KR20040002971A - 공진기 디바이스 및 공진 주파수 조절 방법 - Google Patents

공진기 디바이스 및 공진 주파수 조절 방법 Download PDF

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Publication number
KR20040002971A
KR20040002971A KR10-2003-7014998A KR20037014998A KR20040002971A KR 20040002971 A KR20040002971 A KR 20040002971A KR 20037014998 A KR20037014998 A KR 20037014998A KR 20040002971 A KR20040002971 A KR 20040002971A
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KR
South Korea
Prior art keywords
resonator
layer
piezoelectric
detuning
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR10-2003-7014998A
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English (en)
Korean (ko)
Inventor
로버트 아이그네르
엘브레흐트 루에데르
스테판 마르크스테이네르
윈프리에드 네슬레르
Original Assignee
인피네온 테크놀로지스 아게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=7685342&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR20040002971(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 인피네온 테크놀로지스 아게 filed Critical 인피네온 테크놀로지스 아게
Publication of KR20040002971A publication Critical patent/KR20040002971A/ko
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0428—Modification of the thickness of an element of an electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
KR10-2003-7014998A 2001-05-18 2002-04-29 공진기 디바이스 및 공진 주파수 조절 방법 Abandoned KR20040002971A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10124349A DE10124349A1 (de) 2001-05-18 2001-05-18 Piezoelektrische Resonatorvorrichtung mit Verstimmungsschichtfolge
DE10124349.9 2001-05-18
PCT/EP2002/004717 WO2002095939A1 (de) 2001-05-18 2002-04-29 Piezoelektrische resonatorvorrichtung mit verstimmungsschichtfolge

Publications (1)

Publication Number Publication Date
KR20040002971A true KR20040002971A (ko) 2004-01-07

Family

ID=7685342

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7014998A Abandoned KR20040002971A (ko) 2001-05-18 2002-04-29 공진기 디바이스 및 공진 주파수 조절 방법

Country Status (6)

Country Link
US (1) US6864619B2 (enExample)
EP (1) EP1393440B1 (enExample)
JP (1) JP4455817B2 (enExample)
KR (1) KR20040002971A (enExample)
DE (2) DE10124349A1 (enExample)
WO (1) WO2002095939A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100691153B1 (ko) * 2005-03-15 2007-03-09 삼성전기주식회사 박막 벌크 음향 공진기
KR101312222B1 (ko) * 2007-08-14 2013-09-27 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 다층 전극 제조 방법, ｂａｗ 공진기 및 그 제조 방법

