JPH05129476A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPH05129476A
JPH05129476A JP28889191A JP28889191A JPH05129476A JP H05129476 A JPH05129476 A JP H05129476A JP 28889191 A JP28889191 A JP 28889191A JP 28889191 A JP28889191 A JP 28889191A JP H05129476 A JPH05129476 A JP H05129476A
Authority
JP
Japan
Prior art keywords
semiconductor device
resin
electromagnetic wave
sealed
sealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28889191A
Other languages
Japanese (ja)
Inventor
Akihiko Fujita
昭彦 藤田
Hiroshi Matsushima
博 松島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP28889191A priority Critical patent/JPH05129476A/en
Publication of JPH05129476A publication Critical patent/JPH05129476A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

PURPOSE:To provide a semiconductor device which can prevent the malfunction of its semiconductor element even when the element is subject to electromagnetic waves. CONSTITUTION:By mixing an electromagnetic wave absorbing agent 7, such as silicon carbide, whiskers, etc., which absorb electromagnetic noise in a resin 9 used for sealing a semiconductor element 3, external and internal noise to a semiconductor device 1 are prevented so that the malfunction of the element 3 can be eliminated and, at the same time, adverse influences on human bodies can be prevented.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、半導体装置およびそ
の製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and its manufacturing method.

【0002】[0002]

【従来の技術】近年、電子回路素子の高集積化、大規模
化に相反して半導体パッケージの小型化、薄型化が進ん
でおり、それに伴い電子機器の回路がより高密度化され
ている。このため、外部からの電磁波により回路の動作
が阻害されたり、電子回路の動作によって発生する電磁
波ノイズが他の回路の動作を阻害したり、さらには人体
に影響するといった電磁波による問題がクローズアップ
されおり、このような電子機器においては電磁波対策が
不可欠となっている。
2. Description of the Related Art In recent years, semiconductor packages have been made smaller and thinner in opposition to higher integration and larger scale of electronic circuit elements, and accordingly, circuits of electronic devices have been made higher in density. Therefore, electromagnetic waves from outside interfere with the operation of circuits, electromagnetic noise generated by the operation of electronic circuits interferes with the operation of other circuits, and further affects the human body. Therefore, measures against electromagnetic waves are indispensable for such electronic devices.

【0003】例えば、従来の樹脂封止型半導体装置11
は、図9に示すように、ダイパッド2上に載置された半
導体チップ3とプリント基板上の回路配線との電気的導
通をとるためのリードフレーム4とを金属ワイヤ5で接
続し、これらを樹脂6で封止して構成されており、図1
0に示すように、プリント基板17上に接続された樹脂
封止型半導体装置11に対し、電子機器全体をシールド
材(電磁波遮蔽材)18で覆い電磁波を遮蔽するように
していた。
For example, a conventional resin-sealed semiconductor device 11
As shown in FIG. 9, a semiconductor chip 3 mounted on the die pad 2 and a lead frame 4 for electrically connecting the circuit wiring on the printed circuit board are connected by a metal wire 5, and these are connected. It is configured by sealing with resin 6, and as shown in FIG.
As shown in FIG. 0, with respect to the resin-sealed semiconductor device 11 connected on the printed board 17, the entire electronic device is covered with a shield material (electromagnetic wave shielding material) 18 to shield electromagnetic waves.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、、電子
機器全体をシールド材で覆うといった従来の電磁波対策
では、隣接する半導体装置間では相互に電磁波の影響を
受けるため、電子回路の誤動作を十分に防止できないと
いう問題点があった。この発明の目的は、上記従来の課
題を解決し、外部からの電磁波の影響を防止するととも
に、隣接する半導体装置間相互の電磁波の影響をも防止
する半導体装置およびその製造方法を提供することであ
る。
However, in conventional electromagnetic wave countermeasures such as covering the entire electronic device with a shield material, adjacent semiconductor devices are mutually affected by the electromagnetic wave, so that malfunction of the electronic circuit is sufficiently prevented. There was a problem that I could not. An object of the present invention is to provide a semiconductor device and a manufacturing method thereof, which solve the above-mentioned conventional problems and prevent the influence of electromagnetic waves from the outside, and also prevent the influence of mutual electromagnetic waves between adjacent semiconductor devices. is there.

