KR102922299B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법

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Publication number
KR102922299B1
KR102922299B1 KR1020190137752A KR20190137752A KR102922299B1 KR 102922299 B1 KR102922299 B1 KR 102922299B1 KR 1020190137752 A KR1020190137752 A KR 1020190137752A KR 20190137752 A KR20190137752 A KR 20190137752A KR 102922299 B1 KR102922299 B1 KR 102922299B1
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KR
South Korea
Prior art keywords
period
voltage
plasma
chamber
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
KR1020190137752A
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English (en)
Korean (ko)
Other versions
KR20200051487A (ko
Inventor
고이치 나가미
가즈야 나가세키
신지 히모리
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20200051487A publication Critical patent/KR20200051487A/ko
Priority to KR1020260017787A priority Critical patent/KR20260027202A/ko
Application granted granted Critical
Publication of KR102922299B1 publication Critical patent/KR102922299B1/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/248—Components associated with high voltage supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020190137752A 2018-11-05 2019-10-31 플라즈마 처리 장치 및 플라즈마 처리 방법 Active KR102922299B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020260017787A KR20260027202A (ko) 2018-11-05 2026-01-29 플라즈마 처리 장치 및 플라즈마 처리 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2018-208007 2018-11-05
JP2018208007A JP7068140B2 (ja) 2018-11-05 2018-11-05 プラズマ処理装置及びプラズマ処理方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020260017787A Division KR20260027202A (ko) 2018-11-05 2026-01-29 플라즈마 처리 장치 및 플라즈마 처리 방법

Publications (2)

Publication Number Publication Date
KR20200051487A KR20200051487A (ko) 2020-05-13
KR102922299B1 true KR102922299B1 (ko) 2026-02-03

Family

ID=70458108

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020190137752A Active KR102922299B1 (ko) 2018-11-05 2019-10-31 플라즈마 처리 장치 및 플라즈마 처리 방법
KR1020260017787A Pending KR20260027202A (ko) 2018-11-05 2026-01-29 플라즈마 처리 장치 및 플라즈마 처리 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020260017787A Pending KR20260027202A (ko) 2018-11-05 2026-01-29 플라즈마 처리 장치 및 플라즈마 처리 방법

Country Status (6)

Country Link
US (2) US12255049B2 (https=)
JP (2) JP7068140B2 (https=)
KR (2) KR102922299B1 (https=)
CN (1) CN111146061B (https=)
SG (1) SG10201910303SA (https=)
TW (1) TWI826565B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112012898B (zh) * 2020-08-12 2021-08-10 北京控制工程研究所 一种低功率霍尔推力器用通道外置式分配器阳极一体化结构
US12211677B2 (en) * 2021-07-21 2025-01-28 Applied Materials, Inc. Uniformity control for plasma processing
JPWO2023149070A1 (https=) * 2022-02-03 2023-08-10

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JPH104085A (ja) * 1996-06-18 1998-01-06 Sony Corp ドライエッチング方法および装置
JPH1079372A (ja) * 1996-09-03 1998-03-24 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
JP4013271B2 (ja) * 1997-01-16 2007-11-28 日新電機株式会社 物品表面処理方法及び装置
JPH11224796A (ja) * 1998-02-05 1999-08-17 Matsushita Electron Corp プラズマ処理装置及びプラズマ処理方法
US20070215180A1 (en) * 2006-03-15 2007-09-20 Tokyo Electron Limited Cleaning method of substrate processing equipment, substrate processing equipment, and recording medium for recording program thereof
JP4827567B2 (ja) * 2006-03-16 2011-11-30 東京エレクトロン株式会社 プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体
US20090004836A1 (en) * 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
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JP5294681B2 (ja) * 2008-04-28 2013-09-18 東京エレクトロン株式会社 基板処理装置及びその基板搬送方法
JP5295833B2 (ja) * 2008-09-24 2013-09-18 株式会社東芝 基板処理装置および基板処理方法
JP5221403B2 (ja) * 2009-01-26 2013-06-26 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置および記憶媒体
US8383001B2 (en) * 2009-02-20 2013-02-26 Tokyo Electron Limited Plasma etching method, plasma etching apparatus and storage medium
JP5674280B2 (ja) * 2009-03-02 2015-02-25 東京エレクトロン株式会社 プラズマ処理装置
KR101361217B1 (ko) * 2009-09-29 2014-02-10 가부시끼가이샤 도시바 기판 처리 장치 및 기판 처리 방법
KR101214758B1 (ko) * 2010-02-26 2012-12-21 성균관대학교산학협력단 식각 방법
JP5172928B2 (ja) * 2010-09-30 2013-03-27 株式会社東芝 基板処理方法および基板処理装置
JP5405504B2 (ja) * 2011-01-31 2014-02-05 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
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EP2950333B1 (en) * 2014-02-28 2018-01-31 ULVAC, Inc. Plasma etching method, plasma etching device, plasma processing method, and plasma processing device
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KR102222902B1 (ko) * 2014-05-12 2021-03-05 삼성전자주식회사 플라즈마 장비 및 이를 이용한 반도체 소자의 제조 방법
KR20160022458A (ko) * 2014-08-19 2016-03-02 삼성전자주식회사 플라즈마 장비 및 이의 동작 방법
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KR20190014623A (ko) * 2017-08-03 2019-02-13 삼성전자주식회사 플라즈마 공정 장치 및 이를 이용한 반도체 장치 제조 방법
JP7134695B2 (ja) * 2018-04-27 2022-09-12 東京エレクトロン株式会社 プラズマ処理装置、及び電源制御方法
KR102600003B1 (ko) * 2018-10-30 2023-11-09 삼성전자주식회사 반도체 공정 챔버 및 반도체 소자의 제조 방법
JP7481823B2 (ja) * 2018-11-05 2024-05-13 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置

Also Published As

Publication number Publication date
TWI826565B (zh) 2023-12-21
TW202025289A (zh) 2020-07-01
US20250191877A1 (en) 2025-06-12
JP2022103235A (ja) 2022-07-07
KR20200051487A (ko) 2020-05-13
SG10201910303SA (en) 2020-06-29
US12255049B2 (en) 2025-03-18
KR20260027202A (ko) 2026-02-27
JP2020077657A (ja) 2020-05-21
JP7366188B2 (ja) 2023-10-20
US20200144028A1 (en) 2020-05-07
JP7068140B2 (ja) 2022-05-16
CN111146061B (zh) 2024-11-08
CN111146061A (zh) 2020-05-12

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