KR20030029023A - 자기 터널 접합의 스위칭 자기장 특성을 변형시키는 방법 - Google Patents
자기 터널 접합의 스위칭 자기장 특성을 변형시키는 방법 Download PDFInfo
- Publication number
- KR20030029023A KR20030029023A KR1020020060055A KR20020060055A KR20030029023A KR 20030029023 A KR20030029023 A KR 20030029023A KR 1020020060055 A KR1020020060055 A KR 1020020060055A KR 20020060055 A KR20020060055 A KR 20020060055A KR 20030029023 A KR20030029023 A KR 20030029023A
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- South Korea
- Prior art keywords
- layer
- magnetization vector
- magnetic field
- junction
- way
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/902—FET with metal source region
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (10)
- 고정형층과 감지층(pinned and sense layer)(206,210)을 포함하는 자기 터널 접합(magnetic tunnel junction)을 형성하는 단계와,상기 층들 중 적어도 하나의 자화 벡터(magnetization vector)를 재설정(re-setting)하는 단계를 포함하는방법.
- 제 1 항에 있어서,상기 접합을 어닐링(annealing) 할때 관심있는 방향(derection of interest)으로 자기장을 인가함으로써 자화 벡터가 재설정되는방법.
- 제 1 항에 있어서,상기 고정형층에 대하여 관심있는 방향으로 자기장을 인가할 때 상기 고정형층의 차단 온도(blocking temperature) 이상의 온도로 어닐링 함으로써 상기 고정형층의 자화 벡터가 재설정되는방법.
- 제 1 항에 있어서,상기 감지층에 대하여 관심있는 방향으로 자기장을 인가할 때, 상기 감지층의 자화 용이축 회전(easy axis rotation)을 위한 임계 온도 이상으로 상기 접합을 가열함으로써 상기 감지층의 자화 각도가 재설정되는방법.
- 제 1 항에 있어서,상기 접합의 상기 스위칭 특성을 테스트하는 단계(220)와, 상기 테스트 결과에 따라서 적어도 하나의 자화 벡터를 재설정하는 단계(220)를 더 포함하는방법.
- 제 1 항에 있어서,상기 감지층 자화 벡터와 상기 고정형층 자화 벡터는 재어닐링에 의하여 재설정되는방법.
- 제 1 항에 있어서,강한 강자성 결합(ferromagnetic coupling)과 약한 반강자성 결합(antiferromagnetic coupling)을 보상하기 위해 상기 고정형층의 자화 벡터를 재설정하는방법.
- 제 1 항에 있어서,스위칭 커브 대칭성(switching curve symmetry)을 개선하도록 적어도 하나의 자화 벡터를 재설정하는방법.
- 제 1 항에 있어서,임계 스위칭 자기장(critical switching field)을 축소하기 위해 적어도 하나의 자화 벡터를 재설정하는방법.
- 제 1 항에 있어서,적어도 하나의 자화 벡터가 동일한 방향을 향하도록 재설정되는방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/971,347 US6649423B2 (en) | 2001-10-04 | 2001-10-04 | Method for modifying switching field characteristics of magnetic tunnel junctions |
US09/971,347 | 2001-10-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030029023A true KR20030029023A (ko) | 2003-04-11 |
KR100923772B1 KR100923772B1 (ko) | 2009-10-27 |
Family
ID=25518254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020060055A KR100923772B1 (ko) | 2001-10-04 | 2002-10-02 | 자기 터널 접합의 스위칭 자기장 특성을 변형시키는 방법 |
Country Status (7)
Country | Link |
---|---|
US (2) | US6649423B2 (ko) |
EP (1) | EP1300853B1 (ko) |
JP (1) | JP4456805B2 (ko) |
KR (1) | KR100923772B1 (ko) |
CN (1) | CN100336239C (ko) |
DE (1) | DE60203677T2 (ko) |
TW (1) | TWI222063B (ko) |
Families Citing this family (17)
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KR100407907B1 (ko) * | 2001-05-15 | 2003-12-03 | 한국과학기술연구원 | 자기 터널 접합 소자의 열처리 방법과 그 방법으로 제조된자기 터널 접합 소자 |
US6717194B2 (en) * | 2001-10-30 | 2004-04-06 | Micron Technology, Inc. | Magneto-resistive bit structure and method of manufacture therefor |
FR2832542B1 (fr) * | 2001-11-16 | 2005-05-06 | Commissariat Energie Atomique | Dispositif magnetique a jonction tunnel magnetique, memoire et procedes d'ecriture et de lecture utilisant ce dispositif |
US6744651B2 (en) * | 2002-09-20 | 2004-06-01 | Taiwan Semiconductor Manufacturing Company | Local thermal enhancement of magnetic memory cell during programming |
US20040085463A1 (en) * | 2002-11-06 | 2004-05-06 | Manish Sharma | Imaging system with non-volatile memory |
US7189583B2 (en) * | 2003-07-02 | 2007-03-13 | Micron Technology, Inc. | Method for production of MRAM elements |
US7473656B2 (en) * | 2003-10-23 | 2009-01-06 | International Business Machines Corporation | Method for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacks |
US20050237676A1 (en) * | 2004-04-26 | 2005-10-27 | Hitachi Global Storage Technologies | Fe seeded self-pinned sensor |
JP2007207919A (ja) | 2006-01-31 | 2007-08-16 | Toshiba Corp | 磁気抵抗効果素子および磁気メモリ |
