KR100910571B1 - 자기 메모리 장치 - Google Patents
자기 메모리 장치 Download PDFInfo
- Publication number
- KR100910571B1 KR100910571B1 KR1020020057732A KR20020057732A KR100910571B1 KR 100910571 B1 KR100910571 B1 KR 100910571B1 KR 1020020057732 A KR1020020057732 A KR 1020020057732A KR 20020057732 A KR20020057732 A KR 20020057732A KR 100910571 B1 KR100910571 B1 KR 100910571B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
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- read
- ferromagnetic
- magnetic
- Prior art date
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (10)
- 자기 메모리 장치(magnetic memory device)(10)로서,서로 다른 포화보자력(coercivity)을 갖는 제 1 및 제 2 강자성층(ferromagnetic layer)(12,14)- 각 강자성층은 그 자화 방향(magnetization)이 두 방향 중 어느 한쪽으로 방향 설정될 수 있음 -과,상기 제 1 및 제 2 강자성층 사이에 이격층(spacer layer)(16)과,상기 제 2 강자성층 상의 제 1 도전체(20)와,상기 제 1 도전체 상의 전기적 절연체(electrical insulator)(24)와,상기 절연체 상의 제 2 도전체(22)를 포함하는자기 메모리 장치(10).
- 제 1 항에 있어서,상기 제 1 강자성층(12)은 상기 제 2 강자성층(14)보다 더 높은 포화보자력을 가지는자기 메모리 장치(10).
- 제 2 항에 있어서,상기 제 1 강자성층(12)은 데이터층(data layer)이고, 상기 제 2 강자성층(14)은 기준층(reference layer)인자기 메모리 장치(10).
- 제 3 항에 있어서,상기 데이터층과 상기 기준층이 서로 다른 강자성체(ferromagnetic material)로 구성된자기 메모리 장치(10).
- 삭제
- 삭제
- 삭제
- 제 1 항에 있어서,상기 제 1 강자성층(12)과 접촉하고 있는 제 3 도전체(18)- 상기 제 3 도전체는 상기 제 1 도전체(20)와 직교(orthogonal)함 -를 더 포함하는자기 메모리 장치(10).
- 삭제
- 제 1 항에 있어서,상기 이격층(16)이 절연 터널 장벽(insulating tunnel barrier)인자기 메모리 장치(10).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/963,171 US6576969B2 (en) | 2001-09-25 | 2001-09-25 | Magneto-resistive device having soft reference layer |
US09/963,171 | 2001-09-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030027690A KR20030027690A (ko) | 2003-04-07 |
KR100910571B1 true KR100910571B1 (ko) | 2009-08-03 |
Family
ID=25506840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020057732A KR100910571B1 (ko) | 2001-09-25 | 2002-09-24 | 자기 메모리 장치 |
Country Status (6)
Country | Link |
---|---|
US (2) | US6576969B2 (ko) |
EP (1) | EP1298669A3 (ko) |
JP (1) | JP4226295B2 (ko) |
KR (1) | KR100910571B1 (ko) |
CN (1) | CN100350495C (ko) |
TW (1) | TWI269429B (ko) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002163809A (ja) * | 2000-11-22 | 2002-06-07 | Sony Corp | 磁気抵抗効果素子の製造方法と磁気抵抗効果型磁気ヘッドの製造方法 |
US6795281B2 (en) * | 2001-09-25 | 2004-09-21 | Hewlett-Packard Development Company, L.P. | Magneto-resistive device including soft synthetic ferrimagnet reference layer |
US6936903B2 (en) * | 2001-09-25 | 2005-08-30 | Hewlett-Packard Development Company, L.P. | Magnetic memory cell having a soft reference layer |
JP2003124445A (ja) * | 2001-10-17 | 2003-04-25 | Nec Corp | 磁性記憶装置とその製造方法 |
JP2003151262A (ja) * | 2001-11-15 | 2003-05-23 | Toshiba Corp | 磁気ランダムアクセスメモリ |
DE10158795B4 (de) * | 2001-11-30 | 2005-12-22 | Infineon Technologies Ag | Magnetoresistive Speicherzelle mit dynamischer Referenzschicht |
US6967350B2 (en) * | 2002-04-02 | 2005-11-22 | Hewlett-Packard Development Company, L.P. | Memory structures |
DE10214946B4 (de) * | 2002-04-04 | 2006-01-19 | "Stiftung Caesar" (Center Of Advanced European Studies And Research) | TMR-Sensor |
