KR102977784B1 - 직시형 디스플레이용 서브픽셀 발광 다이오드 및 이의 제조 방법 - Google Patents

직시형 디스플레이용 서브픽셀 발광 다이오드 및 이의 제조 방법

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Publication number
KR102977784B1
KR102977784B1 KR1020227044261A KR20227044261A KR102977784B1 KR 102977784 B1 KR102977784 B1 KR 102977784B1 KR 1020227044261 A KR1020227044261 A KR 1020227044261A KR 20227044261 A KR20227044261 A KR 20227044261A KR 102977784 B1 KR102977784 B1 KR 102977784B1
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leds
layer
subset
substrate
backplane
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Korean (ko)
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KR20230013072A (ko
Inventor
아누샤 포크리얄
줄랄 테즈칸 오젤
사켓 차다
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삼성전자주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/012—Manufacture or treatment of active-matrix LED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/02—Manufacture or treatment using pick-and-place processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H10H29/49—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/832—Electrodes
    • H10H29/8322—Electrodes characterised by their materials
    • H10H29/8325—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H01L2924/12041—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/036—Manufacture or treatment of packages
    • H10H29/0364—Manufacture or treatment of packages of interconnections

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  • Led Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
KR1020227044261A 2020-05-18 2021-05-11 직시형 디스플레이용 서브픽셀 발광 다이오드 및 이의 제조 방법 Active KR102977784B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063026454P 2020-05-18 2020-05-18
US63/026,454 2020-05-18
PCT/US2021/031868 WO2021236382A1 (en) 2020-05-18 2021-05-11 Subpixel light emitting diodes for direct view display and methods of making the same

Publications (2)

Publication Number Publication Date
KR20230013072A KR20230013072A (ko) 2023-01-26
KR102977784B1 true KR102977784B1 (ko) 2026-06-12

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Country Status (7)

Country Link
US (2) US11973172B2 (enExample)
EP (1) EP4154324B1 (enExample)
JP (1) JP7611271B2 (enExample)
KR (1) KR102977784B1 (enExample)
CN (1) CN115989590A (enExample)
TW (1) TWI893113B (enExample)
WO (1) WO2021236382A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12299641B2 (en) * 2018-08-03 2025-05-13 Cirqil, Inc. Systems and methods for organizing and sharing contact and calendar information
CN115989590A (zh) 2020-05-18 2023-04-18 纳诺西斯有限公司 用于直视型显示器的次像素发光二极管及其制造方法
CN114927458B (zh) * 2022-05-26 2025-07-25 广东省科学院半导体研究所 芯片转移方法、Micro-LED显示器件及制作方法
JPWO2024247230A1 (enExample) * 2023-06-01 2024-12-05

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190088820A1 (en) * 2017-09-15 2019-03-21 Glo Ab Etendue enhancement for light emitting diode subpixels

