KR20000077028A - 반도체 메모리 장치용 리던던시 데이터 설정 방법 및 장치 - Google Patents

반도체 메모리 장치용 리던던시 데이터 설정 방법 및 장치 Download PDF

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Publication number
KR20000077028A
KR20000077028A KR1020000019520A KR20000019520A KR20000077028A KR 20000077028 A KR20000077028 A KR 20000077028A KR 1020000019520 A KR1020000019520 A KR 1020000019520A KR 20000019520 A KR20000019520 A KR 20000019520A KR 20000077028 A KR20000077028 A KR 20000077028A
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KR
South Korea
Prior art keywords
word line
word
address
replaced
data
Prior art date
Application number
KR1020000019520A
Other languages
English (en)
Korean (ko)
Inventor
후지타마모루
Original Assignee
카네코 히사시
닛뽄덴끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 카네코 히사시, 닛뽄덴끼 가부시끼가이샤 filed Critical 카네코 히사시
Publication of KR20000077028A publication Critical patent/KR20000077028A/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/787—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using a fuse hierarchy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Plural Heterocyclic Compounds (AREA)
KR1020000019520A 1999-04-15 2000-04-14 반도체 메모리 장치용 리던던시 데이터 설정 방법 및 장치 KR20000077028A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11108099A JP2000297078A (ja) 1999-04-15 1999-04-15 テトラゾール類金属塩の製造方法
JP??11?????1080 1999-04-15

Publications (1)

Publication Number Publication Date
KR20000077028A true KR20000077028A (ko) 2000-12-26

Family

ID=14475859

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000019520A KR20000077028A (ko) 1999-04-15 2000-04-14 반도체 메모리 장치용 리던던시 데이터 설정 방법 및 장치

Country Status (2)

Country Link
JP (1) JP2000297078A (ja)
KR (1) KR20000077028A (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1982969A1 (en) 2007-04-16 2008-10-22 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO A pyrotechnic colour composition
CN110330462B (zh) * 2019-08-07 2022-05-17 宁夏大学 一种5-甲基四唑含能金属配位化合物的制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0963295A (ja) * 1995-08-23 1997-03-07 Hitachi Ltd 半導体記憶装置
JPH10334690A (ja) * 1997-05-27 1998-12-18 Nec Corp 半導体記憶装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0963295A (ja) * 1995-08-23 1997-03-07 Hitachi Ltd 半導体記憶装置
JPH10334690A (ja) * 1997-05-27 1998-12-18 Nec Corp 半導体記憶装置

Also Published As

Publication number Publication date
JP2000297078A (ja) 2000-10-24

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