【0005】[0005]

【課題を解決するための手段】この発明は上記課題を解
決するため、次のような構成を採用した。請求項1の発
明の半導体装置は、半導体素子の封止材料またはコーテ
ィング材料に電磁波ノイズを吸収する電磁波吸収剤を混
入している。請求項2の発明の半導体製造方法は、小さ
い金型にセットされた半導体装置を封止した後、この封
止された半導体装置を大きい金型にセットし、電磁波吸
収剤を混入した封止材料を用いて再度封止するようにし
ている。
In order to solve the above problems, the present invention adopts the following configuration. In the semiconductor device according to the invention of claim 1, an electromagnetic wave absorber that absorbs electromagnetic noise is mixed in the sealing material or the coating material of the semiconductor element. In the semiconductor manufacturing method of the invention of claim 2, after sealing the semiconductor device set in a small mold, the sealed semiconductor device is set in a large mold and an electromagnetic wave absorbent is mixed. Is used to reseal.

【0006】[0006]

【作用】請求項1の発明の構成によれば、電磁波を吸収
する材料が封止材料またはコーティング材料に混入され
ているので、外部からの電磁波ノイズを吸収して内部回
路に影響を与えない。また、半導体素子内部からの電磁
波ノイズも吸収して外部に洩らさないので、他の電子回
路の誤動作を防止することができる。
According to the structure of the first aspect of the present invention, since the material that absorbs electromagnetic waves is mixed in the sealing material or the coating material, electromagnetic wave noise from the outside is absorbed and the internal circuit is not affected. Further, since electromagnetic wave noise from the inside of the semiconductor element is also absorbed and does not leak outside, malfunction of other electronic circuits can be prevented.

【0007】請求項2の発明の構成によれば、導電性あ
る電磁波吸収剤が半導体装置に接触しないように固相状
態で製造されるので、リーク不良の発生を抑えて確実に
電磁波を遮蔽することができる。
According to the second aspect of the present invention, since the conductive electromagnetic wave absorbent is manufactured in a solid state so as not to come into contact with the semiconductor device, occurrence of leak defects is suppressed and electromagnetic waves are reliably shielded. be able to.

【0008】[0008]

【実施例】以下、この発明の実施例について図面を参照
しながら説明する。図1は、第1の実施例である樹脂封
止型半導体装置1の構成を示す断面図で、装置1の本体
は、図9に示す従来例と同じ樹脂封止型として構成され
ており、同符号は同じものを示す。すなわち、図1にお
いて、2はダイパッド、3は半導体素子、4はリードフ
レーム、5は金属ワイヤ、6は封止樹脂である。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view showing the configuration of a resin-sealed semiconductor device 1 according to the first embodiment. The main body of the device 1 is configured as the same resin-sealed type as the conventional example shown in FIG. The same reference numerals indicate the same things. That is, in FIG. 1, 2 is a die pad, 3 is a semiconductor element, 4 is a lead frame, 5 is a metal wire, and 6 is a sealing resin.

【0009】図1に示す実施例装置が従来のものと異な
るのは、半導体素子3を封止する封止樹脂6に対して電
磁波吸収剤7が混入された樹脂9が上下に接合して成形
されている点である。これにより、半導体装置の外部お
よび内部からの電磁波を吸収することができ、電子回路
の誤動作防止や人体への影響を防止することができる。
電磁波吸収剤7には、シリコンカーバイド、酸化亜鉛ウ
ィスカ等が使用されている。
The device of the embodiment shown in FIG. 1 differs from the conventional device in that a resin 9 containing an electromagnetic wave absorber 7 is vertically joined to a sealing resin 6 for sealing a semiconductor element 3 and molded. That is the point. This makes it possible to absorb electromagnetic waves from the outside and the inside of the semiconductor device, prevent malfunction of the electronic circuit, and prevent effects on the human body.
Silicon carbide, zinc oxide whiskers, etc. are used as the electromagnetic wave absorber 7.

【0010】図2は、図1と同様に、電磁波吸収剤7が
混入された樹脂9が上部に接合成形されたセラミック封
止型の半導体装置の構成を示す断面図で、このように構
成しても同様の効果が得られる。図3は、第2の実施例
である樹脂封止型半導体装置の構成を示す断面図で、装
置本体の構成は、図1に示す第1の実施例の構成と同じ
である。図1の構成と異なるのは、封止樹脂6中に、封
止樹脂よりも融点の高い樹脂やゴム等の絶縁性材料8で
表面全体をコーティングした電磁波吸収剤7を混入して
おき、この封止樹脂6によって成形した点である。
As in FIG. 1, FIG. 2 is a cross-sectional view showing the structure of a ceramic-sealed semiconductor device in which a resin 9 mixed with an electromagnetic wave absorbent 7 is bonded and molded on the upper portion, and is constructed in this manner. However, the same effect can be obtained. FIG. 3 is a cross-sectional view showing the structure of the resin-sealed semiconductor device of the second embodiment, and the structure of the device body is the same as that of the first embodiment shown in FIG. The difference from the configuration of FIG. 1 is that the sealing resin 6 is mixed with an electromagnetic wave absorber 7 whose entire surface is coated with an insulating material 8 such as resin or rubber having a melting point higher than that of the sealing resin. This is a point formed by the sealing resin 6.

