KR20030058840A - Stack chip package - Google Patents
Stack chip package Download PDFInfo
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- KR20030058840A KR20030058840A KR1020020000065A KR20020000065A KR20030058840A KR 20030058840 A KR20030058840 A KR 20030058840A KR 1020020000065 A KR1020020000065 A KR 1020020000065A KR 20020000065 A KR20020000065 A KR 20020000065A KR 20030058840 A KR20030058840 A KR 20030058840A
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- Prior art keywords
- semiconductor chip
- chip
- bonding
- bump
- wire
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- 239000004065 semiconductor Substances 0.000 claims abstract description 96
- 230000002787 reinforcement Effects 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000004593 Epoxy Substances 0.000 claims abstract description 6
- 229920005989 resin Polymers 0.000 claims abstract description 6
- 239000011347 resin Substances 0.000 claims abstract description 6
- 238000003780 insertion Methods 0.000 claims description 8
- 230000037431 insertion Effects 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 8
- 238000005538 encapsulation Methods 0.000 abstract description 5
- 230000002159 abnormal effect Effects 0.000 abstract description 4
- 238000000465 moulding Methods 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000035939 shock Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000008358 core component Substances 0.000 description 1
- 229920006336 epoxy molding compound Polymers 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
본 발명은 복수의 반도체 칩이 내재되어 단위 반도체 칩 패키지로 구현되는 적층 칩 패키지로서, 하위 반도체 칩에 범프간의 접합에 의해 플립 칩 본딩되며 그 반도체 칩에 대하여 미러(mirror)형 구조를 갖는 상위 반도체 칩을 포함하며 최하위 반도체 칩이 본딩와이어에 의해 기판에 와이어 본딩된 적층 칩 패키지에 있어서, 상기 상위 반도체 칩과 하위 반도체 칩 사이에 사이 보강물이 개재되어 있는 것을 특징으로 한다. 이에 따르면, 칩 적층 및 와이어본딩 과정에서 가해지는 기계적 충격을 분산 및 완화시켜 범프 또는 본딩와이어의 변형을 방지할 수 있다. 그리고, 본딩와이어 또는 범프의 쿠션 작용에 의한 비정상적인 작업의 진행이 방지될 수 있다. 더욱이, 삽입 보강물은 봉지부 형성시 에폭시 성형 수지의 미충전으로 인한 보이드의 발생이 방지될 수 있다.The present invention provides a multilayer chip package in which a plurality of semiconductor chips are inherently implemented as a unit semiconductor chip package, and are flip chip bonded by bonding between bumps to a lower semiconductor chip, and an upper semiconductor having a mirror structure with respect to the semiconductor chip. A laminated chip package including a chip and wire-bonded to a substrate by a bonding wire, wherein the reinforcement is interposed between the upper semiconductor chip and the lower semiconductor chip. According to this, the mechanical impact applied during the chip stacking and wire bonding process may be dispersed and mitigated to prevent deformation of the bump or the bonding wire. In addition, the progress of abnormal work due to the cushioning action of the bonding wire or the bump can be prevented. Moreover, the insert reinforcement can prevent the generation of voids due to the unfilled epoxy molding resin when forming the encapsulation.
Description
본 발명은 반도체 장치에 관한 것으로서, 더욱 상세하게는 복수의 반도체 칩이 내재되어 단위 반도체 칩 패키지로 구현되는 적층 칩 패키지에 관한 것이다.The present invention relates to a semiconductor device, and more particularly, to a multilayer chip package in which a plurality of semiconductor chips are embedded and implemented as a unit semiconductor chip package.