US7646569B2 (en) * | 2006-07-20 | 2010-01-12 | Hitachi Global Storage Technologies Netherlands B.V. | Pinned layer in magnetoresistive sensor |
US20090218645A1 (en) * | 2007-02-12 | 2009-09-03 | Yadav Technology Inc. | multi-state spin-torque transfer magnetic random access memory |
US7834410B2 (en) * | 2009-04-13 | 2010-11-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spin torque transfer magnetic tunnel junction structure |
US20100315869A1 (en) * | 2009-06-15 | 2010-12-16 | Magic Technologies, Inc. | Spin torque transfer MRAM design with low switching current |
CN104766924A (zh) * | 2014-01-08 | 2015-07-08 | 上海矽睿科技有限公司 | 一种磁性材料退火工艺 |
KR101661275B1 (ko) * | 2014-04-18 | 2016-09-29 | 한양대학교 산학협력단 | 메모리 소자 |
CN105280214B (zh) * | 2015-09-10 | 2018-02-27 | 中国科学院物理研究所 | 电流驱动型磁随机存取存储器和自旋逻辑器件 |
CN112289922B (zh) * | 2019-07-22 | 2023-05-30 | 中电海康集团有限公司 | 磁传感器及其制作方法 |
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US5650958A (en) * | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
JP3219713B2 (ja) * | 1997-02-07 | 2001-10-15 | アルプス電気株式会社 | 磁気抵抗効果素子の製造方法 |
US6048739A (en) * | 1997-12-18 | 2000-04-11 | Honeywell Inc. | Method of manufacturing a high density magnetic memory device |
US6114719A (en) * | 1998-05-29 | 2000-09-05 | International Business Machines Corporation | Magnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cell |
US6081446A (en) * | 1998-06-03 | 2000-06-27 | Hewlett-Packard Company | Multiple bit magnetic memory cell |
US5982660A (en) | 1998-08-27 | 1999-11-09 | Hewlett-Packard Company | Magnetic memory cell with off-axis reference layer orientation for improved response |
US6166948A (en) * | 1999-09-03 | 2000-12-26 | International Business Machines Corporation | Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers |
US6326637B1 (en) * | 1999-10-18 | 2001-12-04 | International Business Machines Corporation | Antiferromagnetically exchange-coupled structure for magnetic tunnel junction device |
US6285581B1 (en) * | 1999-12-13 | 2001-09-04 | Motorola, Inc. | MRAM having semiconductor device integrated therein |
JP2001196658A (ja) * | 2000-01-07 | 2001-07-19 | Fujitsu Ltd | 磁気素子及び磁気記憶装置 |
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US6541316B2 (en) * | 2000-12-22 | 2003-04-01 | The Regents Of The University Of California | Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction |
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US6741496B2 (en) * | 2001-09-27 | 2004-05-25 | Intel Corporation | Electron spin mechanisms for inducing magnetic-polarization reversal |
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-
2001
- 2001-10-04 US US09/971,347 patent/US6649423B2/en not_active Expired - Lifetime
-
2002
- 2002-08-30 TW TW091119863A patent/TWI222063B/zh not_active IP Right Cessation
- 2002-09-25 JP JP2002278935A patent/JP4456805B2/ja not_active Expired - Fee Related
- 2002-09-30 CN CNB021444978A patent/CN100336239C/zh not_active Expired - Lifetime
- 2002-10-02 KR KR1020020060055A patent/KR100923772B1/ko active IP Right Grant
- 2002-10-03 EP EP02256879A patent/EP1300853B1/en not_active Expired - Lifetime
- 2002-10-03 DE DE60203677T patent/DE60203677T2/de not_active Expired - Lifetime
-
2003
- 2003-07-23 US US10/626,447 patent/US6828610B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100923772B1 (ko) | 2009-10-27 |
US20030067802A1 (en) | 2003-04-10 |
US20040129928A1 (en) | 2004-07-08 |
JP2003218430A (ja) | 2003-07-31 |
EP1300853B1 (en) | 2005-04-13 |
US6828610B2 (en) | 2004-12-07 |
CN100336239C (zh) | 2007-09-05 |
DE60203677T2 (de) | 2006-03-02 |
US6649423B2 (en) | 2003-11-18 |
EP1300853A1 (en) | 2003-04-09 |
JP4456805B2 (ja) | 2010-04-28 |
TWI222063B (en) | 2004-10-11 |
DE60203677D1 (de) | 2005-05-19 |
CN1412863A (zh) | 2003-04-23 |
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