【0011】このような構成にしたのは、シリコンカー
バイドや酸化亜鉛ウィスカ等の電磁波吸収剤7が導電性
を有するため、金属ワイヤ5間、リードフレーム4のピ
ン間、またはプリント基板上の配線間にまたがって電磁
波吸収剤7が存在すると、回路動作時にリーク不良を起
こす可能性が大きくなるからである。そこで、あらかじ
め電磁波吸収剤を上記した絶縁性材料8でコーティング
しておき、電磁波吸収剤7が他と接触しないようにした
ものである。これにより、リーク不良の発生を抑えるこ
とができる。
With such a structure, since the electromagnetic wave absorber 7 such as silicon carbide or zinc oxide whiskers has conductivity, between the metal wires 5, between the pins of the lead frame 4, or between the wirings on the printed circuit board. This is because if the electromagnetic wave absorber 7 is present over the area, there is a high possibility that a leak failure will occur during circuit operation. Therefore, the electromagnetic wave absorber is coated with the above-mentioned insulating material 8 in advance so that the electromagnetic wave absorber 7 does not come into contact with others. As a result, it is possible to suppress the occurrence of defective leakage.

【0012】第2の実施例では、図4に示すように、コ
ーティングされた電磁波吸収剤7を混合した樹脂9を半
導体素子3のコーティングレジンとして接合してもよ
く、図5に示すように、ポッティング樹脂として、ある
いは図6に示すように、樹脂封止型半導体装置10が装
着されたプリント基板11全体をコーティングしても同
様の効果が得られる。
In the second embodiment, as shown in FIG. 4, a resin 9 mixed with a coated electromagnetic wave absorber 7 may be bonded as a coating resin for the semiconductor element 3, and as shown in FIG. Similar effects can be obtained by coating the entire printed circuit board 11 on which the resin-sealed semiconductor device 10 is mounted, as potting resin, or as shown in FIG.

【0013】図7は、樹脂封止型半導体装置に対し、封
止樹脂よりも融点の高い樹脂やゴム等の絶縁性材料8で
コーティングした電磁波吸収剤7を混入した樹脂9でも
って装置全体をさらに封止し、樹脂2重封止型半導体装
置として構成した場合を示す図で、この様な構成によ
り、さらに確実な電磁波遮蔽効果を得ることができる。
図8(a)(b)は、図7に示す樹脂2重封止型半導体
装置の製造方法を実施するための工程を示す図で、大き
さの異なる封止金型を用いて半導体装置を封止するよう
にしている。
FIG. 7 shows a resin-encapsulated semiconductor device in which the entire device is assembled with a resin 9 mixed with an electromagnetic wave absorber 7 coated with an insulating material 8 such as resin or rubber having a melting point higher than that of the encapsulating resin. It is a figure showing the case where it is further sealed and configured as a resin double-sealed semiconductor device. With such a configuration, a more reliable electromagnetic wave shielding effect can be obtained.
8A and 8B are diagrams showing steps for carrying out the method for manufacturing the resin double-sealed semiconductor device shown in FIG. 7, in which the semiconductor device is manufactured by using sealing molds of different sizes. It is designed to be sealed.

【0014】まず、図8(a)に示すように、小さい金
型12にセットされた半導体装置に対し、金型を閉じて
タブレット化した封止樹脂6をプランジャ13で押し込
み、封止樹脂6をキャビティに充填して成形する。次
に、図8(b)に示すように、大きい金型14に封止樹
脂6で封止された半導体装置10をセットし、樹脂等で
表面がコーティングされた電磁波吸収剤7が混入されタ
ブレット化した樹脂9をプランジャ15で押し込み、樹
脂9をキャビティに充填して成形する。このような工程
により容易に樹脂2重封止型半導体装置を製造すること
ができる。
First, as shown in FIG. 8A, the sealing resin 6 formed into a tablet by closing the die is pushed into the semiconductor device set in the small die 12 by the plunger 13, and the sealing resin 6 Is filled in the cavity and molded. Next, as shown in FIG. 8B, the semiconductor device 10 sealed with the sealing resin 6 is set in the large mold 14, and the electromagnetic wave absorber 7 whose surface is coated with a resin or the like is mixed into the tablet. The resin 9 thus converted is pushed by the plunger 15 to fill the cavity with the resin 9 for molding. Through such steps, the resin double-sealed semiconductor device can be easily manufactured.

