KR102941913B1 - 플라즈마 처리 시스템 및 기판을 화학적으로 처리하는 방법 - Google Patents

플라즈마 처리 시스템 및 기판을 화학적으로 처리하는 방법

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Publication number
KR102941913B1
KR102941913B1 KR1020237008198A KR20237008198A KR102941913B1 KR 102941913 B1 KR102941913 B1 KR 102941913B1 KR 1020237008198 A KR1020237008198 A KR 1020237008198A KR 20237008198 A KR20237008198 A KR 20237008198A KR 102941913 B1 KR102941913 B1 KR 102941913B1
Authority
KR
South Korea
Prior art keywords
plenum
radical
radical source
source chamber
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020237008198A
Other languages
English (en)
Korean (ko)
Other versions
KR20230051219A (ko
Inventor
피터 벤트젝
알록 란잔
미츠노리 오하타
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR20230051219A publication Critical patent/KR20230051219A/ko
Application granted granted Critical
Publication of KR102941913B1 publication Critical patent/KR102941913B1/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020237008198A 2020-08-26 2021-08-17 플라즈마 처리 시스템 및 기판을 화학적으로 처리하는 방법 Active KR102941913B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/003,734 US11521834B2 (en) 2020-08-26 2020-08-26 Plasma processing systems and methods for chemical processing a substrate
US17/003,734 2020-08-26
PCT/US2021/046224 WO2022046461A1 (en) 2020-08-26 2021-08-17 Plasma processing systems and methods for chemical processing a substrate

Publications (2)

Publication Number Publication Date
KR20230051219A KR20230051219A (ko) 2023-04-17
KR102941913B1 true KR102941913B1 (ko) 2026-03-19

Family

ID=80355588

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237008198A Active KR102941913B1 (ko) 2020-08-26 2021-08-17 플라즈마 처리 시스템 및 기판을 화학적으로 처리하는 방법

Country Status (5)

Country Link
US (1) US11521834B2 (https=)
JP (1) JP7692147B2 (https=)
KR (1) KR102941913B1 (https=)
TW (1) TWI912349B (https=)
WO (1) WO2022046461A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102816359B1 (ko) * 2022-04-28 2025-06-02 아주대학교산학협력단 지르코니아 표면 처리방법
US12394600B2 (en) * 2023-04-28 2025-08-19 Tokyo Electron Limited Balanced RF resonant antenna system
JP7422448B1 (ja) 2023-10-20 2024-01-26 株式会社Dr.Visea プラズマ照射装置
US12580153B2 (en) 2024-01-12 2026-03-17 Tokyo Electron Limited Balanced resonator source for plasma processing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266006A (ja) * 2007-06-20 2007-10-11 Hitachi Kokusai Electric Inc プラズマリアクター
JP2018037546A (ja) 2016-08-31 2018-03-08 株式会社ディスコ プラズマエッチング装置

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JPH0791655B2 (ja) * 1990-08-01 1995-10-04 日電アネルバ株式会社 表面処理方法および装置
JP4073174B2 (ja) * 2001-03-26 2008-04-09 株式会社荏原製作所 中性粒子ビーム処理装置
JP4101089B2 (ja) * 2003-03-14 2008-06-11 株式会社荏原製作所 ビーム源及びビーム処理装置
US20040221959A1 (en) * 2003-05-09 2004-11-11 Applied Materials, Inc. Anodized substrate support
JP4674512B2 (ja) * 2005-09-12 2011-04-20 パナソニック株式会社 プラズマ処理装置
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8382939B2 (en) 2009-07-13 2013-02-26 Applied Materials, Inc. Plasma processing chamber with enhanced gas delivery
JP4855506B2 (ja) 2009-09-15 2012-01-18 住友精密工業株式会社 プラズマエッチング装置
KR101495288B1 (ko) * 2012-06-04 2015-02-24 피에스케이 주식회사 기판 처리 장치 및 방법
JP6172660B2 (ja) * 2012-08-23 2017-08-02 東京エレクトロン株式会社 成膜装置、及び、低誘電率膜を形成する方法
TW201435138A (zh) 2012-12-21 2014-09-16 Applied Materials Inc 具高清洗效率的對稱氣體分配設備及方法
KR20140089458A (ko) * 2013-01-04 2014-07-15 피에스케이 주식회사 플라즈마 챔버 및 기판 처리 장치
US10580623B2 (en) * 2013-11-19 2020-03-03 Applied Materials, Inc. Plasma processing using multiple radio frequency power feeds for improved uniformity
US11001926B2 (en) * 2014-01-15 2021-05-11 Gallium Enterprises Pty Ltd Apparatus and method for the reduction of impurities in films
KR20180094109A (ko) * 2016-01-07 2018-08-22 어플라이드 머티어리얼스, 인코포레이티드 원격 플라즈마 소스 및 dc 전극을 구비하는 원자 층 에칭 시스템
US11694911B2 (en) 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
US20190198301A1 (en) * 2017-12-27 2019-06-27 Mattson Technology, Inc. Plasma Processing Apparatus and Methods
KR102952863B1 (ko) 2018-09-10 2026-04-14 램 리써치 코포레이션 준안정 (metastable) 활성화된 라디칼 종을 사용한 원자 층 처리 프로세스
US11348784B2 (en) * 2019-08-12 2022-05-31 Beijing E-Town Semiconductor Technology Co., Ltd Enhanced ignition in inductively coupled plasmas for workpiece processing
WO2021162932A1 (en) * 2020-02-10 2021-08-19 Applied Materials, Inc. Methods and apparatus for improving flow uniformity in a process chamber

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266006A (ja) * 2007-06-20 2007-10-11 Hitachi Kokusai Electric Inc プラズマリアクター
JP2018037546A (ja) 2016-08-31 2018-03-08 株式会社ディスコ プラズマエッチング装置

Also Published As

Publication number Publication date
US20220068601A1 (en) 2022-03-03
KR20230051219A (ko) 2023-04-17
JP7692147B2 (ja) 2025-06-13
WO2022046461A1 (en) 2022-03-03
TW202226321A (zh) 2022-07-01
US11521834B2 (en) 2022-12-06
JP2023540213A (ja) 2023-09-22
TWI912349B (zh) 2026-01-21

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