KR20010094961A - 반도체장치의 제조방법 및 반도체 제조장치 - Google Patents
반도체장치의 제조방법 및 반도체 제조장치 Download PDFInfo
- Publication number
- KR20010094961A KR20010094961A KR1020010011966A KR20010011966A KR20010094961A KR 20010094961 A KR20010094961 A KR 20010094961A KR 1020010011966 A KR1020010011966 A KR 1020010011966A KR 20010011966 A KR20010011966 A KR 20010011966A KR 20010094961 A KR20010094961 A KR 20010094961A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- ruthenium
- film forming
- forming step
- initial
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 81
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 81
- 238000000034 method Methods 0.000 claims abstract description 59
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims abstract description 38
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000002994 raw material Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims abstract description 16
- 239000007789 gas Substances 0.000 claims description 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 36
- 229910052760 oxygen Inorganic materials 0.000 claims description 36
- 239000001301 oxygen Substances 0.000 claims description 36
- 230000015572 biosynthetic process Effects 0.000 claims description 24
- 239000007788 liquid Substances 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 description 16
- 230000008021 deposition Effects 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 13
- 239000003990 capacitor Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- -1 ethylcyclopentadienyl Chemical group 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- FCIBCALVQNVXGB-UHFFFAOYSA-N [Ru].[CH]1C=CC=C1 Chemical compound [Ru].[CH]1C=CC=C1 FCIBCALVQNVXGB-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- NQZFAUXPNWSLBI-UHFFFAOYSA-N carbon monoxide;ruthenium Chemical group [Ru].[Ru].[Ru].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] NQZFAUXPNWSLBI-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (9)
- 루테늄액체원료를 기화한 가스와 산소함유가스를 사용하여, 기판상에 루테늄막 또는 산화루테늄막을 성막할 때에,상기 성막하는 공정은, 초기성막공정과 상기 초기성막공정과는 다른 성막 조건으로 상기 초기성막공정으로 형성한 막보다 두껍게 성막하는 본성막공정을 갖는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 1 항에 있어서,상기 초기성막공정과 본성막공정은 열CVD 법에 의해 동일 반응실내에서 연속하여 실시되는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 1 항에 있어서,초기성막공정보다도 본성막공정측이 피복단차성이 양호해지는 조건으로 성막을 행하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 1 항에 있어서,본성막공정보다도 초기성막공정측이 성막속도가 커지도록 하여 성막을 행하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 1 항에 있어서,본성막공정보다도 초기성막공정측이 성막온도가 높아지도록, 또는 성막압력이 높아지도록 하여 성막을 행하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 1 항에 있어서,본성막공정보다도 초기성막공정측이 루테늄원료 유량에 대한 산소함유가스유량의 비가 커지도록 하여 성막을 행하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 1 항에 있어서,초기성막공정에서는 온도 300 ∼ 350 ℃ 및 압력 667 ∼ 3999 ㎩ 의 범위에서 성막을 행하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 1 항에 있어서,상기 루테늄액체원료는 비스에틸시클로펜타디에닐루테늄인 것을 특징으로 하는 반도체장치의 제조방법.
- 기판을 수용할 수 있는 하나의 반응실, 상기 기판상에 루테늄막 또는 산화루테늄막을 성막하기 위한 원료가스를 상기 반응실에 공급하는 가스공급구, 및 상기 원료가스를 상기 반응실로부터 배기하는 가스배기구를 포함하고,상기 원료가스를 상기 가스공급구로부터 기판을 향하여 공급하고, 열CVD 법으로 상기 기판상에 루테늄막 또는 산화루테늄막을 성막하고, 이어서 상기 루테늄막 또는 산화루테늄막을 베이스로 상기 루테늄막 또는 산화루테늄막의 성막과는 다른 성막조건으로 상기 루테늄막 또는 산화루테늄막 및 두꺼운 막두께의 루테늄막 또는 산화루테늄막을 열CVD 법으로 성막하도록 한 것을 특징으로 하는 반도체 제조장치.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000099754 | 2000-03-31 | ||
JP2000-99754 | 2000-03-31 | ||
JP2001-24360 | 2001-01-31 | ||
