KR20030063186A - 데이터 비트 기록 방법 및 회로 - Google Patents

데이터 비트 기록 방법 및 회로 Download PDF

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Publication number
KR20030063186A
KR20030063186A KR10-2003-0003298A KR20030003298A KR20030063186A KR 20030063186 A KR20030063186 A KR 20030063186A KR 20030003298 A KR20030003298 A KR 20030003298A KR 20030063186 A KR20030063186 A KR 20030063186A
Authority
KR
South Korea
Prior art keywords
coupled
addressed
data bits
memory array
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR10-2003-0003298A
Other languages
English (en)
Korean (ko)
Inventor
피셔마이클크리스천
Original Assignee
휴렛-팩커드 컴퍼니(델라웨어주법인)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 휴렛-팩커드 컴퍼니(델라웨어주법인) filed Critical 휴렛-팩커드 컴퍼니(델라웨어주법인)
Publication of KR20030063186A publication Critical patent/KR20030063186A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1084—Data input buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits

Landscapes

  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
KR10-2003-0003298A 2002-01-18 2003-01-17 데이터 비트 기록 방법 및 회로 Withdrawn KR20030063186A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/053,995 2002-01-18
US10/053,995 US6687168B2 (en) 2002-01-18 2002-01-18 Method for writing data bits to a memory array

Publications (1)

Publication Number Publication Date
KR20030063186A true KR20030063186A (ko) 2003-07-28

Family

ID=21987996

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-0003298A Withdrawn KR20030063186A (ko) 2002-01-18 2003-01-17 데이터 비트 기록 방법 및 회로

Country Status (6)

Country Link
US (2) US6687168B2 (enExample)
EP (1) EP1329902A1 (enExample)
JP (1) JP2003228989A (enExample)
KR (1) KR20030063186A (enExample)
CN (1) CN1433019A (enExample)
TW (1) TWI266333B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6856627B2 (en) * 1999-01-15 2005-02-15 Cisco Technology, Inc. Method for routing information over a network
US6687168B2 (en) * 2002-01-18 2004-02-03 Hewlett-Packard Development Company, L.P. Method for writing data bits to a memory array
US7800932B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Memory cell comprising switchable semiconductor memory element with trimmable resistance
US7106639B2 (en) * 2004-09-01 2006-09-12 Hewlett-Packard Development Company, L.P. Defect management enabled PIRM and method
US7450414B2 (en) * 2006-07-31 2008-11-11 Sandisk 3D Llc Method for using a mixed-use memory array
US20080025069A1 (en) * 2006-07-31 2008-01-31 Scheuerlein Roy E Mixed-use memory array with different data states
US7486537B2 (en) * 2006-07-31 2009-02-03 Sandisk 3D Llc Method for using a mixed-use memory array with different data states
TWI426384B (zh) * 2009-09-10 2014-02-11 Robustflash Technologies Ltd 資料寫入方法與系統

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173873A (en) 1990-06-28 1992-12-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High speed magneto-resistive random access memory
FR2713398B1 (fr) 1993-11-30 1996-01-19 Sgs Thomson Microelectronics Fusible pour circuit intégré.
JP3560266B2 (ja) * 1995-08-31 2004-09-02 株式会社ルネサステクノロジ 半導体装置及び半導体データ装置
US5748519A (en) 1996-12-13 1998-05-05 Motorola, Inc. Method of selecting a memory cell in a magnetic random access memory device
WO2000026920A1 (fr) * 1998-10-29 2000-05-11 Hitachi, Ltd. Dispositif de circuit integre semi-conducteur
JP3800925B2 (ja) 2000-05-15 2006-07-26 日本電気株式会社 磁気ランダムアクセスメモリ回路
DE60111953T2 (de) * 2000-10-30 2006-04-20 Whiteley, Bruce Alan Fluidmischer mit drehbarem auslassrohr und dosieröffnungen
US6687168B2 (en) * 2002-01-18 2004-02-03 Hewlett-Packard Development Company, L.P. Method for writing data bits to a memory array
JP3808802B2 (ja) * 2002-06-20 2006-08-16 株式会社東芝 磁気ランダムアクセスメモリ

Also Published As

Publication number Publication date
JP2003228989A (ja) 2003-08-15
US20030137891A1 (en) 2003-07-24
CN1433019A (zh) 2003-07-30
US6856570B2 (en) 2005-02-15
TWI266333B (en) 2006-11-11
US6687168B2 (en) 2004-02-03
EP1329902A1 (en) 2003-07-23
US20040218412A1 (en) 2004-11-04
TW200302488A (en) 2003-08-01

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20030117

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid