KR19990036191A - 개선된 일렉트로마이그레이션 신뢰도를 갖춘 집적회로용 금속상호접속 구조체 - Google Patents

개선된 일렉트로마이그레이션 신뢰도를 갖춘 집적회로용 금속상호접속 구조체 Download PDF

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Publication number
KR19990036191A
KR19990036191A KR1019980700859A KR19980700859A KR19990036191A KR 19990036191 A KR19990036191 A KR 19990036191A KR 1019980700859 A KR1019980700859 A KR 1019980700859A KR 19980700859 A KR19980700859 A KR 19980700859A KR 19990036191 A KR19990036191 A KR 19990036191A
Authority
KR
South Korea
Prior art keywords
layer
aluminum alloy
interconnect structure
titanium
titanium nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019980700859A
Other languages
English (en)
Korean (ko)
Inventor
페이-잉 폴 리
베른드 엠 볼메르
대릴 레스타이노
빌 클라센
Original Assignee
포만 제프리 엘
인터내셔널 비지네스 머신즈 코포레이션
디어터 크리스트, 베르너 뵈켈
지멘스 악티엔게젤샤프트
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Filing date
Publication date
Application filed by 포만 제프리 엘, 인터내셔널 비지네스 머신즈 코포레이션, 디어터 크리스트, 베르너 뵈켈, 지멘스 악티엔게젤샤프트 filed Critical 포만 제프리 엘
Publication of KR19990036191A publication Critical patent/KR19990036191A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019980700859A 1995-08-10 1996-08-01 개선된 일렉트로마이그레이션 신뢰도를 갖춘 집적회로용 금속상호접속 구조체 Ceased KR19990036191A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/513,494 US5641992A (en) 1995-08-10 1995-08-10 Metal interconnect structure for an integrated circuit with improved electromigration reliability
US8/513,494 1995-08-10

Publications (1)

Publication Number Publication Date
KR19990036191A true KR19990036191A (ko) 1999-05-25

Family

ID=24043525

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980700859A Ceased KR19990036191A (ko) 1995-08-10 1996-08-01 개선된 일렉트로마이그레이션 신뢰도를 갖춘 집적회로용 금속상호접속 구조체

Country Status (6)

Country Link
US (2) US5641992A (enExample)
EP (1) EP0843895B1 (enExample)
JP (1) JP2000501882A (enExample)
KR (1) KR19990036191A (enExample)
DE (1) DE69624712T2 (enExample)
WO (1) WO1997006562A1 (enExample)

Cited By (1)

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KR100650904B1 (ko) * 2005-12-29 2006-11-28 동부일렉트로닉스 주식회사 알루미늄 배선 형성 방법

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US5994217A (en) * 1996-12-16 1999-11-30 Chartered Semiconductor Manufacturing Ltd. Post metallization stress relief annealing heat treatment for ARC TiN over aluminum layers
US5943601A (en) * 1997-04-30 1999-08-24 International Business Machines Corporation Process for fabricating a metallization structure
US5891802A (en) * 1997-07-23 1999-04-06 Advanced Micro Devices, Inc. Method for fabricating a metallization stack structure to improve electromigration resistance and keep low resistivity of ULSI interconnects
US5942799A (en) * 1997-11-20 1999-08-24 Novellus Systems, Inc. Multilayer diffusion barriers
KR100249047B1 (ko) 1997-12-12 2000-03-15 윤종용 반도체 소자 및 그 제조 방법
FR2774811B1 (fr) * 1998-02-10 2003-05-09 Sgs Thomson Microelectronics Procede de formation de lignes conductrices sur des circuits integres
US5994219A (en) * 1998-06-04 1999-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Add one process step to control the SI distribution of Alsicu to improved metal residue process window
TW439204B (en) * 1998-09-18 2001-06-07 Ibm Improved-reliability damascene interconnects and process of manufacture
JP2000150520A (ja) * 1998-11-10 2000-05-30 Internatl Business Mach Corp <Ibm> 相互接続部、及び相互接続部の製造方法
US6777810B2 (en) * 1999-02-19 2004-08-17 Intel Corporation Interconnection alloy for integrated circuits
US6352620B2 (en) 1999-06-28 2002-03-05 Applied Materials, Inc. Staged aluminum deposition process for filling vias
US6433429B1 (en) * 1999-09-01 2002-08-13 International Business Machines Corporation Copper conductive line with redundant liner and method of making
US6534404B1 (en) 1999-11-24 2003-03-18 Novellus Systems, Inc. Method of depositing diffusion barrier for copper interconnect in integrated circuit
AU2003303784A1 (en) * 2003-01-20 2004-08-13 Systems On Silicon Manufacturing Company Pte Ltd Titanium underlayer for lines in semiconductor devices
JP2004266039A (ja) * 2003-02-28 2004-09-24 Shin Etsu Handotai Co Ltd 発光素子及び発光素子の製造方法
US20040207093A1 (en) * 2003-04-17 2004-10-21 Sey-Shing Sun Method of fabricating an alloy cap layer over CU wires to improve electromigration performance of CU interconnects
US6882924B2 (en) * 2003-05-05 2005-04-19 Precision Engine Controls Corp. Valve flow control system and method
US7096450B2 (en) 2003-06-28 2006-08-22 International Business Machines Corporation Enhancement of performance of a conductive wire in a multilayered substrate
KR100536808B1 (ko) * 2004-06-09 2005-12-14 동부아남반도체 주식회사 반도체 소자 및 그 제조 방법
US7339274B2 (en) * 2004-08-17 2008-03-04 Agere Systems Inc. Metallization performance in electronic devices
US20090120785A1 (en) * 2005-12-26 2009-05-14 United Microelectronics Corp. Method for forming metal film or stacked layer including metal film with reduced surface roughness
US20070144892A1 (en) * 2005-12-26 2007-06-28 Hui-Shen Shih Method for forming metal film or stacked layer including metal film with reduced surface roughness
US8003536B2 (en) * 2009-03-18 2011-08-23 International Business Machines Corporation Electromigration resistant aluminum-based metal interconnect structure
CN102157356B (zh) * 2011-03-15 2015-10-07 上海华虹宏力半导体制造有限公司 金属-绝缘体-金属半导体器件的下电极的制备方法
US9851506B2 (en) * 2015-06-04 2017-12-26 Elenion Technologies, Llc Back end of line process integrated optical device fabrication

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US4926237A (en) * 1988-04-04 1990-05-15 Motorola, Inc. Device metallization, device and method
US4998157A (en) * 1988-08-06 1991-03-05 Seiko Epson Corporation Ohmic contact to silicon substrate
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US5478780A (en) * 1990-03-30 1995-12-26 Siemens Aktiengesellschaft Method and apparatus for producing conductive layers or structures for VLSI circuits
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KR100650904B1 (ko) * 2005-12-29 2006-11-28 동부일렉트로닉스 주식회사 알루미늄 배선 형성 방법

Also Published As

Publication number Publication date
US5798301A (en) 1998-08-25
DE69624712T2 (de) 2003-09-11
WO1997006562A1 (en) 1997-02-20
JP2000501882A (ja) 2000-02-15
EP0843895B1 (en) 2002-11-06
EP0843895A1 (en) 1998-05-27
US5641992A (en) 1997-06-24
DE69624712D1 (de) 2002-12-12

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