KR19990001668A - Electromagnetic Shielding Semiconductor Package - Google Patents
Electromagnetic Shielding Semiconductor Package Download PDFInfo
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- KR19990001668A KR19990001668A KR1019970025061A KR19970025061A KR19990001668A KR 19990001668 A KR19990001668 A KR 19990001668A KR 1019970025061 A KR1019970025061 A KR 1019970025061A KR 19970025061 A KR19970025061 A KR 19970025061A KR 19990001668 A KR19990001668 A KR 19990001668A
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- semiconductor package
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- wave shielding
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Abstract
본 발명의 전자파 차폐형 반도체 패키지는, 반도체 소자를 둘러싸는 몰딩 수지를 전기적으로 접지된 전자파 차폐층으로 둘러쌈으로써 상기 반도체 소자 내부의 전자파가 외부로 나가는 것을 차단할 수 있다.In the electromagnetic wave shielding semiconductor package of the present invention, the molding resin surrounding the semiconductor element is surrounded by an electrically grounded electromagnetic wave shielding layer, thereby preventing the electromagnetic wave inside the semiconductor element from going out.
Description
본 발명은 반도체 장치에 관한 것으로서, 특히 반도체 집적회로에서 발생되는 전자파가 외부로 나가지 못하도록 하기 위한 전자파 차폐형 반도체 패키지에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to an electromagnetic shielding type semiconductor package for preventing electromagnetic waves generated from semiconductor integrated circuits from going out.
일반적으로 반도체 장치는 반도체 기판상에 회로를 집적한 반도체 소자를 도 1 에 도시한 바와 같이 몰딩 수지(10)로 밀봉한 패키지 형태로 제작된다. 이와 같은 반도체 집적회로는 회로기판상에 실장되어 전기적 기능을 수행하게 되는 바, 외부의 전자파가 집적회로의 내부회로에 영향을 미치게 되어 집적회로의 회로동작상의 오동작을 유발시키거나 회로특성을 열하시키는 문제가 제기되고 있다.Generally, a semiconductor device is manufactured in the form of a package in which a semiconductor element in which a circuit is integrated on a semiconductor substrate is sealed with a molding resin 10 as shown in FIG. 1. Such a semiconductor integrated circuit is mounted on a circuit board to perform an electrical function, and external electromagnetic waves affect the internal circuit of the integrated circuit, causing malfunctions or degrading circuit characteristics of the integrated circuit. The problem is being raised.
반대로, 집적회로의 고속화로 인하여 집적회로가 전자파 발생원이 되어 인접한 다른 회로구성에 영향을 주게 되는 문제도 활발히 연구되고 있다.On the contrary, due to the high speed of the integrated circuit, the problem that the integrated circuit becomes a source of electromagnetic waves and affects other adjacent circuit configurations is also actively studied.
특히 통신장치와 같은 고주파신호를 처리하는 응용분야에 사용되는 집적회로에서는 이와같은 전자파로 인한 오동작이 심각한 문제로 대두되고 있을뿐만 아니라 이러한 통신장치를 사용하는 인체에 악영향을 끼치고 심한 경우 질병을 유발한다는 보고가 증가하고 있기 때문에, 각 나라에서는 전자제품의 전자파 차폐특성을 엄격히 규정하고 있다.In particular, in integrated circuits used in applications that process high frequency signals such as communication devices, malfunctions caused by electromagnetic waves are not only a serious problem, but also adversely affect the human body using such communication devices and cause diseases in severe cases. As reports increase, each country strictly regulates electromagnetic shielding characteristics of electronic products.
따라서 본 발명의 목적은 이와 같은 종래기술의 문제점을 해결하기 위하여, 종래와 동일하게 상기 반도체 소자를 몰딩 수지로 둘러싼 후, 추가로 상기 몰딩 수지의 외부표면 전체를 다시 전자파 차폐층으로 둘러쌈으로써 상기 반도체 소자 내부의 전자파가 외부로 나가는 것을 차단할 수 있는 전자파 차폐형 반도체 패키지를 제공하는 것이다.Accordingly, an object of the present invention is to surround the semiconductor device with a molding resin in the same manner as in the prior art in order to solve the problems of the prior art, and then further surrounds the entire outer surface of the molding resin again with an electromagnetic shielding layer. It is to provide an electromagnetic shielding semiconductor package that can block the electromagnetic wave from going inside the semiconductor device to the outside.
상기 목적을 달성하기 위한 본 발명의 전자파 차폐형 반도체 패키지는, 반도체 소자와, 상기 반도체 소자를 외부단자와 접속하는 와이어 및 상기 반도체소자와 와이어를 둘러싸 봉지하는 몰딩수지를 구비하는 반도체 패키지에 있어서, 상기 몰딩수지 전면을 덮으며 전기적으로 접지된 전자파 차폐층을 포함하여 구성된 것을 특징으로 한다.An electromagnetic wave shielding semiconductor package of the present invention for achieving the above object is a semiconductor package comprising a semiconductor element, a wire connecting the semiconductor element with an external terminal, and a molding resin surrounding and encapsulating the semiconductor element and the wire, It characterized by including an electromagnetic shielding layer electrically covering the molding resin front surface.
도 1 은 종래의 기술에 의한 반도체 패키지를 도시한 것이고,1 illustrates a semiconductor package according to the related art,
도 2 는 본 발명의 제 1 실시예에 의한 전자파 차폐형 반도체 패키지를 도시한 것이며,2 shows an electromagnetic wave shielding semiconductor package according to a first embodiment of the present invention,
도 3 은 도 2 의 일부분을 확대도시한 것이며,3 is an enlarged view of a portion of FIG. 2;
도 4 는 본 발명의 제 2 실시예에 의한 전자파 차폐형 반도체 패키지의 일부분을 확대 도시한 것이다.4 is an enlarged view of a portion of an electromagnetic wave shielding semiconductor package according to a second embodiment of the present invention.
