KR19990062687A - 불화칼슘 결정의 제조방법 및 원료의 처리방법 - Google Patents
불화칼슘 결정의 제조방법 및 원료의 처리방법 Download PDFInfo
- Publication number
- KR19990062687A KR19990062687A KR1019980052211A KR19980052211A KR19990062687A KR 19990062687 A KR19990062687 A KR 19990062687A KR 1019980052211 A KR1019980052211 A KR 1019980052211A KR 19980052211 A KR19980052211 A KR 19980052211A KR 19990062687 A KR19990062687 A KR 19990062687A
- Authority
- KR
- South Korea
- Prior art keywords
- furnace
- calcium fluoride
- raw material
- pretreatment
- powder
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Drying Of Solid Materials (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Abstract
Description
불순물가스종류 | 실시예(탈가스 처리) | 비교예1(탈가스 미처리) | 비교예2(탈가스 미처리) |
H2O | 미검출 | 검출 | 미검출 |
O2 | 미검출 | 검출 | 검출 |
CO | 미검출 | 검출 | 검출 |
CO2 | 미검출 | 검출 | 검출 |
Claims (9)
- 원료표면의 흡착가스를 탈리시키는 탈가스 처리공정과,상기 탈가스된 원료를 노내에서 용융하여 전처리품을 얻는 전처리공정과,상기 전처리된 원료를 노내에서 재용융하여 결정을 육성하는 육성공정,을 포함하는 불화칼슘결정의 제조방법.
- 노내에 충전된 원료를, 진공가열노내에서 임의로 설정한 보지시간으로 가열함으로써 원료표면의 흡착가스를 탈리시키는 탈가스처리공정과,상기 탈가스된 원료를 진공가열로내에서 탈산소화 반응시켜 반응물을 얻고, 불화칼슘의 융점이상의 온도에서 상기 반응물을 용융시킨 후, 서서히 결정화시켜 전처리품을 얻는 전처리 공정과,상기 전처리품을 노내에서 충전하고, 불화칼슘의 융점 이상의 온도에서 용융한 후, 노를 뒤로 물려, 상기 전처리품을 노의 하부로부터 서서히 결정화시켜 불화칼슘결정을 얻는 육성공정,을 포함하는 불화칼슘결정의 제조방법.
- 청구항 1 또는 청구항 2에 기재된 불화칼슘결정의 제조방법에 있어서,상기 원료는, 불화칼슘분말원료, 또는 불화칼슘분말원료와 스캐빈저와의 혼합물인 것을 특징으로 하는 불화칼슘결정의 제조방법.
- 청구항 1 또는 청구항 2에 기재된 불화칼슘결정의 제조방법에 있어서, 탈가스처리공정에 있어서 사용되는 노의 뚜껑이 다공질체인 것을 특징으로 하는 불화칼슘결정의 제조방법.
- 청구항 1 또는 청구항 2에 기재된 불화칼슘 결정의 제조방법에 있어서, 탈가스처리공정에 있어서, 선반을 이용하여 복수개의 노를 설치하여 처리하는 것을 특징으로 하는 불화칼슘 결정의 제조방법.
- 청구항 1 또는 청구항 2에 기재된 불화칼슘 결정의 제조방법에 있어서,전처리공정에 있어서 사용되는 노가, 복수의 노를 상하로 조합한 다단계 노인 것을 특징으로 하는 불화칼슘 결정의 제조방법.
- 노내에 충전된 불화칼슘 분말을 포함하는 원료를, 진공가열로에서 임의로 설정한 보지시간 및 보지온도로 가열함으로써, 원료표면의 흡착가스를 탈리시키는 것을 특징으로 하는 불화칼슘 원료의 처리방법.
- 청구항 7에 기재된 불화칼슘 원료의 처리방법에 있어서,상기 보지온도가 700℃ 이상 1350℃이하인 것을 특징으로 하는 불화칼슘 원료의 처리방법.
