JP7850727B2 - 処理方法及びプラズマ処理装置 - Google Patents

処理方法及びプラズマ処理装置

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Publication number
JP7850727B2
JP7850727B2 JP2023540293A JP2023540293A JP7850727B2 JP 7850727 B2 JP7850727 B2 JP 7850727B2 JP 2023540293 A JP2023540293 A JP 2023540293A JP 2023540293 A JP2023540293 A JP 2023540293A JP 7850727 B2 JP7850727 B2 JP 7850727B2
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JP
Japan
Prior art keywords
heat transfer
transfer layer
wafer
mounting surface
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023540293A
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English (en)
Japanese (ja)
Other versions
JPWO2023013506A5 (https=
JPWO2023013506A1 (https=
Inventor
一也 永関
和基 茂山
慎司 檜森
昌伸 本田
怜 照内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2023013506A1 publication Critical patent/JPWO2023013506A1/ja
Publication of JPWO2023013506A5 publication Critical patent/JPWO2023013506A5/ja
Application granted granted Critical
Publication of JP7850727B2 publication Critical patent/JP7850727B2/ja
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Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2023540293A 2021-08-03 2022-07-27 処理方法及びプラズマ処理装置 Active JP7850727B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021127619 2021-08-03
JP2021127619 2021-08-03
PCT/JP2022/029016 WO2023013506A1 (ja) 2021-08-03 2022-07-27 処理方法及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JPWO2023013506A1 JPWO2023013506A1 (https=) 2023-02-09
JPWO2023013506A5 JPWO2023013506A5 (https=) 2026-01-26
JP7850727B2 true JP7850727B2 (ja) 2026-04-23

Family

ID=85154568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023540293A Active JP7850727B2 (ja) 2021-08-03 2022-07-27 処理方法及びプラズマ処理装置

Country Status (6)

Country Link
US (1) US20240194459A1 (https=)
JP (1) JP7850727B2 (https=)
KR (2) KR102943365B1 (https=)
CN (1) CN117769755A (https=)
TW (1) TW202310046A (https=)
WO (1) WO2023013506A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115440558A (zh) * 2021-06-03 2022-12-06 长鑫存储技术有限公司 半导体蚀刻设备
TW202331780A (zh) * 2021-09-15 2023-08-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法
KR20260009820A (ko) * 2023-05-11 2026-01-20 고쿠리츠다이가쿠호우진 도쿄다이가쿠 기판 처리 장치 및 기판 보지 방법
CN121753538A (zh) * 2023-09-01 2026-03-27 东京毅力科创株式会社 基板处理装置和基板处理系统
JP7763278B2 (ja) * 2024-01-16 2025-10-31 日本特殊陶業株式会社 基板処理装置、サセプタ、および基板処理方法
WO2025205180A1 (ja) * 2024-03-27 2025-10-02 東京エレクトロン株式会社 プラズマ処理装置及び処理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000178749A (ja) 1998-12-21 2000-06-27 Toshiba Mach Co Ltd プラズマｃｖｄ装置
JP2004140056A (ja) 2002-10-16 2004-05-13 Nok Corp 静電チャック
JP2015084383A (ja) 2013-10-25 2015-04-30 東京エレクトロン株式会社 フォーカスリング及びプラズマ処理装置
JP2021091102A (ja) 2019-12-06 2021-06-17 スリーエム イノベイティブ プロパティズ カンパニー プラズマ装置用インフィリングシート、プラズマ装置用部品及びプラズマ装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970003885B1 (ko) * 1987-12-25 1997-03-22 도오교오 에레구토론 가부시끼 가이샤 에칭 방법 및 그 장치
JP4592916B2 (ja) * 2000-04-25 2010-12-08 東京エレクトロン株式会社 被処理体の載置装置
JP4421874B2 (ja) * 2003-10-31 2010-02-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5619486B2 (ja) * 2010-06-23 2014-11-05 東京エレクトロン株式会社 フォーカスリング、その製造方法及びプラズマ処理装置
US8852964B2 (en) * 2013-02-04 2014-10-07 Lam Research Corporation Controlling CD and CD uniformity with trim time and temperature on a wafer by wafer basis
CN106920725B (zh) * 2015-12-24 2018-10-12 中微半导体设备(上海)有限公司 一种聚焦环的温度调整装置及方法
JP2020120081A (ja) * 2019-01-28 2020-08-06 東京エレクトロン株式会社 基板処理装置
CN117813676A (zh) * 2021-08-03 2024-04-02 东京毅力科创株式会社 处理方法和等离子体处理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000178749A (ja) 1998-12-21 2000-06-27 Toshiba Mach Co Ltd プラズマｃｖｄ装置
JP2004140056A (ja) 2002-10-16 2004-05-13 Nok Corp 静電チャック
JP2015084383A (ja) 2013-10-25 2015-04-30 東京エレクトロン株式会社 フォーカスリング及びプラズマ処理装置
JP2021091102A (ja) 2019-12-06 2021-06-17 スリーエム イノベイティブ プロパティズ カンパニー プラズマ装置用インフィリングシート、プラズマ装置用部品及びプラズマ装置

Also Published As

Publication number Publication date
TW202310046A (zh) 2023-03-01
JPWO2023013506A1 (https=) 2023-02-09
KR20260046245A (ko) 2026-04-06
KR102943365B1 (ko) 2026-03-23
KR20240038027A (ko) 2024-03-22
WO2023013506A1 (ja) 2023-02-09
US20240194459A1 (en) 2024-06-13
CN117769755A (zh) 2024-03-26

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