KR19990004670A - Method of producing polysilicon film - Google Patents
Method of producing polysilicon film Download PDFInfo
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- KR19990004670A KR19990004670A KR1019970028806A KR19970028806A KR19990004670A KR 19990004670 A KR19990004670 A KR 19990004670A KR 1019970028806 A KR1019970028806 A KR 1019970028806A KR 19970028806 A KR19970028806 A KR 19970028806A KR 19990004670 A KR19990004670 A KR 19990004670A
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- polysilicon film
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- thin film
- atmosphere
- polycrystalline polysilicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- Manufacturing & Machinery (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
본 발명은 비정질의 기판 상에 다결정 폴리실리콘막을 형성하기 위하여, 공급 가스를 2단계로 분리 공급하고, 비정질 기판 상에 막의 성장시 성장핵이 되는 박막층을 형성하여 저온 공정으로 양질의 다결정 폴리실리콘막을 형성하여 공정 진행 시간 단축과 함께 생산 수율을 향상시키는 제조 방법을 제공한다.In order to form a polycrystalline polysilicon film on an amorphous substrate, the supply gas is separated and supplied in two stages, and a thin film layer which becomes a growth nucleus upon growth of the film is formed on the amorphous substrate to produce a high quality polycrystalline polysilicon film by a low temperature process. The present invention provides a manufacturing method for improving the production yield while forming a process.
따라서, 본 발명에 따른 비정질 실리콘 기판 상에 다결정 폴리실리콘막을 형성시키는 제조 방법에 있어서, 아르곤과 수소 가스가 공급되는 분위기 하에서 상기 비정질 실리콘 기판 상에 실리콘 박막을 형성하는 단계; 상기 아르곤 가스만이 공급되는 분위기 하에서 상기 실리콘 박막을 핵으로 하여 다결정 폴리실리콘막을 증착하는 저온 공정 단계를 포함하는 것을 특징으로 한다.Thus, a method of forming a polycrystalline polysilicon film on an amorphous silicon substrate according to the present invention, comprising the steps of: forming a silicon thin film on the amorphous silicon substrate under an atmosphere in which argon and hydrogen gas are supplied; And a low temperature process step of depositing a polycrystalline polysilicon film using the silicon thin film as a nucleus under an atmosphere in which only the argon gas is supplied.
Description
본 발명은 결정질의 폴리실리콘막의 형성 방법에 관한 것으로, 특히 비정질 기판 상에 결정질의 폴리실리콘막을 증착하는 폴리실리콘막의 제조 방법에 관한 것이다.The present invention relates to a method for forming a crystalline polysilicon film, and more particularly, to a method for producing a polysilicon film in which a crystalline polysilicon film is deposited on an amorphous substrate.
일반적으로, 다결정 폴리실리콘막은 비정질 실리콘막에 비해 높은 이동성(mobility)을 갖고 있기 때문에 박막 트랜지스터 액정 표시기의 채널층이나 전계 효과 트랜지스터의 게이트 전극이나 연결선 등으로 널리 사용되고 있다.In general, the polycrystalline polysilicon film has a higher mobility than the amorphous silicon film, and thus is widely used as a channel layer of a thin film transistor liquid crystal display, a gate electrode or a connecting line of a field effect transistor.
종래 박막 트랜지스터 액정 소자의 기판으로 사용되는 유리 기판 상에 다결정 폴리실리콘막을 형성하기 위해서는, 300℃이하의 저온에서 비정질 실리콘막을 형성한 후 이르곤(Ar)과 수소(H2) 가스의 공급 분위기 하에서 장시간 동안 열적 어닐링을 하거나 레이저 어닐링을하여 다결정 폴리실리콘막을 형성하였다.In order to form a polycrystalline polysilicon film on a glass substrate used as a substrate of a conventional thin film transistor liquid crystal device, an amorphous silicon film is formed at a low temperature of 300 ° C. or lower, and then under the supply atmosphere of Irgon (Ar) and hydrogen (H 2 ) gases. Thermal annealing or laser annealing for a long time to form a polycrystalline polysilicon film.
그러나, 상기의 공정을 생산에 적용할 경우 장시간의 공정이 요구되어 생산수율의 감소를 가져 오게 되고, 또한 막 형성 후 대기 중에 노출시 수분 흡수에 의한 막의 벗김(Peeling) 현상이 발생하여 양질의 소자를 얻을 수 없는 문제점이 있다.However, when the above process is applied to production, a long time process is required, resulting in a decrease in production yield, and a film peeling phenomenon occurs due to moisture absorption when exposed to air after film formation. There is a problem that can not be obtained.
따라서, 본 발명은 다결정 폴리실리콘막의 형성시 공급 가스를 2단계로 분리 공급하고, 또한 비정질 기판 상에 막의 성장시 성장핵이 되는 박막층을 형성하여 저온 공정으로 양질의 다결정 폴리실리콘막을 형성하여 공정 진행 시간 단축과 함께 생산 수율을 향상시키는 제조 방법을 제공하는데 그 목적이 있다.Therefore, the present invention separates and supplies the supply gas in two stages when forming the polycrystalline polysilicon film, and forms a thin film layer which becomes a growth nucleus upon growth of the film on an amorphous substrate to form a high quality polycrystalline polysilicon film by a low temperature process. It is an object of the present invention to provide a manufacturing method for improving the production yield with shortening of time.