- 청구항 7에 기재된 불화칼슘 원료의 처리방법에 있어서,상기 보지시간이 24시간 이상 96시간이하인 것을 특징으로 하는 불화칼슘 원료의 처리방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP330669/1997 | 1997-12-01 | ||
JP33066997A JP4154744B2 (ja) | 1997-12-01 | 1997-12-01 | フッ化カルシウム結晶の製造方法および原料の処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990062687A true KR19990062687A (ko) | 1999-07-26 |
KR100552130B1 KR100552130B1 (ko) | 2006-05-09 |
Family
ID=18235266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980052211A KR100552130B1 (ko) | 1997-12-01 | 1998-12-01 | 불화칼슘결정의제조방법및원료의처리방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6123764A (ko) |
EP (1) | EP0919646B2 (ko) |
JP (1) | JP4154744B2 (ko) |
KR (1) | KR100552130B1 (ko) |
CN (1) | CN1116231C (ko) |
DE (1) | DE69804411T3 (ko) |
Families Citing this family (27)
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DE10010484A1 (de) | 2000-03-03 | 2001-09-13 | Schott Glas | Verfahren und Vorrichtung zur Züchtung von großvolumigen orientierten Einkristallen |
JP3631063B2 (ja) * | 1998-10-21 | 2005-03-23 | キヤノン株式会社 | フッ化物の精製方法及びフッ化物結晶の製造方法 |
EP1022362B1 (en) * | 1999-01-20 | 2006-03-01 | Canon Kabushiki Kaisha | Process for producing crystal article |
FR2799194B1 (fr) * | 1999-10-05 | 2001-12-14 | Corning Sa | Billes d'un fluorure d'alcalin ou d'alcalino-terreux polycristallin, leur preparation et leur utilisation pour preparer des monocristaux |
US6277351B1 (en) * | 2000-03-20 | 2001-08-21 | Carl Francis Swinehart | Crucible for growing macrocrystals |
US6423136B1 (en) | 2000-03-20 | 2002-07-23 | Carl Francis Swinehart | Crucible for growing macrocrystals |
FR2806743B1 (fr) * | 2000-03-24 | 2002-06-28 | Corning Inc | PROCEDE ET DISPOSITIF DE CROISSANCE DE MONOCRISTAUX, NOTAMMENT DE CaF2 |
EP1154046B1 (en) | 2000-05-09 | 2011-12-28 | Hellma Materials GmbH & Co. KG | Fluoride crystalline optical lithography lens element blank |
JP2002255686A (ja) * | 2001-02-26 | 2002-09-11 | Canon Inc | 弗化カルシウム結晶、その製造方法及び装置 |
JP4906018B2 (ja) * | 2001-03-12 | 2012-03-28 | 株式会社半導体エネルギー研究所 | 成膜方法、発光装置の作製方法及び成膜装置 |
FR2822853B1 (fr) * | 2001-03-29 | 2003-06-27 | Corning Inc | Preaparation de (mono) cristaux |
RU2001111055A (ru) * | 2001-04-16 | 2003-04-10 | Репкина Тать на Александровна | Многосекционный контейнер для выращивания монокристаллов фторида кальция |
DE10142651C5 (de) * | 2001-08-31 | 2009-04-23 | Schott Ag | Verfahren zur Herstellung von hoch homogenen strahlenbeständigen streufreien Einkristallen, eines damit erhaltenen Ingots sowie deren Verwendung |
EP1577956A1 (en) * | 2002-12-25 | 2005-09-21 | Japan Science and Technology Agency | Light emitting element device, light receiving element device, optical apparatus, fluoride crystal, process for producing fluoride crystal and crucible |
JP2005015264A (ja) * | 2003-06-25 | 2005-01-20 | Canon Inc | 結晶製造装置及び方法 |
JP5000253B2 (ja) * | 2006-09-29 | 2012-08-15 | 株式会社トクヤマ | 円環状フッ化金属多結晶体 |
EP2039676A1 (en) | 2007-09-19 | 2009-03-25 | Huntsman International Llc | Process for the production of di-and polyamines of the diphenylmethane series |
US8252208B2 (en) | 2008-10-31 | 2012-08-28 | Corning Incorporated | Calcium fluoride optics with improved laser durability |
US8986572B2 (en) | 2009-10-21 | 2015-03-24 | Corning Incorporated | Calcium fluoride optics with improved laser durability |
DE102010044017B4 (de) | 2010-11-17 | 2013-06-20 | Carl Zeiss Smt Gmbh | Verfahren zur Herstellung von Alkali- oder Erdalkalifluorid-Kristallen und nach dem Verfahren hergestellte Kristalle |
