2 (ja) * | 2006-01-13 | 2012-09-19 | 東京応化工業株式会社 | レジスト組成物およびレジストパターン形成方法 |
| JP5782283B2 (ja) * | 2010-03-31 | 2015-09-24 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 新規のポリマーおよびフォトレジスト組成物 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100245410B1 (ko) * | 1997-12-02 | 2000-03-02 | 윤종용 | 감광성 폴리머 및 그것을 이용한 화학증폭형 레지스트 조성물 |
| US6103445A (en) * | 1997-03-07 | 2000-08-15 | Board Of Regents, The University Of Texas System | Photoresist compositions comprising norbornene derivative polymers with acid labile groups |
| CN1190706C (zh) * | 1998-08-26 | 2005-02-23 | 住友化学工业株式会社 | 一种化学增强型正光刻胶组合物 |
| TWI263866B (en) * | 1999-01-18 | 2006-10-11 | Sumitomo Chemical Co | Chemical amplification type positive resist composition |
| JP3353292B2 (ja) * | 1999-03-29 | 2002-12-03 | 日本電気株式会社 | 化学増幅系レジスト |
| JP4061801B2 (ja) * | 2000-01-24 | 2008-03-19 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
| US6610465B2 (en) * | 2001-04-11 | 2003-08-26 | Clariant Finance (Bvi) Limited | Process for producing film forming resins for photoresist compositions |
-
2002
- 2002-02-25 TW TW091103266A patent/TWI293402B/zh active
- 2002-02-25 AU AU2002255598A patent/AU2002255598A1/en not_active Abandoned
- 2002-02-25 CN CNB028069366A patent/CN1310090C/zh not_active Expired - Fee Related
- 2002-02-25 KR KR10-2003-7011140A patent/KR20040030511A/ko not_active Ceased
- 2002-02-25 JP JP2002568102A patent/JP2004524565A/ja active Pending
- 2002-02-25 WO PCT/US2002/005627 patent/WO2002069044A2/en not_active Ceased
- 2002-02-25 US US10/082,769 patent/US20020187420A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004524565A (ja) | 2004-08-12 |
| TWI293402B (en) | 2008-02-11 |
| US20020187420A1 (en) | 2002-12-12 |
| CN1498361A (zh) | 2004-05-19 |
| AU2002255598A1 (en) | 2002-09-12 |
| WO2002069044A2 (en) | 2002-09-06 |
| WO2002069044A3 (en) | 2003-02-27 |
| CN1310090C (zh) | 2007-04-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
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| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
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| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| A201 | Request for examination | ||
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
St.27 status event code: N-2-6-B10-B15-exm-PE0601 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
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| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |