KR20020081235A - 석영 도가니의 제조방법 - Google Patents
석영 도가니의 제조방법 Download PDFInfo
- Publication number
- KR20020081235A KR20020081235A KR1020027008317A KR20027008317A KR20020081235A KR 20020081235 A KR20020081235 A KR 20020081235A KR 1020027008317 A KR1020027008317 A KR 1020027008317A KR 20027008317 A KR20027008317 A KR 20027008317A KR 20020081235 A KR20020081235 A KR 20020081235A
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- atmosphere
- mold
- crucible
- desired gas
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000010453 quartz Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title description 8
- 239000007789 gas Substances 0.000 claims abstract description 107
- 239000000463 material Substances 0.000 claims abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 28
- 230000004927 fusion Effects 0.000 claims description 27
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- 239000000203 mixture Substances 0.000 claims description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 13
- 239000001307 helium Substances 0.000 claims description 13
- 229910052734 helium Inorganic materials 0.000 claims description 13
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 238000012544 monitoring process Methods 0.000 claims description 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 6
- 238000004320 controlled atmosphere Methods 0.000 claims description 5
- 229910052754 neon Inorganic materials 0.000 claims description 5
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 5
- 239000012080 ambient air Substances 0.000 claims description 4
- 238000010891 electric arc Methods 0.000 claims description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 3
- 239000001569 carbon dioxide Substances 0.000 claims description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052704 radon Inorganic materials 0.000 claims description 3
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims 3
- 230000000977 initiatory effect Effects 0.000 claims 2
- 239000004576 sand Substances 0.000 description 19
- 239000013078 crystal Substances 0.000 description 17
- 239000006260 foam Substances 0.000 description 12
- 239000003570 air Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 239000000155 melt Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000006004 Quartz sand Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000011176 pooling Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000001932 seasonal effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
- C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Melting And Manufacturing (AREA)
Abstract
Description
Claims (20)
- (a) 도가니 몰드를 둘러싸는 적어도 실질적으로 밀폐된 챔버를 제공하고,(b) 상기 챔버 내의 분위기를 기체의 총 유출이 기체의 총 유입보다 적은 양(+)의 압력으로 조절하고,(c) 열원을 개시하여 상기 몰드의 라이닝 석영 재료를 용융시키고,(d) 상기 석영 재료를 융합시키는 것을 포함하는 석영 도가니의 형성방법.
- 제 1 항에 있어서,상기 열원이 전기 아크(electric arc)를 포함하는 방법.
- 제 1 항에 있어서,진공이 상기 기체를 상기 석영 재료 및 상기 몰드를 통하여 배기시키는 방법.
- 제 3 항에 있어서,진공이 약 75,000Pa 미만인 방법.
- 제 3 항에 있어서,상기 진공을 통해 배기된 기체를 모니터링함을 추가로 포함하는 방법.
- 제 5 항에 있어서,상기 모니터링 단계로부터 목적하는 기체 조성물이 결정된 후에 상기 열원을 개시하는 방법.
- 제 1 항에 있어서,상기 몰드 주위의 플레넘(plenum)을 통해 상기 기체를 도입하는 방법.
- 제 7 항에 있어서,상기 기체를 낮은 선형 속도에서 고부피의 유동량으로 도입하는 방법.
- 제 1 항에 있어서,상기 유입 기체가 상기 챔버 내의 주위 공기를 대체하는 방법.
- 제 9 항에 있어서,상기 유입 기체가 헬륨, 수소, 산소, 질소, 네온, 아르곤, 크립톤, 크세논, 불소, 염소, 브롬, 라돈, 일산화탄소, 이산화탄소, 수증기 및 이들의 혼합물로 이루어진 군으로부터 선택되는 방법.
- 제 9 항에 있어서,상기 열원을 개시하는 시점에서, 상기 주위 공기가 상기 분위기의 약 10% 미만을구성하는 방법.
- 제 9 항에 있어서,상기 아크를 가하는 시점에서, 상기 주위 공기가 상기 분위기의 약 2% 미만을 구성하는 방법.
- 제 1 항에 있어서,상기 기체의 유입 및 유출을 조절함으로써 상기 기체의 화학량론을 조절하는 방법.
- (a) 주위 분위기를 목적하는 기체를 포함하는 분위기로 대체하고,(b) 상기 목적하는 기체가 도가니 몰드를 통과한 후의 시점에서, 상기 목적하는 기체의 유출을 모니터링하고,(c) 상기 목적하는 기체가 상기 모니터링 단계에서 확인된 후 상기 몰드 안에서 상기 도가니를 융합시킴으로써, 도가니 몰드를 둘러싸는 분위기를 조절함을 포함하는 석영 도가니의 형성방법.
- 제 14 항에 있어서,상기 융합 단계가 시작된 후 상기 목적하는 기체를 포함하는 화합물을 변화시킴을 추가로 포함하는 방법.
- 제 14 항에 있어서,상기 목적하는 기체가 2개 이상의 화합물을 포함하되, 상기 화합물의 비율을 상기 융합 단계가 시작된 후에 변경시킴을 추가로 포함하는 방법.
- 제 14 항에 있어서,상기 목적하는 기체가 헬륨, 수소, 산소, 질소, 네온, 아르곤, 크립톤, 크세논, 불소, 염소, 브롬, 라돈, 일산화탄소, 이산화탄소, 수증기 및 이들의 혼합물로 이루어진 군으로부터 선택되는 방법.
- 제 14 항에 있어서,목적하는 기체를 포함하는 상기 분위기가 상기 목적하는 기체의 총 유출이 상기 목적하는 기체의 총 유입보다 적은 양(+)의 압력에서 유지하는 방법.