최근 반도체 산업의 발전과 사용자의 요구에 따라 전자기기는 더욱 더 소형화 및 경량화 되고 있으며 전자기기의 핵심 부품인 패키지 또한 소형화 및 경량화되고 있다. 이와 같은 추세에 따라 개발된 형태의 패키지 형태로서 복수의 반도체 칩을 수직으로 적층하여 포함하여 하나의 단위 반도체 칩 패키지로 구현된 적층 칩 패키지가 알려져 있다. 이와 같은 적층 칩 패키지는 하나의 반도체 칩을 내재하는 단위 반도체 칩 패키지 복수 개를 이용하는 것보다 크기나 무게 및 실장면적에서 소형화와 경량화에 유리하다. 적층 패키지의 일 예를 소개하기로 한다.Recently, according to the development of the semiconductor industry and the needs of users, electronic devices are becoming smaller and lighter, and packages, which are core components of the electronic device, are also becoming smaller and lighter. As a package type developed according to such a trend, a multilayer chip package including a plurality of semiconductor chips stacked vertically and implemented as one unit semiconductor chip package is known. Such a laminated chip package is advantageous in size and weight in terms of size, weight, and mounting area, rather than using a plurality of unit semiconductor chip packages containing one semiconductor chip. An example of a laminated package will be introduced.
도 1은 종래 기술에 따른 적층 칩 패키지를 나타낸 단면도이다.1 is a cross-sectional view showing a stacked chip package according to the prior art.
도 1을 참조하면, 종래 적층 칩 패키지(110)는 테이프 배선 기판(131) 위에 범프(121)가 형성된 활성면이 위를 향하도록 하여 제 1반도체 칩(111)이 실장된다. 제 1반도체 칩(111)의 범프(121)와 테이프 배선 기판(131)의 접합패드(133)가 리버스 와이어 본딩(reverse wire bonding), 즉 본딩와이어(141)가 테이프 배선 기판(131) 쪽에서 볼 본딩(ball bonding)이 그리고 범프(121) 쪽에 스티치 본딩(stitch bonding)이 이루어지는 와이어 본딩에 의하여 전기적으로 연결된다.Referring to FIG. 1, in the conventional stacked chip package 110, a first semiconductor chip 111 is mounted with an active surface on which a bump 121 is formed on a tape wiring board 131 faces upward. The bump 121 of the first semiconductor chip 111 and the bonding pad 133 of the tape wiring board 131 are reverse wire bonding, that is, the bonding wire 141 is viewed from the tape wiring board 131 side. Ball bonding is then electrically connected by wire bonding with stitch bonding on the bump 121 side.
그리고, 제 1반도체 칩(111)의 상부에 제 2반도체 칩(113)이 실장된다. 제 2반도체 칩(113)의 활성면에 형성된 범프(123)가 제 1반도체 칩(111)의 범프(121)와 접합되는 범프간의 접합에 의해 실장된다. 이때, 제 2반도체 칩(113)의 범프(123)는 본딩와이어(141) 부분과도 접합되어 전기적으로 연결된다. 여기서, 제 2반도체 칩(113)은 제 1반도체 칩(111)과 패드 배치가 대칭인 미러 칩(mirror chip) 구조를 가진다.The second semiconductor chip 113 is mounted on the first semiconductor chip 111. A bump 123 formed on the active surface of the second semiconductor chip 113 is mounted by bonding between bumps joined to the bump 121 of the first semiconductor chip 111. In this case, the bumps 123 of the second semiconductor chip 113 are also electrically connected to the bonding wires 141. Here, the second semiconductor chip 113 has a mirror chip structure in which the pad arrangement of the first semiconductor chip 111 is symmetrical.
제 2반도체 칩(113)의 상부에는 제 3반도체 칩(115)이 부착된다. 제 2반도체칩(113)의 배면, 즉 범프(123)가 형성된 반대면에 절연 접착제(163)로 제 3반도체 칩(115)이 부착되어 제 3반도체 칩(115)의 범프(125)는 위를 향한다. 제 3반도체 칩(115)의 범프(125)와 테이프 배선 기판(131)의 접합패드(133)가 본딩와이어(143)에 연결되며 역시 리버스 와이어 본딩에 의한다.The third semiconductor chip 115 is attached to the upper portion of the second semiconductor chip 113. The third semiconductor chip 115 is attached to the back surface of the second semiconductor chip 113, that is, the opposite surface on which the bumps 123 are formed, and the bumps 125 of the third semiconductor chip 115 are attached to the third semiconductor chip 115. Heads up. The bumps 125 of the third semiconductor chip 115 and the bonding pads 133 of the tape wiring board 131 are connected to the bonding wires 143 and are also reverse wire bonding.