【0015】[0015]

【発明の効果】以上のように、この発明の半導体装置に
よれば、電磁波を吸収する材料が封止材料またはコーテ
ィング材料に混入されているので、外部からの電磁波ノ
イズを吸収して内部回路に影響を与えず、また、半導体
素子内部からの電磁波ノイズも吸収して外部に洩らさな
いので、半導体装置によって構成される電子回路の誤動
作を防止することができるとともに、人体への影響を大
きく削減することができるようになった。
As described above, according to the semiconductor device of the present invention, since the electromagnetic wave absorbing material is mixed in the sealing material or the coating material, the electromagnetic wave noise from the outside is absorbed to the internal circuit. Since it has no influence and also absorbs electromagnetic noise from the inside of the semiconductor element and does not leak to the outside, it is possible to prevent malfunction of the electronic circuit formed by the semiconductor device and to greatly affect the human body. It has become possible to reduce.

【0016】また、この発明の半導体製造方法によれ
ば、容易に樹脂2重封止型半導体装置を製造することが
でき、さらに確実な電磁波遮蔽効果を得ることができる
半導体装置を提供することができるようになった。
Further, according to the semiconductor manufacturing method of the present invention, it is possible to easily manufacture a resin double-sealed semiconductor device and to provide a semiconductor device which can obtain a more reliable electromagnetic wave shielding effect. I can do it.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の第1の実施例である樹脂封止型半導
体装置の構成を示す断面図である。
FIG. 1 is a sectional view showing a configuration of a resin-sealed semiconductor device according to a first embodiment of the present invention.

【図2】第1の実施例であるセラミック封止型半導体装
置の構成を示す断面図である。
FIG. 2 is a sectional view showing a configuration of a ceramic-sealed semiconductor device according to a first embodiment.

【図3】この発明の第2の実施例である樹脂封止型半導
体装置の構成を示す断面図である。
FIG. 3 is a sectional view showing a configuration of a resin-sealed semiconductor device according to a second embodiment of the present invention.

【図4】第2の実施例の変形例の構成を示す断面図であ
る。
FIG. 4 is a sectional view showing a configuration of a modified example of the second embodiment.

【図5】第2の実施例の変形例の構成を示す断面図であ
る。
FIG. 5 is a sectional view showing a configuration of a modified example of the second embodiment.

【図6】第2の実施例の変形例の構成を示す断面図であ
る。
FIG. 6 is a cross-sectional view showing a configuration of a modified example of the second embodiment.

【図7】この発明の第2の実施例の樹脂を2重封止法に
よって封止した半導体装置の断面図を示す。
FIG. 7 shows a cross-sectional view of a semiconductor device in which a resin according to a second embodiment of the present invention is sealed by a double sealing method.

【図8】この発明の製造方法の工程を説明する図であ
る。
FIG. 8 is a diagram illustrating a step of the manufacturing method of the present invention.

【図9】従来の樹脂封止型半導体装置の構成を示す断面
図である。
FIG. 9 is a cross-sectional view showing a configuration of a conventional resin-encapsulated semiconductor device.

【図10】従来の電磁波対策を説明する図である。FIG. 10 is a diagram illustrating a conventional electromagnetic wave countermeasure.

【符号の説明】[Explanation of symbols]

1 半導体装置 2 ダイパット 3 半導体素子 4 リードフレーム 5 金属ワイヤ 6 封止樹脂 7 電磁波吸収剤 8 絶縁性材料 9 電磁波吸収剤を混入した樹脂 12 小さい金型 14 大きい金型 DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Die pad 3 Semiconductor element 4 Lead frame 5 Metal wire 6 Sealing resin 7 Electromagnetic wave absorber 8 Insulating material 9 Resin mixed with electromagnetic wave absorber 12 Small mold 14 Large mold