- 제 14 항에 있어서,상기 기체를 낮은 선형의 속도에서 고부피 유동량으로 도입하는 방법.
- 제 14 항에 있어서,융합 단계를 시작하는 시점에서, 상기 주위 분위기가 조절된 분위기의 약 10% 미만인 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/697,904 US6502422B1 (en) | 2000-10-27 | 2000-10-27 | Method for quartz crucible fabrication |
US09/697,904 | 2000-10-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020081235A true KR20020081235A (ko) | 2002-10-26 |
KR100815656B1 KR100815656B1 (ko) | 2008-03-20 |
Family
ID=24803067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020027008317A KR100815656B1 (ko) | 2000-10-27 | 2001-10-24 | 석영 도가니의 제조방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6502422B1 (ko) |
EP (1) | EP1347945B1 (ko) |
JP (1) | JP4133329B2 (ko) |
KR (1) | KR100815656B1 (ko) |
NO (1) | NO20023087L (ko) |
TW (1) | TWI244467B (ko) |
WO (1) | WO2002060827A2 (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030226376A1 (en) * | 2002-06-10 | 2003-12-11 | General Electric Company | Fabrication of heavy walled silica tubing |
US20060281623A1 (en) | 2005-06-10 | 2006-12-14 | General Electric Company | Free-formed quartz glass ingots and method for making the same |
US7625197B2 (en) | 2005-09-12 | 2009-12-01 | Johnson & Johnson Vision Care, Inc. | Devices and processes for performing degassing operations |
EP2172432A4 (en) * | 2007-07-28 | 2014-04-16 | Japan Super Quartz Corp | METHOD FOR PRODUCING A QUARTZ GLASS TAIL AND DEVICE FOR PRODUCING THE QUARTZ GLASS TIEGEL |
DE102008026890B3 (de) * | 2008-06-05 | 2009-06-04 | Heraeus Quarzglas Gmbh & Co. Kg | Verfahren und Vorrichtung zur Herstellung eines Tiegels aus Quarzglas |
US8272234B2 (en) * | 2008-12-19 | 2012-09-25 | Heraeus Shin-Etsu America, Inc. | Silica crucible with pure and bubble free inner crucible layer and method of making the same |
GB0903017D0 (en) * | 2009-02-23 | 2009-04-08 | Ceravision Ltd | Plasma crucible sealing |
US9003832B2 (en) * | 2009-11-20 | 2015-04-14 | Heraeus Shin-Etsu America, Inc. | Method of making a silica crucible in a controlled atmosphere |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3014311C2 (de) * | 1980-04-15 | 1982-06-16 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Verfahren zur Herstellung von Quarzglastiegeln und Vorrichtung zur Durchführung dieses Verfahrens |
US4935046A (en) * | 1987-12-03 | 1990-06-19 | Shin-Etsu Handotai Company, Limited | Manufacture of a quartz glass vessel for the growth of single crystal semiconductor |
JP2561105B2 (ja) | 1987-12-15 | 1996-12-04 | 東芝セラミックス株式会社 | 石英ガラスルツボの製造方法 |
US4897100A (en) * | 1989-01-13 | 1990-01-30 | Owens-Corning Fiberglas Corporation | Apparatus and process for fiberizing fluoride glasses using a double crucible and the compositions produced thereby |
JP2866115B2 (ja) | 1989-09-25 | 1999-03-08 | 東芝セラミックス株式会社 | 石英ガラス容器の製造装置 |
JP2830987B2 (ja) | 1994-07-19 | 1998-12-02 | 信越石英株式会社 | 石英ガラスルツボ及びその製造方法 |
JP4285788B2 (ja) * | 1996-03-14 | 2009-06-24 | 信越石英株式会社 | 単結晶引き上げ用大口径石英るつぼの製造方法 |
JP3625636B2 (ja) | 1998-01-08 | 2005-03-02 | 東芝セラミックス株式会社 | シリコン単結晶引上げ用石英ガラスルツボの製造方法 |
US5913975A (en) | 1998-02-03 | 1999-06-22 | Memc Electronic Materials, Inc. | Crucible and method of preparation thereof |
-
2000
- 2000-10-27 US US09/697,904 patent/US6502422B1/en not_active Expired - Lifetime
-
2001
- 2001-10-23 TW TW090126174A patent/TWI244467B/zh not_active IP Right Cessation
- 2001-10-24 EP EP01994498A patent/EP1347945B1/en not_active Expired - Lifetime
- 2001-10-24 KR KR1020027008317A patent/KR100815656B1/ko active IP Right Grant
- 2001-10-24 WO PCT/US2001/050770 patent/WO2002060827A2/en active Application Filing
- 2001-10-24 JP JP2002560984A patent/JP4133329B2/ja not_active Expired - Lifetime
-
2002
- 2002-06-26 NO NO20023087A patent/NO20023087L/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP1347945B1 (en) | 2013-03-27 |
JP4133329B2 (ja) | 2008-08-13 |
NO20023087D0 (no) | 2002-06-26 |
WO2002060827A2 (en) | 2002-08-08 |
NO20023087L (no) | 2002-08-26 |
JP2004518601A (ja) | 2004-06-24 |
KR100815656B1 (ko) | 2008-03-20 |
WO2002060827A3 (en) | 2002-10-03 |
US6502422B1 (en) | 2003-01-07 |
EP1347945A2 (en) | 2003-10-01 |
TWI244467B (en) | 2005-12-01 |
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