US6850433B2 (en) * | 2002-07-15 | 2005-02-01 | Hewlett-Packard Development Company, Lp. | Magnetic memory device and method |
US6654278B1 (en) * | 2002-07-31 | 2003-11-25 | Motorola, Inc. | Magnetoresistance random access memory |
JP3788964B2 (ja) | 2002-09-10 | 2006-06-21 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
US6870758B2 (en) * | 2002-10-30 | 2005-03-22 | Hewlett-Packard Development Company, L.P. | Magnetic memory device and methods for making same |
JP2004296000A (ja) * | 2003-03-27 | 2004-10-21 | Hitachi Ltd | 磁気抵抗効果型ヘッド、及びその製造方法 |
KR100522943B1 (ko) * | 2003-04-25 | 2005-10-25 | 학교법인고려중앙학원 | 소자 크기 변화에 무관하게 작고 안정한 바이어스 자기장을 갖는 자기 저항 구조 |
US7193889B2 (en) * | 2004-02-11 | 2007-03-20 | Hewlett-Packard Development Company, Lp. | Switching of MRAM devices having soft magnetic reference layers |
US7102920B2 (en) * | 2004-03-23 | 2006-09-05 | Hewlett-Packard Development Company, L.P. | Soft-reference three conductor magnetic memory storage device |
US7211874B2 (en) * | 2004-04-06 | 2007-05-01 | Headway Technologies, Inc. | Magnetic random access memory array with free layer locking mechanism |
EP1705665B1 (en) * | 2005-03-24 | 2008-04-02 | Hitachi Ltd. | Conduction control device |
KR100684893B1 (ko) * | 2005-03-28 | 2007-02-20 | 삼성전자주식회사 | 자기 메모리 장치 및 그 제조방법 |
US7457153B1 (en) | 2005-11-23 | 2008-11-25 | Samsung Electronics Co., Ltd. | Integrated circuit memory devices having magnetic memory cells therein that utilize dual-ferromagnetic data layers |
US7391641B2 (en) * | 2005-11-23 | 2008-06-24 | Samsung Electronics Co., Ltd. | Multi-layered magnetic memory structures |
KR100963132B1 (ko) * | 2008-04-03 | 2010-06-15 | 한양대학교 산학협력단 | 멀티비트 강유전체 기억소자 |
FR2966636B1 (fr) * | 2010-10-26 | 2012-12-14 | Centre Nat Rech Scient | Element magnetique inscriptible |
WO2015047194A1 (en) * | 2013-09-24 | 2015-04-02 | National University Of Singapore | Spin orbit and spin transfer torque-based spintronics devices |
JP2019087688A (ja) | 2017-11-09 | 2019-06-06 | Tdk株式会社 | 磁気センサ |
JP2020042882A (ja) * | 2018-09-12 | 2020-03-19 | キオクシア株式会社 | 磁気メモリ |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5702831A (en) * | 1995-11-06 | 1997-12-30 | Motorola | Ferromagnetic GMR material |
JPH11176149A (ja) * | 1997-12-08 | 1999-07-02 | Victor Co Of Japan Ltd | 磁性メモリー |
JP2000357389A (ja) * | 1998-05-19 | 2000-12-26 | Canon Inc | 巨大磁気抵抗効果を利用したメモリ素子 |
US6166948A (en) * | 1999-09-03 | 2000-12-26 | International Business Machines Corporation | Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers |
US6172904B1 (en) * | 2000-01-27 | 2001-01-09 | Hewlett-Packard Company | Magnetic memory cell with symmetric switching characteristics |
JP2001101858A (ja) * | 1999-09-27 | 2001-04-13 | Victor Co Of Japan Ltd | 磁性メモリ |
Family Cites Families (12)
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US5841611A (en) * | 1994-05-02 | 1998-11-24 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same |
US5587943A (en) * | 1995-02-13 | 1996-12-24 | Integrated Microtransducer Electronics Corporation | Nonvolatile magnetoresistive memory with fully closed flux operation |
