KR102943365B1 - 처리 방법 및 플라즈마 처리 장치 - Google Patents

처리 방법 및 플라즈마 처리 장치

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Publication number
KR102943365B1
KR102943365B1 KR1020247005759A KR20247005759A KR102943365B1 KR 102943365 B1 KR102943365 B1 KR 102943365B1 KR 1020247005759 A KR1020247005759 A KR 1020247005759A KR 20247005759 A KR20247005759 A KR 20247005759A KR 102943365 B1 KR102943365 B1 KR 102943365B1
Authority
KR
South Korea
Prior art keywords
heat transfer
mounting surface
transfer layer
wafer
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020247005759A
Other languages
English (en)
Korean (ko)
Other versions
KR20240038027A (ko
Inventor
가즈야 나가세키
가즈키 모야마
신지 히모리
마사노부 혼다
사토루 데루우치
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Priority to KR1020267008615A priority Critical patent/KR20260046245A/ko
Publication of KR20240038027A publication Critical patent/KR20240038027A/ko
Application granted granted Critical
Publication of KR102943365B1 publication Critical patent/KR102943365B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1020247005759A 2021-08-03 2022-07-27 처리 방법 및 플라즈마 처리 장치 Active KR102943365B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020267008615A KR20260046245A (ko) 2021-08-03 2022-07-27 처리 방법 및 플라즈마 처리 장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2021-127619 2021-08-03
JP2021127619 2021-08-03
PCT/JP2022/029016 WO2023013506A1 (ja) 2021-08-03 2022-07-27 処理方法及びプラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020267008615A Division KR20260046245A (ko) 2021-08-03 2022-07-27 처리 방법 및 플라즈마 처리 장치

Publications (2)

Publication Number Publication Date
KR20240038027A KR20240038027A (ko) 2024-03-22
KR102943365B1 true KR102943365B1 (ko) 2026-03-23

Family

ID=85154568

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020247005759A Active KR102943365B1 (ko) 2021-08-03 2022-07-27 처리 방법 및 플라즈마 처리 장치
KR1020267008615A Pending KR20260046245A (ko) 2021-08-03 2022-07-27 처리 방법 및 플라즈마 처리 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020267008615A Pending KR20260046245A (ko) 2021-08-03 2022-07-27 처리 방법 및 플라즈마 처리 장치

Country Status (6)

Country Link
US (1) US20240194459A1 (https=)
JP (1) JP7850727B2 (https=)
KR (2) KR102943365B1 (https=)
CN (1) CN117769755A (https=)
TW (1) TW202310046A (https=)
WO (1) WO2023013506A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115440558A (zh) * 2021-06-03 2022-12-06 长鑫存储技术有限公司 半导体蚀刻设备
TW202331780A (zh) * 2021-09-15 2023-08-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法
KR20260009820A (ko) * 2023-05-11 2026-01-20 고쿠리츠다이가쿠호우진 도쿄다이가쿠 기판 처리 장치 및 기판 보지 방법
CN121753538A (zh) * 2023-09-01 2026-03-27 东京毅力科创株式会社 基板处理装置和基板处理系统
JP7763278B2 (ja) * 2024-01-16 2025-10-31 日本特殊陶業株式会社 基板処理装置、サセプタ、および基板処理方法
WO2025205180A1 (ja) * 2024-03-27 2025-10-02 東京エレクトロン株式会社 プラズマ処理装置及び処理方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004140056A (ja) * 2002-10-16 2004-05-13 Nok Corp 静電チャック

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970003885B1 (ko) * 1987-12-25 1997-03-22 도오교오 에레구토론 가부시끼 가이샤 에칭 방법 및 그 장치
JP2000178749A (ja) * 1998-12-21 2000-06-27 Toshiba Mach Co Ltd プラズマｃｖｄ装置
JP4592916B2 (ja) * 2000-04-25 2010-12-08 東京エレクトロン株式会社 被処理体の載置装置
JP4421874B2 (ja) * 2003-10-31 2010-02-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5619486B2 (ja) * 2010-06-23 2014-11-05 東京エレクトロン株式会社 フォーカスリング、その製造方法及びプラズマ処理装置
US8852964B2 (en) * 2013-02-04 2014-10-07 Lam Research Corporation Controlling CD and CD uniformity with trim time and temperature on a wafer by wafer basis
JP6215002B2 (ja) * 2013-10-25 2017-10-18 東京エレクトロン株式会社 フォーカスリングの製造方法及びプラズマ処理装置の製造方法
CN106920725B (zh) * 2015-12-24 2018-10-12 中微半导体设备(上海)有限公司 一种聚焦环的温度调整装置及方法
JP2020120081A (ja) * 2019-01-28 2020-08-06 東京エレクトロン株式会社 基板処理装置
JP2021091102A (ja) * 2019-12-06 2021-06-17 スリーエム イノベイティブ プロパティズ カンパニー プラズマ装置用インフィリングシート、プラズマ装置用部品及びプラズマ装置
CN117813676A (zh) * 2021-08-03 2024-04-02 东京毅力科创株式会社 处理方法和等离子体处理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004140056A (ja) * 2002-10-16 2004-05-13 Nok Corp 静電チャック

Also Published As

Publication number Publication date
TW202310046A (zh) 2023-03-01
JPWO2023013506A1 (https=) 2023-02-09
KR20260046245A (ko) 2026-04-06
JP7850727B2 (ja) 2026-04-23
KR20240038027A (ko) 2024-03-22
WO2023013506A1 (ja) 2023-02-09
US20240194459A1 (en) 2024-06-13
CN117769755A (zh) 2024-03-26

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