KR20000039697A - 배선 형성 방법 - Google Patents
배선 형성 방법 Download PDFInfo
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- KR20000039697A KR20000039697A KR1019980055106A KR19980055106A KR20000039697A KR 20000039697 A KR20000039697 A KR 20000039697A KR 1019980055106 A KR1019980055106 A KR 1019980055106A KR 19980055106 A KR19980055106 A KR 19980055106A KR 20000039697 A KR20000039697 A KR 20000039697A
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- South Korea
- Prior art keywords
- metal
- plasma
- oxygen
- plug
- forming
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 56
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 96
- 239000002184 metal Substances 0.000 claims abstract description 96
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000001301 oxygen Substances 0.000 claims abstract description 33
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 33
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 30
- 238000004140 cleaning Methods 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000012670 alkaline solution Substances 0.000 claims abstract description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 23
- 229910052721 tungsten Inorganic materials 0.000 claims description 23
- 239000010937 tungsten Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 238000005260 corrosion Methods 0.000 claims description 13
- 230000007797 corrosion Effects 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 abstract description 7
- 230000003628 erosive effect Effects 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 2
- 230000008030 elimination Effects 0.000 abstract 1
- 238000003379 elimination reaction Methods 0.000 abstract 1
- 230000002265 prevention Effects 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (15)
- 금속 플러그를 포함하는 절연막 상에 적용되어 배선을 형성하는 방법에 있어서:상기 절연막 상에 금속막을 형성하는 단계와;상기 금속막의 범위를 정의함에 의해서 금속 라인을 형성하는 포토레지스트막을 제공하는 단계; 그리고전하들이 상기 금속 플러그 표면에 축적되는 것을 방지하기 위해 산소 플라즈마는 산소를 희석하기 위한 수분을 가지되,상기 산소 플라즈마에 의해 상기 포토레지스트막을 제거하는 단계를 포함하는 것을 특징으로 하는 배선 형성 방법.
- 제 1 항에 있어서,수분 대 산소의 비율이 약 1:1인 것을 특징으로 하는 배선 형성 방법.
- 제 1 항에 있어서,수분의 비율이 산소의 비율 보다 높은 것을 특징으로 하는 배선 형성 방법.
- 배선을 형성하는 방법에 있어서:금속 플러그를 가지는 반도체 기판이 제공되는 단계와;상기 반도체 기판 위에 금속막을 형성하는 단계와;상기 금속막으로부터 금속 라인을 정의하고 상기 금속 플러그의 일부분을 노출시키도록 상기 금속막 상에 포토레지스트막을 형성하는 단계와;상기 포토레지스트막을 제거하기 위해 산소 플라즈마에 수분을 첨가하는 단계; 그리고상기 반도체 기판에 대한 습식 세정 공정을 수행하는 단계를 포함하는 것을 특징으로 하는 배선 형성 방법.
- 제 4 항에 있어서,상기 금속 플러그의 재료에 텅스텐이 포함되는 것을 특징으로 하는 배선 형성 방법.
- 제 4 항에 있어서,상기 금속 플러그의 재료에 알루미늄이 포함되는 것을 특징으로 하는 배선 형성 방법.
- 제 4 항에 있어서,수분 대 산소의 비율이 약 1:1인 것을 특징으로 하는 배선 형성 방법.
- 제 4 항에 있어서,수분의 비율이 산소의 비율 보다 높은 것을 특징으로 하는 배선 형성 방법.
- 제 4 항에 있어서,상기 습식 세정 공정이 알칼리성 용액을 사용해서 수행되는 것을 특징으로 하는 배선 형성 방법.
- 텅스텐 플러그를 포함하는 반도체 기판에 적용되어 상기 텅스텐 플러그의 부식 없이 배선을 형성하는 방법에 있어서:산소와 수분을 1: 1의 비율로 포함하는 플라즈마에 의해서 상기 반도체 기판 상의 금속 라인을 정의하는데 사용되는 상기 포토레지스트막을 제거하는 단계를 포함하는 것을 특징으로 하는 배선 형성 방법.
- 텅스텐 플러그를 가지는 반도체 기판에 적용되며,수분의 농도가 상기 산소의 농도 보다 높은 산소와 수분을 포함하는 플라즈마에 의해서 상기 반도체 기판 상의 금속 라인을 정의하는데 사용되는 포토레지스트막을 제거하는 단계를 포함하되,상기 텅스텐 플러그의 부식 없이 배선을 형성하는 단계를 포함하는 것을 특징으로 하는 배선 형성 방법.
- 텅스텐 플러그를 가지는 절연막에 적용되어 배선을 형성하는 방법에 있어서:상기 절연막 상에 금속막을 형성하는 단계와;상기 금속막의 범위를 정의함에 의해서 금속 라인을 형성하는 포토레지스트막을 제공하는 단계와;산소를 포함하는 플라즈마에 의해서 상기 포토레지스트막을 제거하는 단계; 그리고순수 수증기 플라즈마를 제공하는 단계를 포함하는 것을 특징으로 하는 배선 형성 방법.
- 제 12 항에 있어서,상기 플라즈마는 순수 산소 플라즈마를 포함하는 것을 특징으로 하는 배선 형성 방법.
- 제 12 항에 있어서,상기 순수 수증기 플라즈마의 흐름은 약 300-500 sccm이고,상기 순수 수증기 플라즈마는 약 20-30 초 주기로 제공되는 것을 특징으로 하는 배선 형성 방법.
- 텅스텐 플러그의 부식 없이 배선을 형성하는 방법에 있어서:상기 플라즈마는 300-500 sccm의 속도와 20-30초의 주기를 가지는 산소 플라즈마와 순수 수증기 플라즈마를 포함하되,상기 플라즈마에 의해서 상기 반도체 기판 상의 금속 라인을 정의하기 위해 사용되는 포토레지스트막을 포함하는 것을 특징으로 하는 배선 형성 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-1998-0055106A KR100452071B1 (ko) | 1998-12-15 | 1998-12-15 | 배선형성방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-1998-0055106A KR100452071B1 (ko) | 1998-12-15 | 1998-12-15 | 배선형성방법 |
Publications (2)
Publication Number | Publication Date |
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KR20000039697A true KR20000039697A (ko) | 2000-07-05 |
KR100452071B1 KR100452071B1 (ko) | 2004-12-08 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR10-1998-0055106A KR100452071B1 (ko) | 1998-12-15 | 1998-12-15 | 배선형성방법 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100403319B1 (ko) * | 2001-12-20 | 2003-10-30 | 주식회사 하이닉스반도체 | 반도체 소자의 테스트 패턴 형성 방법 |
KR100421279B1 (ko) * | 2001-06-28 | 2004-03-09 | 주식회사 하이닉스반도체 | 금속 배선 형성 방법 |
-
1998
- 1998-12-15 KR KR10-1998-0055106A patent/KR100452071B1/ko not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100421279B1 (ko) * | 2001-06-28 | 2004-03-09 | 주식회사 하이닉스반도체 | 금속 배선 형성 방법 |
KR100403319B1 (ko) * | 2001-12-20 | 2003-10-30 | 주식회사 하이닉스반도체 | 반도체 소자의 테스트 패턴 형성 방법 |
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Publication number | Publication date |
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KR100452071B1 (ko) | 2004-12-08 |
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