그런데, 전술한 종래 기술에 따른 적층 칩 패키지의 경우 칩 적층 과정에서 가해지는 물리적인 힘에 의하여 제 1반도체 칩과 제 2반도체 칩의 사이에 위치하는 본딩와이어 또는 범프가 변형될 수 있으며, 본딩와이어 또는 범프의 쿠션(cushion) 작용에 의하여 본딩 파라미터(bonding parameter)들이 제대로 전달되지 않아 정상적인 작업이 어려운 문제점이 있다.However, in the above-described stacked chip package according to the related art, the bonding wire or the bump positioned between the first semiconductor chip and the second semiconductor chip may be deformed by the physical force applied during the chip stacking process. Alternatively, the bonding parameters are not properly transmitted by the cushioning action of the bumps, so that normal operation is difficult.
본 발명의 목적은 본딩와이어 또는 범프의 변형 방지 및 본딩와이어 또는 범프의 쿠션 작용에 의한 비정상적인 작업 진행을 방지할 수 있는 적층 칩 패키지를 제공하는 데 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide a laminated chip package capable of preventing deformation of bonding wires or bumps and abnormal operation progress due to cushioning of the bonding wires or bumps.
도 1은 종래 기술에 따른 적층 칩 패키지를 나타낸 단면도,1 is a cross-sectional view showing a laminated chip package according to the prior art,
도 2는 본 발명에 따른 적층 칩 패키지의 실시예를 나타낸 단면도,2 is a cross-sectional view showing an embodiment of a stacked chip package according to the present invention;
도 3a 내지 도 3f는 본 발명에 따른 적층 칩 패키지 제조 공정을 나타낸 단면도이다.3A to 3F are cross-sectional views illustrating a process of manufacturing a stacked chip package according to the present invention.
* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
10; 적층 칩 패키지11; 제 1반도체 칩10; Stacked chip package 11; First semiconductor chip
13; 제 2반도체 칩15; 제 3반도체 칩13; Second semiconductor chip 15; Third semiconductor chip
21,23,25; 범프(bump)31; 기판21,23,25; Bump 31; Board
41,45; 본딩와이어51; 삽입 보강물41,45; Bonding wire 51; Insert reinforcement
61; 절연 접착제61; Insulation adhesive
이와 같은 목적을 달성하기 위한 본 발명에 따른 적층 칩 패키지는, 하위 반도체 칩에 범프간의 접합에 의해 플립 칩 본딩(flip chip bonding)되며 그 반도체 칩에 대하여 미러형 구조를 갖는 상위 반도체 칩을 포함하며 최하위 반도체 칩이 본딩와이어에 의해 기판에 와이어 본딩된 적층 칩 패키지에 있어서, 상위 반도체 칩과 하위 반도체 칩 사이에 충격 완화용 보강물이 개재되어 있는 것을 특징으로 한다.The stacked chip package according to the present invention for achieving the above object, the flip chip bonding by the bump-to-bump bonding to the lower semiconductor chip includes an upper semiconductor chip having a mirror-type structure for the semiconductor chip A laminated chip package in which a lowermost semiconductor chip is wire-bonded to a substrate by a bonding wire, characterized in that a shock absorbing reinforcement is interposed between the upper semiconductor chip and the lower semiconductor chip.
이하 첨부 도면을 참조하여 본 발명에 따른 적층 칩 패키지를 보다 상세하게 설명하고자 한다.Hereinafter, a multilayer chip package according to the present invention will be described in detail with reference to the accompanying drawings.
도 2는 본 발명에 따른 적층 칩 패키지의 실시예를 나타낸 단면도이다.2 is a cross-sectional view showing an embodiment of a stacked chip package according to the present invention.
