JPWO2023013506A1 - - Google Patents
Info
- Publication number
- JPWO2023013506A1 JPWO2023013506A1 JP2023540293A JP2023540293A JPWO2023013506A1 JP WO2023013506 A1 JPWO2023013506 A1 JP WO2023013506A1 JP 2023540293 A JP2023540293 A JP 2023540293A JP 2023540293 A JP2023540293 A JP 2023540293A JP WO2023013506 A1 JPWO2023013506 A1 JP WO2023013506A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0432—Apparatus for thermal treatment mainly by conduction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021127619 | 2021-08-03 | ||
| JP2021127619 | 2021-08-03 | ||
| PCT/JP2022/029016 WO2023013506A1 (ja) | 2021-08-03 | 2022-07-27 | 処理方法及びプラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023013506A1 true JPWO2023013506A1 (https=) | 2023-02-09 |
| JPWO2023013506A5 JPWO2023013506A5 (https=) | 2026-01-26 |
| JP7850727B2 JP7850727B2 (ja) | 2026-04-23 |
Family
ID=85154568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023540293A Active JP7850727B2 (ja) | 2021-08-03 | 2022-07-27 | 処理方法及びプラズマ処理装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240194459A1 (https=) |
| JP (1) | JP7850727B2 (https=) |
| KR (2) | KR102943365B1 (https=) |
| CN (1) | CN117769755A (https=) |
| TW (1) | TW202310046A (https=) |
| WO (1) | WO2023013506A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115440558A (zh) * | 2021-06-03 | 2022-12-06 | 长鑫存储技术有限公司 | 半导体蚀刻设备 |
| TW202331780A (zh) * | 2021-09-15 | 2023-08-01 | 日商東京威力科創股份有限公司 | 電漿處理裝置及電漿處理方法 |
| KR20260009820A (ko) * | 2023-05-11 | 2026-01-20 | 고쿠리츠다이가쿠호우진 도쿄다이가쿠 | 기판 처리 장치 및 기판 보지 방법 |
| CN121753538A (zh) * | 2023-09-01 | 2026-03-27 | 东京毅力科创株式会社 | 基板处理装置和基板处理系统 |
| JP7763278B2 (ja) * | 2024-01-16 | 2025-10-31 | 日本特殊陶業株式会社 | 基板処理装置、サセプタ、および基板処理方法 |
| WO2025205180A1 (ja) * | 2024-03-27 | 2025-10-02 | 東京エレクトロン株式会社 | プラズマ処理装置及び処理方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000178749A (ja) * | 1998-12-21 | 2000-06-27 | Toshiba Mach Co Ltd | プラズマｃｖｄ装置 |
| JP2004140056A (ja) * | 2002-10-16 | 2004-05-13 | Nok Corp | 静電チャック |
| JP2015084383A (ja) * | 2013-10-25 | 2015-04-30 | 東京エレクトロン株式会社 | フォーカスリング及びプラズマ処理装置 |
| JP2021091102A (ja) * | 2019-12-06 | 2021-06-17 | スリーエム イノベイティブ プロパティズ カンパニー | プラズマ装置用インフィリングシート、プラズマ装置用部品及びプラズマ装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970003885B1 (ko) * | 1987-12-25 | 1997-03-22 | 도오교오 에레구토론 가부시끼 가이샤 | 에칭 방법 및 그 장치 |
| JP4592916B2 (ja) * | 2000-04-25 | 2010-12-08 | 東京エレクトロン株式会社 | 被処理体の載置装置 |
| JP4421874B2 (ja) * | 2003-10-31 | 2010-02-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP5619486B2 (ja) * | 2010-06-23 | 2014-11-05 | 東京エレクトロン株式会社 | フォーカスリング、その製造方法及びプラズマ処理装置 |
| US8852964B2 (en) * | 2013-02-04 | 2014-10-07 | Lam Research Corporation | Controlling CD and CD uniformity with trim time and temperature on a wafer by wafer basis |
| CN106920725B (zh) * | 2015-12-24 | 2018-10-12 | 中微半导体设备(上海)有限公司 | 一种聚焦环的温度调整装置及方法 |
| JP2020120081A (ja) * | 2019-01-28 | 2020-08-06 | 東京エレクトロン株式会社 | 基板処理装置 |
| CN117813676A (zh) * | 2021-08-03 | 2024-04-02 | 东京毅力科创株式会社 | 处理方法和等离子体处理装置 |
-
2022
- 2022-07-27 JP JP2023540293A patent/JP7850727B2/ja active Active
- 2022-07-27 WO PCT/JP2022/029016 patent/WO2023013506A1/ja not_active Ceased
- 2022-07-27 KR KR1020247005759A patent/KR102943365B1/ko active Active
- 2022-07-27 KR KR1020267008615A patent/KR20260046245A/ko active Pending
- 2022-07-27 CN CN202280052235.8A patent/CN117769755A/zh active Pending
- 2022-08-02 TW TW111128911A patent/TW202310046A/zh unknown
-
2024
- 2024-01-18 US US18/416,880 patent/US20240194459A1/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000178749A (ja) * | 1998-12-21 | 2000-06-27 | Toshiba Mach Co Ltd | プラズマｃｖｄ装置 |
| JP2004140056A (ja) * | 2002-10-16 | 2004-05-13 | Nok Corp | 静電チャック |
| JP2015084383A (ja) * | 2013-10-25 | 2015-04-30 | 東京エレクトロン株式会社 | フォーカスリング及びプラズマ処理装置 |
| JP2021091102A (ja) * | 2019-12-06 | 2021-06-17 | スリーエム イノベイティブ プロパティズ カンパニー | プラズマ装置用インフィリングシート、プラズマ装置用部品及びプラズマ装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202310046A (zh) | 2023-03-01 |
| KR20260046245A (ko) | 2026-04-06 |
| JP7850727B2 (ja) | 2026-04-23 |
| KR102943365B1 (ko) | 2026-03-23 |
| KR20240038027A (ko) | 2024-03-22 |
| WO2023013506A1 (ja) | 2023-02-09 |
| US20240194459A1 (en) | 2024-06-13 |
| CN117769755A (zh) | 2024-03-26 |
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