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000002733A (ko) 1998-06-23 2000-01-15 구자홍 광자기 기록 매체
CN103022282B (zh) 2008-07-07 2016-02-03 格罗有限公司 纳米结构led
CN102903804B (zh) * 2011-07-25 2015-12-16 财团法人工业技术研究院 发光元件的转移方法以及发光元件阵列
US8350251B1 (en) 2011-09-26 2013-01-08 Glo Ab Nanowire sized opto-electronic structure and method for manufacturing the same
US8809875B2 (en) * 2011-11-18 2014-08-19 LuxVue Technology Corporation Micro light emitting diode
CN104769732A (zh) 2012-09-18 2015-07-08 Glo公司 纳米角锥体大小的光电子结构及其制造方法
TWI621278B (zh) 2013-12-17 2018-04-11 瑞典商Glo公司 具有應變改質表面活性區域之第三族氮化物奈米線led及其製造方法
WO2016100657A2 (en) 2014-12-19 2016-06-23 Glo Ab Method of making a light emitting diode array on a backplane
EP3387882B1 (en) * 2015-12-07 2021-05-12 Glo Ab Laser lift-off on isolated iii-nitride light islands for inter-substrate led transfer
US10714464B2 (en) 2016-02-16 2020-07-14 Glo Ab Method of selectively transferring LED die to a backplane using height controlled bonding structures
WO2017175051A1 (en) 2016-04-04 2017-10-12 Glo Ab Through backplane laser irradiation for die transfer
US10236447B2 (en) 2016-05-24 2019-03-19 Glo Ab Selective die repair on a light emitting device assembly
US10325893B2 (en) * 2016-12-13 2019-06-18 Hong Kong Beida Jade Bird Display Limited Mass transfer of micro structures using adhesives
KR102468071B1 (ko) * 2017-01-09 2022-11-17 글로 에이비 다이렉트 뷰 디스플레이를 위한 집적 반사기를 갖는 발광 다이오드 및 이의 제조 방법
DE102017100812B4 (de) * 2017-01-17 2024-04-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
TWI756384B (zh) * 2017-03-16 2022-03-01 美商康寧公司 用於大量轉移微型led的方法及製程
US11024611B1 (en) * 2017-06-09 2021-06-01 Goertek, Inc. Micro-LED array transfer method, manufacturing method and display device
US11362238B2 (en) 2017-10-06 2022-06-14 Nanosys, Inc. Light emitting diode containing oxidized metal contacts
TWI650854B (zh) 2017-10-31 2019-02-11 英屬開曼群島商錼創科技股份有限公司 微型發光二極體顯示面板及其製造方法
TWI635605B (zh) 2017-11-02 2018-09-11 Pixeled Display Co., Ltd. 微型發光二極體顯示面板
US11404400B2 (en) * 2018-01-24 2022-08-02 Apple Inc. Micro LED based display panel
KR102433873B1 (ko) * 2018-01-29 2022-08-19 삼성전자주식회사 Led 패널 및 led 패널의 제조 방법
US11069837B2 (en) * 2018-04-20 2021-07-20 Glo Ab Sub pixel light emitting diodes for direct view display and methods of making the same
US11024220B2 (en) * 2018-05-31 2021-06-01 Invensas Corporation Formation of a light-emitting diode display
CN108807265B (zh) * 2018-07-09 2020-01-31 厦门乾照光电股份有限公司 Micro-LED巨量转移方法、显示装置及制作方法
KR102617962B1 (ko) * 2018-10-02 2023-12-27 삼성전자주식회사 반도체 발광소자
US11158761B2 (en) * 2019-05-07 2021-10-26 Facebook Technologies, Llc Bonding methods for light emitting diodes
KR102881826B1 (ko) * 2019-12-19 2025-11-07 엘지전자 주식회사 발광 소자를 이용한 디스플레이 장치 및 그 제조 방법
JP7153183B2 (ja) * 2020-01-29 2022-10-14 日亜化学工業株式会社 発光装置の製造方法
CN115989590A (zh) 2020-05-18 2023-04-18 纳诺西斯有限公司 用于直视型显示器的次像素发光二极管及其制造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190088820A1 (en) * 2017-09-15 2019-03-21 Glo Ab Etendue enhancement for light emitting diode subpixels

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Publication number Publication date
KR20230013072A (ko) 2023-01-26
EP4154324A4 (en) 2024-06-12
EP4154324A1 (en) 2023-03-29
US11973172B2 (en) 2024-04-30
TWI893113B (zh) 2025-08-11
US12439757B2 (en) 2025-10-07
WO2021236382A1 (en) 2021-11-25
TW202209626A (zh) 2022-03-01
CN115989590A (zh) 2023-04-18
JP2023526833A (ja) 2023-06-23
EP4154324B1 (en) 2026-01-21
US20210359186A1 (en) 2021-11-18
US20240274772A1 (en) 2024-08-15
JP7611271B2 (ja) 2025-01-09

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