도 2를 참조하면, 본 발명에 따른 적층 칩 패키지(10)는 기판(31)위에 3개의 반도체 칩(11,13,15)이 수직으로 적층된 형태이다. 여기서, 기판(31)으로는 테이프 배선 기판이나 인쇄회로기판이 채택될 수 있다. 기판(31)에 실장된 제 1반도체 칩(11)은 활성면에 범프(21)가 형성되어 있으며 활성면이 위를 향하도록 접착제(61)로 실장되어 있다. 제 1반도체 칩(11)의 범프(21)와 기판(31)이 리버스 와이어 본딩에 의해 본딩와이어(41)로 전기적으로 연결되어 있다.Referring to FIG. 2, the stacked chip package 10 according to the present invention has three semiconductor chips 11, 13, and 15 stacked vertically on the substrate 31. Here, the tape 31 may be a tape wiring board or a printed circuit board. The first semiconductor chip 11 mounted on the substrate 31 has a bump 21 formed on an active surface and is mounted with an adhesive 61 so that the active surface faces upward. The bump 21 and the substrate 31 of the first semiconductor chip 11 are electrically connected to the bonding wire 41 by reverse wire bonding.
제 1반도체 칩(11)의 상부에는 삽입 보강물(51)을 개재하여 제 2반도체 칩(13)이 플립 칩 본딩 형태로 범프간의 접합에 의해 제 2반도체 칩(13)이 실장되어 있다. 여기서, 제 2반도체 칩(13)은 제 1반도체 칩(11)의 미러 칩이다. 그리고, 삽입 보강물(51)로는 절연성으로서 글라스(glass) 계통 또는 에폭시 성형 수지(epoxy molding compound) 계통의 고형물을 사용하여 열에 의한 이종 물질간의 팽창 계수차이에 의해 발생되는 문제점이 발생되지 않도록 한다.On the upper portion of the first semiconductor chip 11, the second semiconductor chip 13 is mounted by bonding the bumps in the form of flip chip bonding with the second semiconductor chip 13 via the insertion reinforcement 51. Here, the second semiconductor chip 13 is a mirror chip of the first semiconductor chip 11. In addition, as the insert reinforcement 51, a glass-based or epoxy molding compound-based solid material is used as the insulation so that the problem caused by the expansion coefficient difference between heat dissimilar materials does not occur.
제 2반도체 칩(13)의 상부에는 제 3반도체 칩(15)이 절연 접착제(63)에 의해 실장되어 있으며 범프(25)가 형성된 활성면이 위를 향하도록 형성되어 있다. 제 3반도체 칩(15)의 범프(25)는 기판(31)과 리버스 와이어 본딩되어 전기적으로 연결되고 있다.The third semiconductor chip 15 is mounted on the upper portion of the second semiconductor chip 13 by the insulating adhesive 63, and the active surface on which the bumps 25 are formed faces upward. The bump 25 of the third semiconductor chip 15 is reversely wire-bonded with the substrate 31 and electrically connected thereto.
각각의 반도체 칩들(11,13,15)과 본딩와이어(41,43)를 포함하여 기판(31)의상부에 에폭시 성형 수지로 봉지부(71)가 형성되어 외부로부터 물리적 및 화학적으로 보호되어 패키지 동작에 대한 신뢰성이 확보된다. 기판(31)의 저면에는 외부접속단자로서 솔더 볼(81)이 부착되어 반도체 칩들(11,13,15)과 전기적으로 연결된다.The encapsulation portion 71 is formed of an epoxy molding resin on the substrate 31 including the semiconductor chips 11, 13, and 15 and the bonding wires 41 and 43, respectively, to physically and chemically protect the package from the outside. The reliability of the operation is secured. A solder ball 81 is attached to the bottom of the substrate 31 as an external connection terminal and electrically connected to the semiconductor chips 11, 13, and 15.
위의 실시예에서와 같이 본 발명에 따른 적층 칩 패키지는 활성면이 마주보는 반도체 칩들 사이에 삽입 보강물이 개재되어 칩 적층 과정에서 본딩와이어와 범프에 가해지는 기계적 충격을 분산 및 완화시켜 그로 인한 본딩와이어 및 범프의 변형을 방지한다. 또한, 본딩와이어 또는 범프의 쿠션 작용에 의한 비정상적인 작업의 진행을 방지할 수 있다. 더욱이 삽입 보강물은 봉지부 형성시 에폭시 성형 수지의 미충전으로 인한 보이드의 발생을 방지한다.As in the above embodiment, the stacked chip package according to the present invention has an insertion reinforcement interposed between semiconductor chips facing the active surface to disperse and mitigate mechanical shocks applied to the bonding wires and bumps during chip stacking. Prevents deformation of bonding wires and bumps. In addition, it is possible to prevent the progress of abnormal work by the cushioning action of the bonding wire or bump. Moreover, the insert reinforcement prevents the generation of voids due to the unfilled epoxy molding resin in forming the encapsulation.