JP2001024360A JP4034518B2 (ja) | 2000-03-31 | 2001-01-31 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010094961A true KR20010094961A (ko) | 2001-11-03 |
KR100769513B1 KR100769513B1 (ko) | 2007-10-23 |
Family
ID=26589271
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020010011966A KR100769513B1 (ko) | 2000-03-31 | 2001-03-08 | 반도체장치의 제조방법 및 반도체 제조장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6548404B2 (ko) |
JP (1) | JP4034518B2 (ko) |
KR (1) | KR100769513B1 (ko) |
TW (1) | TW516125B (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100434489B1 (ko) * | 2001-03-22 | 2004-06-05 | 삼성전자주식회사 | 루테늄 산화막 씨딩층을 포함하는 루테늄막 증착 방법 |
KR100443356B1 (ko) * | 2001-12-29 | 2004-08-09 | 주식회사 하이닉스반도체 | 루테늄막의 단원자층 증착법 |
US9269568B2 (en) | 2009-07-27 | 2016-02-23 | Wonik Ips Co., Ltd | Method of manufacturing semiconductor device using the same |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6492241B1 (en) * | 2000-04-10 | 2002-12-10 | Micron Technology, Inc. | Integrated capacitors fabricated with conductive metal oxides |
JP2002134715A (ja) * | 2000-10-23 | 2002-05-10 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
KR20030003329A (ko) * | 2001-06-30 | 2003-01-10 | 주식회사 하이닉스반도체 | 루테늄박막의 화학적기상증착 방법 |
JP4770145B2 (ja) | 2003-10-07 | 2011-09-14 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
KR100613388B1 (ko) * | 2004-12-23 | 2006-08-17 | 동부일렉트로닉스 주식회사 | 다마신법을 이용한 구리 배선층을 갖는 반도체 소자 및 그형성 방법 |
KR100707668B1 (ko) * | 2005-12-27 | 2007-04-13 | 동부일렉트로닉스 주식회사 | 반도체 소자의 금속배선 적층 구조 및 그 제조 방법 |
JP7182970B2 (ja) * | 2018-09-20 | 2022-12-05 | 東京エレクトロン株式会社 | 埋め込み方法及び処理システム |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0794680A (ja) | 1993-09-22 | 1995-04-07 | Fujitsu Ltd | 半導体装置の製造方法 |
KR0172772B1 (ko) * | 1995-05-17 | 1999-03-30 | 김주용 | 반도체 장치의 확산장벽용 산화루테늄막 형성 방법 |
JP3676004B2 (ja) * | 1996-11-28 | 2005-07-27 | 富士通株式会社 | 酸化ルテニウム膜の形成方法および半導体装置の製造方法 |
JP3905977B2 (ja) * | 1998-05-22 | 2007-04-18 | 株式会社東芝 | 半導体装置の製造方法 |
JPH11354751A (ja) * | 1998-06-04 | 1999-12-24 | Toshiba Corp | 半導体装置,半導体装置の製造方法および半導体製造装置 |
US6180164B1 (en) * | 1998-10-26 | 2001-01-30 | Delco Electronics Corporation | Method of forming ruthenium-based thick-film resistors |
KR100389913B1 (ko) * | 1999-12-23 | 2003-07-04 | 삼성전자주식회사 | 공정조건을 변화시키면서 화학기상 증착법으로 루테늄막을형성하는 방법 및 그에 의해 형성된 루테늄막 |
JP3976462B2 (ja) * | 2000-01-26 | 2007-09-19 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
US6380080B2 (en) * | 2000-03-08 | 2002-04-30 | Micron Technology, Inc. | Methods for preparing ruthenium metal films |
-
2001
- 2001-01-31 JP JP2001024360A patent/JP4034518B2/ja not_active Expired - Lifetime
- 2001-03-08 KR KR1020010011966A patent/KR100769513B1/ko active IP Right Grant
- 2001-03-15 TW TW090106101A patent/TW516125B/zh not_active IP Right Cessation
- 2001-03-29 US US09/819,653 patent/US6548404B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100434489B1 (ko) * | 2001-03-22 | 2004-06-05 | 삼성전자주식회사 | 루테늄 산화막 씨딩층을 포함하는 루테늄막 증착 방법 |
KR100443356B1 (ko) * | 2001-12-29 | 2004-08-09 | 주식회사 하이닉스반도체 | 루테늄막의 단원자층 증착법 |
US9269568B2 (en) | 2009-07-27 | 2016-02-23 | Wonik Ips Co., Ltd | Method of manufacturing semiconductor device using the same |
Also Published As
Publication number | Publication date |
---|---|
JP2001345285A (ja) | 2001-12-14 |
TW516125B (en) | 2003-01-01 |
US6548404B2 (en) | 2003-04-15 |
JP4034518B2 (ja) | 2008-01-16 |
KR100769513B1 (ko) | 2007-10-23 |
US20010026963A1 (en) | 2001-10-04 |
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