KR20000076647A - 주사 노광방법 및 주사형 노광장치 - Google Patents
주사 노광방법 및 주사형 노광장치 Download PDFInfo
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- KR20000076647A KR20000076647A KR1020000006508A KR20000006508A KR20000076647A KR 20000076647 A KR20000076647 A KR 20000076647A KR 1020000006508 A KR1020000006508 A KR 1020000006508A KR 20000006508 A KR20000006508 A KR 20000006508A KR 20000076647 A KR20000076647 A KR 20000076647A
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- South Korea
- Prior art keywords
- pattern
- mask
- substrate
- scanning exposure
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (9)
- 마스크와 기판을 동기이동하여 상기 기판에 제 1 패턴과 제 2 패턴을 연결시켜서 노광하는 주사 노광방법에 있어서,상기 제 1 패턴의 적어도 일부와 제 2 패턴의 적어도 일부와는 공통의 패턴이고,상기 마스크에는 상기 제 1 패턴과 상기 제 2 패턴으로서, 상기 공통패턴과 그 공통패턴과는 다른 비공통패턴이 형성되어 있고,상기 공통패턴에 의해 제 1 패턴과 제 2 패턴을 연결시키는 것을 특징으로 하는 주사 노광방법.
- 제 1 항에 있어서,상기 제 1 패턴과 상기 제 2 패턴을, 상기 공통패턴의 일부를 중복하여 연결시키는 것을 특징으로 하는 주사 노광방법.
- 제 1 항 또는 제 2 항에 있어서,상기 노광은 상기 동기이동과 직교하는 방향으로 병렬하는 복수의 광학계에 의해 실시되는 것을 특징으로 하는 주사 노광방법.
- 제 3 항에 있어서,상기 복수의 광학계마다 노광광의 조도를 계측하고, 상기 동기이동마다 상기 조도를 보정하는 것을 특징으로 하는 주사 노광방법.
- 제 4 항에 있어서,투영영역이 중복하는 상기 광로의 조도가 대략 동일하게 되도록 상기 조도를 보정하는 것을 특징으로 하는 주사 노광방법.
- 제 3 항 내지 제 5 항 중 어느 한 항에 있어서,상기 복수의 광학계 중에서 소정의 광학계의 광로를 차광하는 것을 특징으로 하는 주사 노광방법.
- 제 3 항 내지 제 6 항 중 어느 한 항에 있어서,상기 복수의 광학계 중에서 내측의 광학계를 통한 노광광을 사용하여 상기 제 1 패턴과 상기 제 2 패턴을 연결시키는 것을 특징으로 하는 주사 노광방법.
- 제 1 항 내지 제 7 항 중 어느 한 항에 있어서,상기 공통패턴은 거의 동일한 부분패턴을 복수 가지며,상기 제 2 패턴을 노광하기 전에 상기 마스크를 상기 부분패턴의 배열간격에 기초하여 상기 기판에 대해 상기 동기이동과 직교하는 방향으로 이동시키는 것을 특징으로 하는 주사 노광방법.