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 半導体素子の封止材料またはコーティン
グ材料に電磁波ノイズを吸収する電磁波吸収剤を混入さ
せたことを特徴とする半導体装置。
1. A semiconductor device, wherein an electromagnetic wave absorber that absorbs electromagnetic wave noise is mixed in a sealing material or a coating material of a semiconductor element.
【請求項2】 電磁波吸収剤の表面を半導体素子の封止
材料またはコーティング材料よりも融点の高い絶縁性材
料でコーティングした請求項1記載の半導体装置。
2. The semiconductor device according to claim 1, wherein the surface of the electromagnetic wave absorber is coated with an insulating material having a melting point higher than that of the sealing material or coating material for the semiconductor element.
【請求項3】 小さい金型にセットされた半導体装置を
封止した後、この封止された半導体装置を大きい金型に
セットし、電磁波吸収剤を混入した封止材料を用いて再
度封止することを特徴とする半導体装置の製造方法。
3. A semiconductor device set in a small mold is sealed, then this sealed semiconductor device is set in a large mold, and sealed again using a sealing material mixed with an electromagnetic wave absorber. A method of manufacturing a semiconductor device, comprising:
JP28889191A 1991-11-05 1991-11-05 Semiconductor device and manufacture thereof Pending JPH05129476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28889191A JPH05129476A (en) 1991-11-05 1991-11-05 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28889191A JPH05129476A (en) 1991-11-05 1991-11-05 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH05129476A true JPH05129476A (en) 1993-05-25

Family

ID=17736118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28889191A Pending JPH05129476A (en) 1991-11-05 1991-11-05 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH05129476A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6800804B2 (en) 2001-06-12 2004-10-05 Nitto Denko Corporation Epoxy resin composition used for encapsulating semiconductor and semiconductor device using the composition
JP2005217221A (en) * 2004-01-30 2005-08-11 Sony Corp Semiconductor package and method for manufacturing the same
JP2008001757A (en) * 2006-06-20 2008-01-10 Kyocera Chemical Corp Resin composition for semiconductor sealing use and resin-sealed type semiconductor device
JP2010071724A (en) * 2008-09-17 2010-04-02 Mitsubishi Electric Corp Resin molded semiconductor sensor and method of manufacturing the same
US8884424B2 (en) 2010-01-13 2014-11-11 Advanced Semiconductor Engineering, Inc. Semiconductor package with single sided substrate design and manufacturing methods thereof
US9349611B2 (en) 2010-03-22 2016-05-24 Advanced Semiconductor Engineering, Inc. Stackable semiconductor package and manufacturing method thereof
US9406658B2 (en) 2010-12-17 2016-08-02 Advanced Semiconductor Engineering, Inc. Embedded component device and manufacturing methods thereof
WO2020241468A1 (en) * 2019-05-30 2020-12-03 東洋紡株式会社 Resin composition for insert molding, sealing body for electronic component, and method for producing sealing body for electronic component

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6800804B2 (en) 2001-06-12 2004-10-05 Nitto Denko Corporation Epoxy resin composition used for encapsulating semiconductor and semiconductor device using the composition
JP2005217221A (en) * 2004-01-30 2005-08-11 Sony Corp Semiconductor package and method for manufacturing the same
JP2008001757A (en) * 2006-06-20 2008-01-10 Kyocera Chemical Corp Resin composition for semiconductor sealing use and resin-sealed type semiconductor device
JP2010071724A (en) * 2008-09-17 2010-04-02 Mitsubishi Electric Corp Resin molded semiconductor sensor and method of manufacturing the same
US8884424B2 (en) 2010-01-13 2014-11-11 Advanced Semiconductor Engineering, Inc. Semiconductor package with single sided substrate design and manufacturing methods thereof
US9196597B2 (en) 2010-01-13 2015-11-24 Advanced Semiconductor Engineering, Inc. Semiconductor package with single sided substrate design and manufacturing methods thereof
US9349611B2 (en) 2010-03-22 2016-05-24 Advanced Semiconductor Engineering, Inc. Stackable semiconductor package and manufacturing method thereof
US9406658B2 (en) 2010-12-17 2016-08-02 Advanced Semiconductor Engineering, Inc. Embedded component device and manufacturing methods thereof
WO2020241468A1 (en) * 2019-05-30 2020-12-03 東洋紡株式会社 Resin composition for insert molding, sealing body for electronic component, and method for producing sealing body for electronic component
JP2020193304A (en) * 2019-05-30 2020-12-03 東洋紡株式会社 Resin composition for insert molding, electronic part-sealed body, and method for producing electronic part-sealed body

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