KR20030080600A - CVD 반응 장치용 다공 SiC 가이드 링 및 그 제조방법 - Google Patents
CVD 반응 장치용 다공 SiC 가이드 링 및 그 제조방법 Download PDFInfo
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- KR20030080600A KR20030080600A KR1020020019313A KR20020019313A KR20030080600A KR 20030080600 A KR20030080600 A KR 20030080600A KR 1020020019313 A KR1020020019313 A KR 1020020019313A KR 20020019313 A KR20020019313 A KR 20020019313A KR 20030080600 A KR20030080600 A KR 20030080600A
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- South Korea
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- guide ring
- porous sic
- porous
- wafer
- sic guide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (4)
- 웨이퍼(7)를 향해 반응 가스를 분출시키는 분산 헤드(11);상기 분산 헤드(11)의 상부에 위치한 다공 가이드(9);상기 다공 가이드(9)의 하단에 부착되어 상기 웨이퍼(7)를 안착시킬 수 있도록 구멍(5)이 천공되어 있고, 상기 웨이퍼(7)의 두께보다 얇은 두께를 가지는 가이드 링(1)을 포함하는 CVD 반응 장치에 있어서,상기 가이드 링(1)은 상기 반응 가스와 상기 가이드 링(1)이 반응하여 생성된 부산물을 흡수하기 위한 다공성 SiC 가이드 링(1)인 것을 특징으로 하는 CVD 반응 장치용 다공 SiC 가이드 링.
- 제 1 항에 있어서, 상기 다공 SiC 가이드 링(1)의 기공율은 15 ~20 %인 것을 특징으로 하는 CVD 반응 장치.
- 다공 SiC 가이드 링(1) 두께를 가공할 웨이퍼(7)의 두께보다 얇고 상면이 평탄하도록 평면 연삭을 하는 단계(S10);상기 다공 SiC 가이드 링(1)의 외곽 치수를 지정된 치수로 가공 하는 단계(S20);상기 다공 SiC 가이드 링(1)의 내경을 경사지게 테이퍼 가공을 하는 단계(S30);상기 다공 SiC 가이드 링(1)을 600 ~ 800 ℃에서 0.5 ~ 2 시간 동안 열처리하여 불순물을 제거하는 단계(S40);상기 다공 SiC 가이드 링(1)의 표면을 산으로 세정하여, 상기 다공 SiC 가이드 링(1)의 표면의 금속 성분을 제거하는 1 차 세정 단계(S60);상기 다공 SiC 가이드 링(1)을 초음파를 통해 5 ~ 15 분 동안 세정을 하는 2 차 세정 단계(S70)를 포함하는 것을 특징으로 하는 다공 SiC 가이드 링의 제조 방법.
- 제 3 항에 있어서, 상기 테이퍼 가공의 구배는 40 ~ 45°인 것을 특징으로 하는 다공 SiC 가이드 링의 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR10-2002-0019313A KR100454122B1 (ko) | 2002-04-09 | 2002-04-09 | CVD 반응 장치용 다공 SiC 가이드 링의 제조방법 |
Applications Claiming Priority (1)
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KR10-2002-0019313A KR100454122B1 (ko) | 2002-04-09 | 2002-04-09 | CVD 반응 장치용 다공 SiC 가이드 링의 제조방법 |
Publications (2)
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KR20030080600A true KR20030080600A (ko) | 2003-10-17 |
KR100454122B1 KR100454122B1 (ko) | 2004-10-26 |
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KR10-2002-0019313A KR100454122B1 (ko) | 2002-04-09 | 2002-04-09 | CVD 반응 장치용 다공 SiC 가이드 링의 제조방법 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100955639B1 (ko) * | 2006-11-22 | 2010-05-06 | 실트로닉 아게 | 에피택셜 코팅된 반도체 웨이퍼 및 에피택셜 코팅된 반도체웨이퍼 제조 방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5584936A (en) * | 1995-12-14 | 1996-12-17 | Cvd, Incorporated | Susceptor for semiconductor wafer processing |
JPH1083968A (ja) * | 1996-09-06 | 1998-03-31 | Toshiba Corp | 半導体製造装置 |
JPH11121435A (ja) * | 1997-10-08 | 1999-04-30 | Fujitsu Ltd | 基板処理装置及び基板処理方法 |
KR20010092914A (ko) * | 2000-03-27 | 2001-10-27 | 윤종용 | 섀도우 링을 구비하는 정전척 |
US6890861B1 (en) * | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
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2002
- 2002-04-09 KR KR10-2002-0019313A patent/KR100454122B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100955639B1 (ko) * | 2006-11-22 | 2010-05-06 | 실트로닉 아게 | 에피택셜 코팅된 반도체 웨이퍼 및 에피택셜 코팅된 반도체웨이퍼 제조 방법 |
US7838398B2 (en) | 2006-11-22 | 2010-11-23 | Siltronic Ag | Epitaxially coated semiconductor wafer and device and method for producing an epitaxially coated semiconductor wafer |
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