이와 같은 본 발명에 따른 적층 칩 패키지의 제조 과정을 살펴보기로 한다.The manufacturing process of the stacked chip package according to the present invention will be described.
도 3a내지 도 3f는 본 발명에 따른 적층 칩 패키지 제조 공정을 나타낸 단면도이다.3A to 3F are cross-sectional views illustrating a process of manufacturing a stacked chip package according to the present invention.
먼저 도 3a와 같이 기판(31)에 접착제를 도포하고 제 1반도체 칩(11)을 부착시키고, 도 3b와 같이 제 1반도체 칩(11)에 범프(21)를 형성한다. 그리고, 도 3c와 같이 제 1반도체 칩(11)의 범프(21)에 리버스 와이어본딩을 시킨다. 기판(31)의 접합패드(33)에 볼 본딩을 하고 제 1반도체 칩(11)의 범프(21)에 스티치 본딩을 진행한다.First, an adhesive is applied to the substrate 31 as shown in FIG. 3A, the first semiconductor chip 11 is attached, and bumps 21 are formed on the first semiconductor chip 11 as shown in FIG. 3B. As shown in FIG. 3C, the bump 21 of the first semiconductor chip 11 is subjected to reverse wire bonding. Ball bonding is performed on the bonding pads 33 of the substrate 31 and stitch bonding is performed on the bumps 21 of the first semiconductor chip 11.
제 1반도체 칩(11)의 실장과 와이어 본딩이 완료되면, 도 3d와 같이 제 1반도체 칩(11)의 활성면에 삽입 보강물(51)을 부착시킨다. 활성면에서 범프(21)의 내측에 일정 두께의 삽입 보강물(51)을 부착시킨다. 삽입 보강물(51)의 두께는 제 1반도체 칩(11) 상부에 실장되는 반도체 칩의 범프 높이와 본딩와이어 두께 등을 고려하여 설정된다. 삽입 보강물(51)로는 절연성의 글라스 계통 또는 에폭시 성형 수지 계통의 고형물을 이용한다.When mounting and wire bonding of the first semiconductor chip 11 are completed, the insertion reinforcement 51 is attached to the active surface of the first semiconductor chip 11 as shown in FIG. 3D. The insertion reinforcement 51 of a predetermined thickness is attached to the inside of the bump 21 at the active surface. The thickness of the insertion reinforcement 51 is set in consideration of the bump height, the bonding wire thickness, and the like of the semiconductor chip mounted on the first semiconductor chip 11. As the insert reinforcement 51, an insulating glass-based or epoxy-based resin-based solid is used.
삽입 보강물(51)의 부착이 완료되면, 도 3e와 같이 제 2반도체 칩(13)을 범프간 접합에 의하여 실장시킨다. 범프(23)가 형성된 제 2반도체 칩(13)을 플립 칩 본딩 형태로 제 1반도체 칩(11)에 실장한다. 제 2반도체 칩(13)의 범프(23)를 본딩와이어(41)가 부착된 제 1반도체 칩(11)의 범프(21)에 부착시킨다. 제 2반도체 칩(13)의 실장시 가해지는 기계적인 충격은 삽입 보강물(51)에 의해 분산 및 완화된다.When the insertion reinforcement 51 is attached, the second semiconductor chip 13 is mounted by the bump-to-bump as shown in FIG. 3E. The second semiconductor chip 13 having the bumps 23 formed thereon is mounted on the first semiconductor chip 11 in the form of flip chip bonding. The bump 23 of the second semiconductor chip 13 is attached to the bump 21 of the first semiconductor chip 11 to which the bonding wire 41 is attached. Mechanical shock applied during mounting of the second semiconductor chip 13 is dispersed and mitigated by the insert reinforcement 51.
