KR20020092003A - 반도체 소자의 구리 배선 형성 방법 - Google Patents
반도체 소자의 구리 배선 형성 방법 Download PDFInfo
- Publication number
- KR20020092003A KR20020092003A KR1020010030846A KR20010030846A KR20020092003A KR 20020092003 A KR20020092003 A KR 20020092003A KR 1020010030846 A KR1020010030846 A KR 1020010030846A KR 20010030846 A KR20010030846 A KR 20010030846A KR 20020092003 A KR20020092003 A KR 20020092003A
- Authority
- KR
- South Korea
- Prior art keywords
- copper
- deposited
- barrier metal
- forming
- layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 239000010949 copper Substances 0.000 claims abstract description 59
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229910052802 copper Inorganic materials 0.000 claims abstract description 57
- 239000010410 layer Substances 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 239000011229 interlayer Substances 0.000 claims abstract description 22
- 230000004888 barrier function Effects 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000007772 electroless plating Methods 0.000 claims description 12
- 238000005240 physical vapour deposition Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 239000003054 catalyst Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 230000009977 dual effect Effects 0.000 abstract description 4
- 238000007747 plating Methods 0.000 abstract description 2
- 230000005012 migration Effects 0.000 abstract 2
- 238000013508 migration Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (8)
- 하부 금속 배선이 형성된 기판 상에 층간 절연막을 증착하는 단계;상기 층간 절연막을 선택적으로 제거하여 비아 및 트렌치를 형성하는 단계;상기 비아 및 트렌치를 포함한 층간 절연막 상에 배리어 금속막을 형성하는 단계;상기 비아 및 트렌치를 매립하도록 배리어 금속막이 증착된 전면에 충분히 구리를 증착하는 단계;상기 층간 절연막 상부 표면을 엔드 포인트로 하여 평탄화하는 단계;상기 평탄화된 층간 절연막 및 매립된 트렌치 표면에 캡핑층을 증착하는 단계를 포함하여 이루어짐을 특징으로 하는 반도체 소자의 구리 배선 형성 방법.
- 제 1항에 있어서, 상기 배리어 금속막을 100내지 800Å의 두께로 증착함을 특징으로 하는 반도체 소자의 구리 배선 형성 방법.
- 제 2항에 있어서, 상기 배리어 금속막은 Ta으로 증착함을 특징으로 하는 반도체 소자의 구리 배선 형성 방법.
- 제 2항에 있어서, 상기 Ta는 이온화 물리 기상 증착법으로 증착함을 특징으로 하는 반도체 소자의 구리 배선 형성 방법.
- 제 1항에 있어서, 무전해 도금법을 이용하여 구리 매립 공정을 진행함을 특징으로 하는 반도체 소자의 구리 배선 형성 방법.
- 제 1항에 있어서, 상기 Pt를 초기 촉매로 사용함을 특징으로 하는 반도체 소자의 구리 배선 형성 방법.
- 제 6항에 있어서, 상기 Pt를 이온화 물리 기상 증착법으로 증착함을 특징으로 하는 반도체 소자의 구리 배선 형성 방법.
- 제 6항에 있어서, 상기 Pt를 50 내지 200Å의 두께의 층으로 형성함을 특징으로 하는 반도체 소자의 구리 배선 형성 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010030846A KR100720401B1 (ko) | 2001-06-01 | 2001-06-01 | 반도체 소자의 구리 배선 형성 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010030846A KR100720401B1 (ko) | 2001-06-01 | 2001-06-01 | 반도체 소자의 구리 배선 형성 방법 |
Publications (2)
Publication Number | Publication Date |
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KR20020092003A true KR20020092003A (ko) | 2002-12-11 |
KR100720401B1 KR100720401B1 (ko) | 2007-05-22 |
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KR1020010030846A KR100720401B1 (ko) | 2001-06-01 | 2001-06-01 | 반도체 소자의 구리 배선 형성 방법 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100458594B1 (ko) * | 2002-10-02 | 2004-12-03 | 아남반도체 주식회사 | 반도체 소자 제조 방법 |
KR101107229B1 (ko) * | 2004-12-27 | 2012-01-25 | 매그나칩 반도체 유한회사 | 반도체 소자의 금속 배선 형성 방법 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101060560B1 (ko) * | 2003-12-10 | 2011-08-31 | 매그나칩 반도체 유한회사 | 반도체 소자의 금속배선 형성방법 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100265615B1 (ko) * | 1998-06-29 | 2000-10-02 | 김영환 | 반도체 소자의 금속배선 제조방법 |
KR20010028986A (ko) * | 1999-09-28 | 2001-04-06 | 윤종용 | 반도체 장치의 비아 콘택 제조방법 |
-
2001
- 2001-06-01 KR KR1020010030846A patent/KR100720401B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100458594B1 (ko) * | 2002-10-02 | 2004-12-03 | 아남반도체 주식회사 | 반도체 소자 제조 방법 |
KR101107229B1 (ko) * | 2004-12-27 | 2012-01-25 | 매그나칩 반도체 유한회사 | 반도체 소자의 금속 배선 형성 방법 |
Also Published As
Publication number | Publication date |
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KR100720401B1 (ko) | 2007-05-22 |
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