- 마스크를 유지하는 마스크스테이지와 기판을 유지하는 기판스테이지를 구비하고, 상기 마스크스테이지와 상기 기판스테이지를 광로에 대해 동기이동시켜 상기 기판에 제 1 패턴과 제 2 패턴을 연결시켜서 노광하는 주사형 노광장치에 있어서,상기 마스크에는 상기 제 1 패턴의 적어도 일부 및 상기 제 2 패턴의 적어도 일부에 공통하는 공통패턴과 그 공통패턴과는 다른 비공통패턴이 형성되고,상기 제 1 패턴과 상기 제 2 패턴을 상기 공통패턴으로 연결시키도록 상기 마스크스테이지 및 상기 기판스테이지의 이동을 제어하는 제어장치를 구비하는 것을 특징으로 하는 주사형 노광장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3499399 | 1999-02-12 | ||
JP99-34993 | 1999-02-12 |
Publications (2)
Publication Number | Publication Date |
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KR20000076647A true KR20000076647A (ko) | 2000-12-26 |
KR100696151B1 KR100696151B1 (ko) | 2007-03-20 |
Family
ID=12429678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000006508A KR100696151B1 (ko) | 1999-02-12 | 2000-02-11 | 주사 노광방법 및 주사형 노광장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6288772B1 (ko) |
KR (1) | KR100696151B1 (ko) |
SG (1) | SG87085A1 (ko) |
TW (1) | TW447009B (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100849870B1 (ko) * | 2000-02-02 | 2008-08-01 | 가부시키가이샤 니콘 | 주사노광방법 및 주사형 노광장치 |
KR101016577B1 (ko) * | 2004-03-13 | 2011-02-22 | 삼성전자주식회사 | 노광 장치 및 방법 |
Families Citing this family (15)
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TW396395B (en) * | 1998-01-07 | 2000-07-01 | Nikon Corp | Exposure method and scanning-type aligner |
KR100575230B1 (ko) * | 2002-12-28 | 2006-05-02 | 엘지.필립스 엘시디 주식회사 | 노광 장치를 이용한 노광 방법 |
JP4280509B2 (ja) * | 2003-01-31 | 2009-06-17 | キヤノン株式会社 | 投影露光用マスク、投影露光用マスクの製造方法、投影露光装置および投影露光方法 |
JP3689698B2 (ja) * | 2003-01-31 | 2005-08-31 | キヤノン株式会社 | 投影露光装置、投影露光方法および被露光部材の製造方法 |
EP1482373A1 (en) * | 2003-05-30 | 2004-12-01 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006072100A (ja) * | 2004-09-03 | 2006-03-16 | Adtec Engineeng Co Ltd | 投影露光装置 |
US8547526B2 (en) * | 2009-04-07 | 2013-10-01 | Micron Technology, Inc. | Photolithography systems and associated methods of selective die exposure |
JP5760293B2 (ja) * | 2011-03-02 | 2015-08-05 | 株式会社ブイ・テクノロジー | 露光装置 |
US8957512B2 (en) | 2012-06-19 | 2015-02-17 | Xilinx, Inc. | Oversized interposer |
US8869088B1 (en) | 2012-06-27 | 2014-10-21 | Xilinx, Inc. | Oversized interposer formed from a multi-pattern region mask |
US9026872B2 (en) | 2012-08-16 | 2015-05-05 | Xilinx, Inc. | Flexible sized die for use in multi-die integrated circuit |
US9547034B2 (en) | 2013-07-03 | 2017-01-17 | Xilinx, Inc. | Monolithic integrated circuit die having modular die regions stitched together |
US9229332B2 (en) * | 2013-09-18 | 2016-01-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Systems and methods for high-throughput and small-footprint scanning exposure for lithography |
US9915869B1 (en) | 2014-07-01 | 2018-03-13 | Xilinx, Inc. | Single mask set used for interposer fabrication of multiple products |
CN107450271B (zh) * | 2016-05-31 | 2019-10-25 | 上海微电子装备(集团)股份有限公司 | 光刻机刀口组、大视场光刻机和曝光方法 |
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2000
- 2000-01-18 TW TW089100706A patent/TW447009B/zh not_active IP Right Cessation
- 2000-02-09 US US09/500,489 patent/US6288772B1/en not_active Expired - Lifetime
- 2000-02-10 SG SG200000767A patent/SG87085A1/en unknown
- 2000-02-11 KR KR1020000006508A patent/KR100696151B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100849870B1 (ko) * | 2000-02-02 | 2008-08-01 | 가부시키가이샤 니콘 | 주사노광방법 및 주사형 노광장치 |
KR101016577B1 (ko) * | 2004-03-13 | 2011-02-22 | 삼성전자주식회사 | 노광 장치 및 방법 |
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Publication number | Publication date |
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TW447009B (en) | 2001-07-21 |
KR100696151B1 (ko) | 2007-03-20 |
US6288772B1 (en) | 2001-09-11 |
SG87085A1 (en) | 2002-03-19 |
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