상기 목적을 달성하기 위하여, 본 발명에 따른 비정질 실리콘 기판 상에 다결정 폴리실리콘막을 형성시키는 제조 방법에 있어서, 제 1공급 가스의 분위기 하에서 상기 비정질 실리콘 기판 상에 실리콘 박막을 증착하는 단계; 제 2공급 가스의 분위기 하에서 상기 실리콘 박막을 성장핵으로 하여 다결정 폴리실리콘막을 증착하는 저온 공정 단계를 포함하는 것을 특징으로 한다.In order to achieve the above object, a manufacturing method of forming a polycrystalline polysilicon film on an amorphous silicon substrate according to the present invention, comprising the steps of: depositing a silicon thin film on the amorphous silicon substrate in the atmosphere of a first supply gas; And a low temperature process step of depositing a polycrystalline polysilicon film using the silicon thin film as a growth nucleus under an atmosphere of a second supply gas.
[실시예]EXAMPLE
박막 트랜지스터 액정 소자의 채널층으로 사용되는 다결정 실리콘막을 비정질 유리 기판 상에 형성하기 위하여, 먼저 아르곤과 수소 가스가 공급되는 분위기에서 라디오-주파수 스퍼터링(RF Sputtering) 장비를 사용하여 수 나노미터(nm) 정도의 실리콘 박막을 형성한다.In order to form a polycrystalline silicon film used as a channel layer of a thin film transistor liquid crystal device on an amorphous glass substrate, first, a few nanometers (nm) using radio-frequency sputtering equipment in an atmosphere in which argon and hydrogen gas are supplied Form a thin silicon film.
상기 박막층은 다결정 폴리실리콘막의 성장시 성장핵이 된다. 그 다음, 수소 가스의 공급을 중단하고 아르곤 가스만이 공급되는 분위기에서 450℃ 이하의 저온으로 다결정 폴리실리콘을 증착한다.The thin film layer becomes a growth nucleus upon growth of the polycrystalline polysilicon film. Then, the supply of hydrogen gas is stopped and polycrystalline polysilicon is deposited at a low temperature of 450 ° C. or lower in an atmosphere where only argon gas is supplied.
이와 같이, 다결정 실리콘막의 성장핵이 되는 실리콘 박막을 형성하여 아르곤 가스만이 공급되는 분위기로 저온에서 다결정 실리콘막을 형성하기 때문에 수분 흡수에 의한 막의 벗김(Peeling) 현상을 방지할 수 있어 양질의 다결정 폴리실리콘막을 형성할 수 있다.In this way, since the silicon thin film that is the growth nucleus of the polycrystalline silicon film is formed and the polycrystalline silicon film is formed at low temperature in an atmosphere in which only argon gas is supplied, peeling of the film due to moisture absorption can be prevented, thereby making it possible to obtain high quality polycrystalline poly. A silicon film can be formed.
또한, 장시간의 어닐링 공정이 생략됨으로 공정 시간을 단축할 수 있다.In addition, since the long annealing process is omitted, the process time can be shortened.
이상에서 설명한 바와 같이, 본 발명은 비정질 기판 상에 저온 공정 진행으로 양질의 다결정 폴리실리콘막을 형성함과 동시에 공정 진행 시간도 단축하여 생산 수율을 향상시킬 수 있다.As described above, the present invention can improve the production yield by forming a high-quality polycrystalline polysilicon film on the amorphous substrate at a low temperature process and at the same time shortening the process progress time.
이상에서 설명한 본 발명은 전술한 실시예 및 첨부된 도면에 의해 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능함이 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes can be made without departing from the technical spirit of the present invention. It will be evident to those who have knowledge of.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970028806A KR100260361B1 (en) | 1997-06-28 | 1997-06-28 | Method for manufacturing poly-silicon layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970028806A KR100260361B1 (en) | 1997-06-28 | 1997-06-28 | Method for manufacturing poly-silicon layer |
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| Publication Number | Publication Date |
|---|---|
| KR19990004670A true KR19990004670A (en) | 1999-01-25 |
| KR100260361B1 KR100260361B1 (en) | 2000-08-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1019970028806A KR100260361B1 (en) | 1997-06-28 | 1997-06-28 | Method for manufacturing poly-silicon layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8841206B2 (en) | 2010-09-03 | 2014-09-23 | Samsung Display Co., Ltd. | Method of forming polycrystalline silicon layer, and thin film transistor and organic light emitting device including the polycrystalline silicon layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0393236A (en) * | 1989-09-05 | 1991-04-18 | Seiko Epson Corp | Manufacture of semiconductor device |
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1997
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8841206B2 (en) | 2010-09-03 | 2014-09-23 | Samsung Display Co., Ltd. | Method of forming polycrystalline silicon layer, and thin film transistor and organic light emitting device including the polycrystalline silicon layer |
| US9406730B2 (en) | 2010-09-03 | 2016-08-02 | Samsung Display Co., Ltd. | Thin film transistor and organic light emitting device including polycrystalline silicon layer |
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| Publication number | Publication date |
|---|---|
| KR100260361B1 (en) | 2000-08-01 |
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