KR19980071177A - 반도체 장치의 제작 방법 - Google Patents

반도체 장치의 제작 방법 Download PDF

Info

Publication number
KR19980071177A
KR19980071177A KR1019980003625A KR19980003625A KR19980071177A KR 19980071177 A KR19980071177 A KR 19980071177A KR 1019980003625 A KR1019980003625 A KR 1019980003625A KR 19980003625 A KR19980003625 A KR 19980003625A KR 19980071177 A KR19980071177 A KR 19980071177A
Authority
KR
South Korea
Prior art keywords
silicon film
region
metal element
film
crystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019980003625A
Other languages
English (en)
Korean (ko)
Inventor
순페이 야마자키
Original Assignee
순페이 야마자키
한도타이 에네루기 겐큐쇼 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 순페이 야마자키, 한도타이 에네루기 겐큐쇼 주식회사 filed Critical 순페이 야마자키
Publication of KR19980071177A publication Critical patent/KR19980071177A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H10P36/07—Gettering within semiconductor bodies within silicon bodies of silicon-on-insulator structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
KR1019980003625A 1997-01-28 1998-01-30 반도체 장치의 제작 방법 Ceased KR19980071177A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP97-29552 1997-01-28
JP02955297A JP3696710B2 (ja) 1997-01-28 1997-01-28 半導体装置の作製方法

Publications (1)

Publication Number Publication Date
KR19980071177A true KR19980071177A (ko) 1998-10-26

Family

ID=12279316

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980003625A Ceased KR19980071177A (ko) 1997-01-28 1998-01-30 반도체 장치의 제작 방법

Country Status (2)

Country Link
JP (1) JP3696710B2 (enExample)
KR (1) KR19980071177A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4712156B2 (ja) * 1999-05-10 2011-06-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6858480B2 (en) 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH10214973A (ja) 1998-08-11
JP3696710B2 (ja) 2005-09-21

Similar Documents

Publication Publication Date Title
US6448118B2 (en) Semiconductor film manufacturing with selective introduction of crystallization promoting material
KR100574581B1 (ko) 반도체 장치 제조 방법
US6893503B1 (en) Method of manufacturing a semiconductor device
JP3942683B2 (ja) 半導体装置作製方法
US6337259B1 (en) Method for fabricating semiconductor device with high quality crystalline silicon film
US6210997B1 (en) Semiconductor device and method for manufacturing the same
US6180439B1 (en) Method for fabricating a semiconductor device
JP3032801B2 (ja) 半導体装置の作製方法
US7056381B1 (en) Fabrication method of semiconductor device
KR100483819B1 (ko) 반도체장치제작방법
JP3754184B2 (ja) 薄膜トランジスタを備えたフラットパネルディスプレイの作製方法
US6355509B1 (en) Removing a crystallization catalyst from a semiconductor film during semiconductor device fabrication
JP4242461B2 (ja) 半導体装置の作製方法
JPH08339960A (ja) 半導体装置の作製方法
JP4190600B2 (ja) 半導体装置の作製方法
JP3696710B2 (ja) 半導体装置の作製方法
JPH1187732A (ja) 半導体装置およびその作製方法
JP4317105B2 (ja) 半導体装置の作製方法
JP4409529B2 (ja) 半導体装置の作製方法
JP4104901B2 (ja) アクティブマトリクス型表示装置
JP3830769B2 (ja) 結晶性半導体膜の作製方法
JPH09266172A (ja) 半導体装置の作製方法
JPH09321314A (ja) 半導体装置の作製方法
JP2001135826A (ja) 薄膜トランジスタ及び薄膜トランジスタを用いた半導体装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

St.27 status event code: N-3-6-B10-B17-rex-PB0601

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20050727

Effective date: 20061031

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20061031

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 1998 3625

Appeal request date: 20050727

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2005101004901

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000