도면의 주요 부분에 대한 부호의 설명Explanation of symbols for the main parts of the drawings
110 : 몰딩 수지120 : 핀110: molding resin 120: pin
130 : 전자파 차폐층140 : 보호막130: electromagnetic shielding layer 140: protective film
이하, 첨부도면을 참조하여 본 발명을 보다 상세히 설명하고자 한다.Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.
반도체 패키지는 도시하지는 않았으나 일반적으로 반도체 소자 및 상기 반도체 소자와 외부단자(또는 핀)(120)를 접속하는 와이어를 몰딩 수지로 봉지하여 형성한 것으로서, 본 발명의 제 1 실시예에서는 도 2 및 도 3 에 도시한 바와 같이 외부로 노출된 핀을 제외한 반도체 칩 전면의 상기 몰딩수지(110)를 박막의 전자파 차폐층(130)으로 둘러쌈으로써 상기 반도체 소자 내부의 전자파가 반도체 패키지 외부로 나가는 것을 차단할 수 있도록 한다.Although not shown, a semiconductor package is generally formed by encapsulating a semiconductor device and a wire connecting the semiconductor device and an external terminal (or pin) 120 with a molding resin. In the first embodiment of the present invention, FIGS. As shown in FIG. 3, the molding resin 110 on the front surface of the semiconductor chip excluding the fins exposed to the outside may be surrounded by the electromagnetic wave shielding layer 130 of a thin film, thereby preventing electromagnetic waves inside the semiconductor device from going out of the semiconductor package. To help.
상기 전자파 차폐층(130)은, 도체 표면에 작용하는 전자계에 의해 그 부분에서 흐르는 높은 주파수의 전류가 표면에서 내부로 들어감에 따라 감쇠하는 표면깊이(skin depth) 효과를 이용하기 위해 전기적으로 접지된 금속층을 사용하며, 상기 금속층은 Al나 Cu를 코팅하여 사용하되 100Khz 이상의 고주파 소자인 경우 0.2mm 이상의 두께로 형성한다.The electromagnetic shielding layer 130 is electrically grounded to take advantage of a skin depth effect that attenuates as the high frequency current flowing in that portion enters from the surface by an electromagnetic field acting on the conductor surface. A metal layer is used, and the metal layer is coated with Al or Cu, but is formed to a thickness of 0.2 mm or more in the case of a high frequency device of 100 Khz or more.
그리고 본 발명의 제 2 실시예에서는 상기 제 1 실시예의 전자파 차폐층(130)이 운반 또는 보관중 외부요인에 의해 손상되는 것을 방지하기 위해 상기 몰딩수지(110)와 동일한 물질로 상기 전자파 차폐층(130)을 둘러싸는 보호막(140)을 형성한다.In addition, in the second embodiment of the present invention, the electromagnetic shielding layer 130 is made of the same material as the molding resin 110 in order to prevent the electromagnetic shielding layer 130 of the first embodiment from being damaged by external factors during transportation or storage. The passivation layer 140 surrounding the 130 is formed.
이상에서와 같이 본 발명에 의하면, 기존의 반도체 패키지를 전기적으로 접지된 전자파 차폐층으로 둘러쌈으로써 상기 반도체 소자 내부의 전자파가 외부로 나가는 것을 차단할 수 있는 효과가 있다.As described above, according to the present invention, the existing semiconductor package is surrounded by an electrically grounded electromagnetic shielding layer, thereby preventing the electromagnetic waves inside the semiconductor device from going out.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970025061A KR19990001668A (en) | 1997-06-17 | 1997-06-17 | Electromagnetic Shielding Semiconductor Package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970025061A KR19990001668A (en) | 1997-06-17 | 1997-06-17 | Electromagnetic Shielding Semiconductor Package |
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| Publication Number | Publication Date |
|---|---|
| KR19990001668A true KR19990001668A (en) | 1999-01-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019970025061A KR19990001668A (en) | 1997-06-17 | 1997-06-17 | Electromagnetic Shielding Semiconductor Package |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01115145A (en) * | 1987-10-28 | 1989-05-08 | Mitsubishi Electric Corp | Resin sealed type integrated circuit |
| JPH01255254A (en) * | 1988-04-05 | 1989-10-12 | Seiko Epson Corp | Packaging method for semiconductor integrated circuit |
| JPH0494560A (en) * | 1990-08-10 | 1992-03-26 | Seiko Epson Corp | Semiconductor device |
| JPH04278567A (en) * | 1991-03-07 | 1992-10-05 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPH06288686A (en) * | 1993-04-01 | 1994-10-18 | Nippon Steel Corp | Operating method for moving layer |
-
1997
- 1997-06-17 KR KR1019970025061A patent/KR19990001668A/en not_active Application Discontinuation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01115145A (en) * | 1987-10-28 | 1989-05-08 | Mitsubishi Electric Corp | Resin sealed type integrated circuit |
| JPH01255254A (en) * | 1988-04-05 | 1989-10-12 | Seiko Epson Corp | Packaging method for semiconductor integrated circuit |
| JPH0494560A (en) * | 1990-08-10 | 1992-03-26 | Seiko Epson Corp | Semiconductor device |
| JPH04278567A (en) * | 1991-03-07 | 1992-10-05 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPH06288686A (en) * | 1993-04-01 | 1994-10-18 | Nippon Steel Corp | Operating method for moving layer |
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