US5585986A (en) * | 1995-05-15 | 1996-12-17 | International Business Machines Corporation | Digital magnetoresistive sensor based on the giant magnetoresistance effect |
DE19704847A1 (de) | 1997-02-08 | 1998-08-13 | Egmo Ltd | Ventil |
EP0875901B1 (en) * | 1997-04-28 | 2006-08-09 | Canon Kabushiki Kaisha | Magnetic thin-film memory element utilizing GMR effect, and magnetic thin-film memory |
US6211559B1 (en) * | 1998-02-27 | 2001-04-03 | Motorola, Inc. | Symmetric magnetic tunnel device |
US6023395A (en) * | 1998-05-29 | 2000-02-08 | International Business Machines Corporation | Magnetic tunnel junction magnetoresistive sensor with in-stack biasing |
US6034887A (en) * | 1998-08-05 | 2000-03-07 | International Business Machines Corporation | Non-volatile magnetic memory cell and devices |
US6005800A (en) * | 1998-11-23 | 1999-12-21 | International Business Machines Corporation | Magnetic memory array with paired asymmetric memory cells for improved write margin |
JP2000208831A (ja) * | 1999-01-18 | 2000-07-28 | Sony Corp | 磁気抵抗素子及びこれを用いた磁気デバイス |
US6469878B1 (en) * | 1999-02-11 | 2002-10-22 | Seagate Technology Llc | Data head and method using a single antiferromagnetic material to pin multiple magnetic layers with differing orientation |
US6538920B2 (en) * | 2001-04-02 | 2003-03-25 | Manish Sharma | Cladded read conductor for a pinned-on-the-fly soft reference layer |
-
2001
- 2001-09-25 US US09/963,171 patent/US6576969B2/en not_active Expired - Lifetime
-
2002
- 2002-08-07 TW TW091117787A patent/TWI269429B/zh not_active IP Right Cessation
- 2002-09-02 EP EP02256085A patent/EP1298669A3/en not_active Withdrawn
- 2002-09-19 JP JP2002273448A patent/JP4226295B2/ja not_active Expired - Fee Related
- 2002-09-24 CN CNB021323437A patent/CN100350495C/zh not_active Expired - Lifetime
- 2002-09-24 KR KR1020020057732A patent/KR100910571B1/ko active IP Right Grant
-
2003
- 2003-01-25 US US10/351,013 patent/US6891746B2/en not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5702831A (en) * | 1995-11-06 | 1997-12-30 | Motorola | Ferromagnetic GMR material |
JPH11176149A (ja) * | 1997-12-08 | 1999-07-02 | Victor Co Of Japan Ltd | 磁性メモリー |
JP2000357389A (ja) * | 1998-05-19 | 2000-12-26 | Canon Inc | 巨大磁気抵抗効果を利用したメモリ素子 |
US6166948A (en) * | 1999-09-03 | 2000-12-26 | International Business Machines Corporation | Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers |
JP2001101858A (ja) * | 1999-09-27 | 2001-04-13 | Victor Co Of Japan Ltd | 磁性メモリ |
US6172904B1 (en) * | 2000-01-27 | 2001-01-09 | Hewlett-Packard Company | Magnetic memory cell with symmetric switching characteristics |
Also Published As
Publication number | Publication date |
---|---|
JP4226295B2 (ja) | 2009-02-18 |
KR20030027690A (ko) | 2003-04-07 |
US6891746B2 (en) | 2005-05-10 |
TWI269429B (en) | 2006-12-21 |
EP1298669A2 (en) | 2003-04-02 |
JP2003188358A (ja) | 2003-07-04 |
US20030058684A1 (en) | 2003-03-27 |
US6576969B2 (en) | 2003-06-10 |
CN1466148A (zh) | 2004-01-07 |
CN100350495C (zh) | 2007-11-21 |
US20030137868A1 (en) | 2003-07-24 |
EP1298669A3 (en) | 2004-02-04 |
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