제 2반도체 칩(13)의 실장이 완료되면, 도 3f와 같이 제 2반도체 칩(13)의 상부에 범프(23)가 형성된 제 3반도체 칩(15)을 실장한다. 제 3반도체 칩(15)은 범프(25)가 형성된 면이 위를 향하도록 제 2반도체 칩(13)의 배면에 제 3반도체 칩(15)의 배면을 절연성 접착제(63)를 이용하여 부착시킨다. 그리고, 제 3반도체 칩(15)의 범프(25)와 기판(31)의 접합패드(33)를 리버스 와이어본딩시킨다. 제 3반도체 칩(15)의 부착과 그 제 3반도체 칩(15)의 범프(25)와 기판(31)의 접합패드(33)간의 와이어본딩 과정에서 가해지는 물리적인 충격이 삽입 보강물(51)에 의해 분산 및 완화된다. 후속으로 봉지 공정과 솔더 볼 부착 공정 등을 진행하여 패키지가 완성된다.When the mounting of the second semiconductor chip 13 is completed, the third semiconductor chip 15 having the bumps 23 formed on the second semiconductor chip 13 is mounted as shown in FIG. 3F. The third semiconductor chip 15 attaches the back surface of the third semiconductor chip 15 to the rear surface of the second semiconductor chip 13 using the insulating adhesive 63 so that the surface on which the bumps 25 are formed is facing up. . The bump 25 of the third semiconductor chip 15 and the bonding pad 33 of the substrate 31 are reverse wire bonded. The physical shock applied during the attachment of the third semiconductor chip 15 and the wire bonding process between the bump 25 of the third semiconductor chip 15 and the bonding pad 33 of the substrate 31 is applied to the insertion reinforcement 51. Are dispersed and mitigated by Subsequently, the package is completed by the encapsulation process and the solder ball attaching process.
전술한 본 발명의 적층 칩 패키지 실시예에서 3개의 반도체 칩이 적층된 것을 소개하였다. 그러나, 본 발명의 적층 칩 패키지는 이에 한정되지 않고 2개 이상의 반도체 칩을 포함하는 여러 형태로 변형 실시가 가능하다.In the above-described stacked chip package embodiment of the present invention, three semiconductor chips are stacked. However, the multilayer chip package of the present invention is not limited thereto, and may be modified in various forms including two or more semiconductor chips.
이상과 같은 본 발명에 의한 적층 칩 패키지에 따르면, 칩 적층 및 와이어본딩 과정에서 가해지는 물리적인 충격을 분산 및 완화시켜 범프 또는 본딩와이어의 변형을 방지할 수 있다. 그리고, 본딩와이어 또는 범프의 쿠션 작용에 의한 비정상적인 작업의 진행이 방지될 수 있다. 더욱이, 삽입 보강물은 봉지부 형성시 에폭시 성형 수지의 미충전으로 인한 보이드의 발생이 방지될 수 있다.According to the multilayer chip package according to the present invention as described above, it is possible to prevent the deformation of the bump or bonding wire by dispersing and mitigating the physical impact applied during the chip stacking and wire bonding process. In addition, the progress of abnormal work due to the cushioning action of the bonding wire or the bump can be prevented. Moreover, the insert reinforcement can prevent the generation of voids due to the unfilled epoxy molding resin when forming the encapsulation.
Claims (4)
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030095035A (en) * | 2002-06-11 | 2003-12-18 | 주식회사 칩팩코리아 | Chip size stack package using resin-spacer |
KR100577015B1 (en) * | 2003-07-29 | 2006-05-10 | 매그나칩 반도체 유한회사 | Stacked chip package of semiconductor device and manufacturing method thereof |
KR100714917B1 (en) * | 2005-10-28 | 2007-05-04 | 삼성전자주식회사 | Chip stack structure with shield plate and system package |
-
2002
- 2002-01-02 KR KR1020020000065A patent/KR20030058840A/en not_active Application Discontinuation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030095035A (en) * | 2002-06-11 | 2003-12-18 | 주식회사 칩팩코리아 | Chip size stack package using resin-spacer |
KR100577015B1 (en) * | 2003-07-29 | 2006-05-10 | 매그나칩 반도체 유한회사 | Stacked chip package of semiconductor device and manufacturing method thereof |
KR100714917B1 (en) * | 2005-10-28 | 2007-05-04 | 삼성전자주식회사 | Chip stack structure with shield plate and system package |
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