WO2016053864A1 (en) * | 2014-09-29 | 2016-04-07 | Saint-Gobain Ceramics & Plastics, Inc. | Method of including deadsorption and crystal growth |
CN104357903B (zh) * | 2014-10-24 | 2017-07-28 | 北京首量科技股份有限公司 | 一种含铕的氟化钙晶体、制备方法及用途 |
CN104294362A (zh) * | 2014-10-31 | 2015-01-21 | 秦皇岛本征晶体科技有限公司 | 大尺寸方形氟化钙晶体的制备方法 |
CN106839763B (zh) * | 2016-12-30 | 2018-10-30 | 重庆市河海碳素制品有限公司 | 防烟的碳刷烧结装置 |
CN109252208A (zh) * | 2018-10-15 | 2019-01-22 | 江苏万邦微电子有限公司 | 一种抗辐照氟化铈晶体的制作方法 |
CN114956146B (zh) * | 2022-06-02 | 2023-08-11 | 中南大学 | 一种含氟废渣的预处理方法以及氟化钙的回收方法 |
CN117205838B (zh) * | 2023-11-07 | 2024-01-23 | 通威微电子有限公司 | 碳化硅粉料合成装置及碳化硅粉料 |
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US2149076A (en) † | 1935-10-18 | 1939-02-28 | Massachusetts Inst Technology | Method for the manufacture of crystalline bodies |
US2214976A (en) † | 1939-01-05 | 1940-09-17 | Research Corp | Apparatus for the manufacture of crystalline bodies |
US2498186A (en) † | 1944-12-28 | 1950-02-21 | Research Corp | Purification of certain alkaline earth halides and crystal products thereof |
US3282641A (en) * | 1963-10-09 | 1966-11-01 | Harshaw Chem Corp | Scavenger and process for purification of metal fluorides |
US3649552A (en) * | 1967-03-31 | 1972-03-14 | Hughes Aircraft Co | Method for preparing high quality rare earth and alkaline earth fluoride single crystals |
US3981818A (en) * | 1971-10-26 | 1976-09-21 | The Harshaw Chemical Company | Crystalline materials |
US3926566A (en) * | 1973-05-18 | 1975-12-16 | Bicron Corp | Processing alkali metal halide salts for growing into crystals in accordance with stockbarger process |
US4076574A (en) * | 1975-12-29 | 1978-02-28 | Hughes Aircraft Company | Reactive atmosphere crystal growth method |
US4030965A (en) * | 1976-06-09 | 1977-06-21 | The Harshaw Chemical Company | Crystal growth procedure |
DD213514A1 (de) † | 1978-11-30 | 1984-09-12 | Zeiss Jena Veb Carl | Verfahren zur herstellung von calciumfluorid-einkristallen fuer optische zwecke |
US4379733A (en) * | 1981-10-02 | 1983-04-12 | Hughes Aircraft Company | Bicameral mode crystal growth apparatus and process |
JP3006148B2 (ja) * | 1991-05-23 | 2000-02-07 | 株式会社ニコン | 耐エキシマ性に優れた蛍石の製造装置 |
JP3083952B2 (ja) * | 1994-04-07 | 2000-09-04 | 株式会社ニコン | 耐紫外線性の優れた紫外線光学用蛍石及び蛍石の透過率検査方法 |
JP3957782B2 (ja) * | 1996-03-22 | 2007-08-15 | キヤノン株式会社 | 蛍石及びその製造方法並びに露光装置 |
JP3707750B2 (ja) * | 1996-05-30 | 2005-10-19 | 株式会社ニコン | フッ化カルシウム結晶の製造方法 |
JP3765329B2 (ja) * | 1996-06-14 | 2006-04-12 | 株式会社ニコン | フッ化カルシウム結晶、その製造方法 及びこれを用いた投影露光装置 |
JP3661291B2 (ja) * | 1996-08-01 | 2005-06-15 | 株式会社ニコン | 露光装置 |
JP3337638B2 (ja) * | 1997-03-31 | 2002-10-21 | キヤノン株式会社 | フッ化物結晶の製造方法及び光学部品の製造方法 |
-
1997
- 1997-12-01 JP JP33066997A patent/JP4154744B2/ja not_active Expired - Lifetime
-
1998
- 1998-12-01 CN CN98123370A patent/CN1116231C/zh not_active Expired - Lifetime
- 1998-12-01 EP EP98122797A patent/EP0919646B2/en not_active Expired - Lifetime
- 1998-12-01 KR KR1019980052211A patent/KR100552130B1/ko not_active IP Right Cessation
- 1998-12-01 US US09/201,802 patent/US6123764A/en not_active Expired - Lifetime
- 1998-12-01 DE DE69804411T patent/DE69804411T3/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1224695A (zh) | 1999-08-04 |
JP4154744B2 (ja) | 2008-09-24 |
DE69804411T3 (de) | 2007-04-19 |
DE69804411D1 (de) | 2002-05-02 |
US6123764A (en) | 2000-09-26 |
EP0919646A1 (en) | 1999-06-02 |
KR100552130B1 (ko) | 2006-05-09 |
DE69804411T2 (de) | 2002-11-14 |
EP0919646B1 (en) | 2002-03-27 |
EP0919646B2 (en) | 2006-04-05 |
CN1116231C (zh) | 2003-07-30 |
JPH11157982A (ja) | 1999-06-15 |
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