TWI912349B - 基板化學處理用電漿處理系統及方法 - Google Patents

基板化學處理用電漿處理系統及方法

Info

Publication number
TWI912349B
TWI912349B TW110131184A TW110131184A TWI912349B TW I912349 B TWI912349 B TW I912349B TW 110131184 A TW110131184 A TW 110131184A TW 110131184 A TW110131184 A TW 110131184A TW I912349 B TWI912349 B TW I912349B
Authority
TW
Taiwan
Prior art keywords
free radical
radical source
source chamber
chamber
substrate
Prior art date
Application number
TW110131184A
Other languages
English (en)
Chinese (zh)
Other versions
TW202226321A (zh
Inventor
彼得 凡特薩克
艾洛克 蘭傑
大秦充敬
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202226321A publication Critical patent/TW202226321A/zh
Application granted granted Critical
Publication of TWI912349B publication Critical patent/TWI912349B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
TW110131184A 2020-08-26 2021-08-24 基板化學處理用電漿處理系統及方法 TWI912349B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/003,734 US11521834B2 (en) 2020-08-26 2020-08-26 Plasma processing systems and methods for chemical processing a substrate
US17/003,734 2020-08-26

Publications (2)

Publication Number Publication Date
TW202226321A TW202226321A (zh) 2022-07-01
TWI912349B true TWI912349B (zh) 2026-01-21

Family

ID=80355588

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110131184A TWI912349B (zh) 2020-08-26 2021-08-24 基板化學處理用電漿處理系統及方法

Country Status (5)

Country Link
US (1) US11521834B2 (https=)
JP (1) JP7692147B2 (https=)
KR (1) KR102941913B1 (https=)
TW (1) TWI912349B (https=)
WO (1) WO2022046461A1 (https=)

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Publication number Priority date Publication date Assignee Title
KR102816359B1 (ko) * 2022-04-28 2025-06-02 아주대학교산학협력단 지르코니아 표면 처리방법
US12394600B2 (en) * 2023-04-28 2025-08-19 Tokyo Electron Limited Balanced RF resonant antenna system
JP7422448B1 (ja) 2023-10-20 2024-01-26 株式会社Dr.Visea プラズマ照射装置
US12580153B2 (en) 2024-01-12 2026-03-17 Tokyo Electron Limited Balanced resonator source for plasma processing

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TW201429323A (zh) * 2013-01-04 2014-07-16 Psk Inc 電漿腔室及基板處理設備
US20150214015A1 (en) * 2012-08-23 2015-07-30 Tohoku University FILM FORMING APPARATUS, METHOD OF FORMING LOW-PERMITTIVITY FILM, SiCO FILM, AND DAMASCENE INTERCONNECT STRUCTURE
TW201929034A (zh) * 2017-12-27 2019-07-16 美商瑪森科技公司 電漿處理裝置及其方法

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JP4073174B2 (ja) * 2001-03-26 2008-04-09 株式会社荏原製作所 中性粒子ビーム処理装置
JP4101089B2 (ja) * 2003-03-14 2008-06-11 株式会社荏原製作所 ビーム源及びビーム処理装置
US20040221959A1 (en) * 2003-05-09 2004-11-11 Applied Materials, Inc. Anodized substrate support
JP4674512B2 (ja) * 2005-09-12 2011-04-20 パナソニック株式会社 プラズマ処理装置
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
JP2007266006A (ja) * 2007-06-20 2007-10-11 Hitachi Kokusai Electric Inc プラズマリアクター
US8382939B2 (en) 2009-07-13 2013-02-26 Applied Materials, Inc. Plasma processing chamber with enhanced gas delivery
JP4855506B2 (ja) 2009-09-15 2012-01-18 住友精密工業株式会社 プラズマエッチング装置
KR101495288B1 (ko) * 2012-06-04 2015-02-24 피에스케이 주식회사 기판 처리 장치 및 방법
TW201435138A (zh) 2012-12-21 2014-09-16 Applied Materials Inc 具高清洗效率的對稱氣體分配設備及方法
US10580623B2 (en) * 2013-11-19 2020-03-03 Applied Materials, Inc. Plasma processing using multiple radio frequency power feeds for improved uniformity
US11001926B2 (en) * 2014-01-15 2021-05-11 Gallium Enterprises Pty Ltd Apparatus and method for the reduction of impurities in films
KR20180094109A (ko) * 2016-01-07 2018-08-22 어플라이드 머티어리얼스, 인코포레이티드 원격 플라즈마 소스 및 dc 전극을 구비하는 원자 층 에칭 시스템
JP6746209B2 (ja) * 2016-08-31 2020-08-26 株式会社ディスコ プラズマエッチング装置
US11694911B2 (en) 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
KR102952863B1 (ko) 2018-09-10 2026-04-14 램 리써치 코포레이션 준안정 (metastable) 활성화된 라디칼 종을 사용한 원자 층 처리 프로세스
US11348784B2 (en) * 2019-08-12 2022-05-31 Beijing E-Town Semiconductor Technology Co., Ltd Enhanced ignition in inductively coupled plasmas for workpiece processing
WO2021162932A1 (en) * 2020-02-10 2021-08-19 Applied Materials, Inc. Methods and apparatus for improving flow uniformity in a process chamber

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US20150214015A1 (en) * 2012-08-23 2015-07-30 Tohoku University FILM FORMING APPARATUS, METHOD OF FORMING LOW-PERMITTIVITY FILM, SiCO FILM, AND DAMASCENE INTERCONNECT STRUCTURE
TW201429323A (zh) * 2013-01-04 2014-07-16 Psk Inc 電漿腔室及基板處理設備
TW201929034A (zh) * 2017-12-27 2019-07-16 美商瑪森科技公司 電漿處理裝置及其方法

Also Published As

Publication number Publication date
US20220068601A1 (en) 2022-03-03
KR20230051219A (ko) 2023-04-17
JP7692147B2 (ja) 2025-06-13
WO2022046461A1 (en) 2022-03-03
TW202226321A (zh) 2022-07-01
US11521834B2 (en) 2022-12-06
JP2023540213A (ja) 2023-09-22
KR102941913B1 (ko) 2026-03-19

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