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DE10162580A1 (de) * 2001-12-19 2003-07-17 Infineon Technologies Ag Piezoelektrischer Schwingkreis, Verfahren zu dessen Herstellung und Filteranordnung
FR2853473B1 (fr) * 2003-04-01 2005-07-01 St Microelectronics Sa Composant electronique comprenant un resonateur et procede de fabrication
US7038355B2 (en) 2003-04-03 2006-05-02 Stmicroelectronics Sa Tunable microresonator on an insulating beam deformable by the difference in thermal expansion coefficients
JP4321754B2 (ja) * 2003-07-31 2009-08-26 Ｔｄｋ株式会社 圧電共振器およびそれを用いたフィルタ
EP1575165B1 (en) 2004-03-09 2008-05-07 Infineon Technologies AG Bulk acoustic wave filter and method for eliminating unwanted side passands
EP1730839A1 (en) * 2004-03-31 2006-12-13 Matsushita Electric Industries Co., Ltd. Acoustic mirror type thin film bulk acoustic resonator, and filter, duplexer and communication apparatus comprising the same
US20060006965A1 (en) * 2004-07-06 2006-01-12 Matsushita Electric Industrial Co., Ltd. RF filter and method for fabricating the same
WO2006018788A1 (en) * 2004-08-20 2006-02-23 Philips Intellectual Property & Standards Gmbh Narrow band bulk acoustic wave filter
US20060087039A1 (en) * 2004-10-22 2006-04-27 Taiwan Semiconductor Manufacturing Company, Ltd. Ubm structure for improving reliability and performance
DE102004054895B4 (de) 2004-11-12 2007-04-19 Infineon Technologies Ag Dünnschicht-BAW-Filter sowie Verfahren zur Herstellung eines Dünnschicht-BAW-Filters
JP4884134B2 (ja) * 2006-05-30 2012-02-29 京セラ株式会社 音響波共振子およびフィルタならびに通信装置
JP2008172494A (ja) * 2007-01-11 2008-07-24 Fujitsu Media Device Kk 圧電薄膜共振器、弾性波デバイスおよび弾性波デバイスの製造方法。
US7834720B2 (en) * 2008-07-01 2010-11-16 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic wave filter device and a method for trimming a bulk acoustic wave filter device
EP2299593A1 (en) 2009-09-18 2011-03-23 Nxp B.V. Laterally coupled bulk acoustic wave device
JP5581887B2 (ja) * 2009-12-29 2014-09-03 セイコーエプソン株式会社 振動片、振動子、発振器、電子機器、および周波数調整方法
JP2011155629A (ja) * 2009-12-29 2011-08-11 Seiko Epson Corp 振動片、振動子、発振器、電子機器、および周波数調整方法
US8610333B2 (en) 2010-09-24 2013-12-17 Wei Pang Acoustic wave devices
US9571064B2 (en) 2011-02-28 2017-02-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator device with at least one air-ring and frame
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9490771B2 (en) 2012-10-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and frame
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
US9490418B2 (en) 2011-03-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer
US9590165B2 (en) 2011-03-29 2017-03-07 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising aluminum scandium nitride and temperature compensation feature
US9484882B2 (en) 2013-02-14 2016-11-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having temperature compensation
US9401692B2 (en) 2012-10-29 2016-07-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having collar structure
US9246473B2 (en) 2011-03-29 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar, frame and perimeter distributed bragg reflector
US9571061B2 (en) 2014-06-06 2017-02-14 Akoustis, Inc. Integrated circuit configured with two or more single crystal acoustic resonator devices
US9673384B2 (en) 2014-06-06 2017-06-06 Akoustis, Inc. Resonance circuit with a single crystal capacitor dielectric material
US9537465B1 (en) 2014-06-06 2017-01-03 Akoustis, Inc. Acoustic resonator device with single crystal piezo material and capacitor on a bulk substrate
US9912314B2 (en) 2014-07-25 2018-03-06 Akoustics, Inc. Single crystal acoustic resonator and bulk acoustic wave filter
US9805966B2 (en) 2014-07-25 2017-10-31 Akoustis, Inc. Wafer scale packaging
US9716581B2 (en) 2014-07-31 2017-07-25 Akoustis, Inc. Mobile communication device configured with a single crystal piezo resonator structure
US9917568B2 (en) 2014-08-26 2018-03-13 Akoustis, Inc. Membrane substrate structure for single crystal acoustic resonator device
EP3365669B8 (en) 2015-10-21 2024-03-13 Qorvo Us, Inc. Resonator structure with enhanced reflection of shear and longitudinal modes of acoustic vibrations
KR102588798B1 (ko) * 2016-02-17 2023-10-13 삼성전기주식회사 음향파 필터 장치 및 그 제조방법
US10581398B2 (en) 2016-03-11 2020-03-03 Akoustis, Inc. Method of manufacture for single crystal acoustic resonator devices using micro-vias
US11316496B2 (en) 2016-03-11 2022-04-26 Akoustis, Inc. Method and structure for high performance resonance circuit with single crystal piezoelectric capacitor dielectric material
US10523180B2 (en) 2016-03-11 2019-12-31 Akoustis, Inc. Method and structure for single crystal acoustic resonator devices using thermal recrystallization
US11476825B2 (en) 2016-03-11 2022-10-18 Akoustis, Inc. 5.5 GHz Wi-Fi coexistence acoustic wave resonator RF filter circuit
US10979022B2 (en) 2016-03-11 2021-04-13 Akoustis, Inc. 5.2 GHz Wi-Fi acoustic wave resonator RF filter circuit
US11424728B2 (en) 2016-03-11 2022-08-23 Akoustis, Inc. Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process
US10979024B2 (en) 2016-03-11 2021-04-13 Akoustis, Inc. 5.2 GHz Wi-Fi coexistence acoustic wave resonator RF filter circuit
US11736177B2 (en) 2016-03-11 2023-08-22 Akoustis Inc. Front end modules for 5.6 GHz and 6.6 GHz Wi-Fi acoustic wave resonator RF filter circuits
US11411168B2 (en) 2017-10-16 2022-08-09 Akoustis, Inc. Methods of forming group III piezoelectric thin films via sputtering
US11177868B2 (en) 2016-03-11 2021-11-16 Akoustis, Inc. Front end module for 6.5 GHz Wi-Fi acoustic wave resonator RF filter circuit
US10355659B2 (en) 2016-03-11 2019-07-16 Akoustis, Inc. Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process
US11356071B2 (en) 2016-03-11 2022-06-07 Akoustis, Inc. Piezoelectric acoustic resonator with improved TCF manufactured with piezoelectric thin film transfer process
US10217930B1 (en) 2016-03-11 2019-02-26 Akoustis, Inc. Method of manufacture for single crystal acoustic resonator devices using micro-vias
US11451213B2 (en) 2016-03-11 2022-09-20 Akoustis, Inc. 5G n79 Wi-Fi acoustic triplexer circuit
US20210257993A1 (en) 2016-03-11 2021-08-19 Akoustis, Inc. Acoustic wave resonator rf filter circuit device
US11581866B2 (en) 2016-03-11 2023-02-14 Akoustis, Inc. RF acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer and methods of forming the same
US11558023B2 (en) 2016-03-11 2023-01-17 Akoustis, Inc. Method for fabricating an acoustic resonator device
US11418169B2 (en) 2016-03-11 2022-08-16 Akoustis, Inc. 5G n41 2.6 GHz band acoustic wave resonator RF filter circuit
US11689186B2 (en) 2016-03-11 2023-06-27 Akoustis, Inc. 5.5 GHz Wi-Fi 5G coexistence acoustic wave resonator RF filter circuit
US10979026B2 (en) 2016-03-11 2021-04-13 Akoustis, Inc. 5.5 GHz Wi-fi 5G coexistence acoustic wave resonator RF filter circuit
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Publication number Priority date Publication date Assignee Title
KR100691153B1 (ko) * 2005-03-15 2007-03-09 삼성전기주식회사 박막 벌크 음향 공진기
KR101312222B1 (ko) * 2007-08-14 2013-09-27 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 다층 전극 제조 방법, ｂａｗ 공진기 및 그 제조 방법

Also Published As

Publication number Publication date
US6864619B2 (en) 2005-03-08
US20040130847A1 (en) 2004-07-08
JP4455817B2 (ja) 2010-04-21
EP1393440A1 (de) 2004-03-03
EP1393440B1 (de) 2009-06-24
JP2004534445A (ja) 2004-11-11
DE10124349A1 (de) 2002-12-05
DE50213637D1 (de) 2009-08-06
WO2002095939A1 (de) 2002-11-28

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Patent event date: 20031118

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20031118

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