TWI826565B - 電漿處理裝置及電漿處理方法 - Google Patents

電漿處理裝置及電漿處理方法 Download PDF

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Publication number
TWI826565B
TWI826565B TW108139439A TW108139439A TWI826565B TW I826565 B TWI826565 B TW I826565B TW 108139439 A TW108139439 A TW 108139439A TW 108139439 A TW108139439 A TW 108139439A TW I826565 B TWI826565 B TW I826565B
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Taiwan
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period
voltage
plasma
lower electrode
power supply
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TW108139439A
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English (en)
Chinese (zh)
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TW202025289A (zh
Inventor
永海幸一
永関一也
檜森慎司
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/248—Components associated with high voltage supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW108139439A 2018-11-05 2019-10-31 電漿處理裝置及電漿處理方法 TWI826565B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-208007 2018-11-05
JP2018208007A JP7068140B2 (ja) 2018-11-05 2018-11-05 プラズマ処理装置及びプラズマ処理方法

Publications (2)

Publication Number Publication Date
TW202025289A TW202025289A (zh) 2020-07-01
TWI826565B true TWI826565B (zh) 2023-12-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW108139439A TWI826565B (zh) 2018-11-05 2019-10-31 電漿處理裝置及電漿處理方法

Country Status (6)

Country Link
US (2) US12255049B2 (https=)
JP (2) JP7068140B2 (https=)
KR (2) KR102922299B1 (https=)
CN (1) CN111146061B (https=)
SG (1) SG10201910303SA (https=)
TW (1) TWI826565B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112012898B (zh) * 2020-08-12 2021-08-10 北京控制工程研究所 一种低功率霍尔推力器用通道外置式分配器阳极一体化结构
US12211677B2 (en) * 2021-07-21 2025-01-28 Applied Materials, Inc. Uniformity control for plasma processing
JPWO2023149070A1 (https=) * 2022-02-03 2023-08-10

Citations (4)

* Cited by examiner, † Cited by third party
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JP2012079886A (ja) * 2010-09-30 2012-04-19 Toshiba Corp 基板処理方法および基盤処理装置
US20160056017A1 (en) * 2014-08-19 2016-02-25 Samsung Electronics Co., Ltd. Plasma apparatus and method of operating the same
US20170169997A1 (en) * 2014-02-28 2017-06-15 Ulvac, Inc. Plasma etching method, plasma etching device, plasma processing method, and plasma processing device
TW201739160A (zh) * 2016-02-29 2017-11-01 蘭姆研究公司 施加直流脈衝予電漿系統

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JPH104085A (ja) * 1996-06-18 1998-01-06 Sony Corp ドライエッチング方法および装置
JPH1079372A (ja) * 1996-09-03 1998-03-24 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
JP4013271B2 (ja) * 1997-01-16 2007-11-28 日新電機株式会社 物品表面処理方法及び装置
JPH11224796A (ja) * 1998-02-05 1999-08-17 Matsushita Electron Corp プラズマ処理装置及びプラズマ処理方法
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JP5213496B2 (ja) * 2008-03-31 2013-06-19 東京エレクトロン株式会社 プラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体
JP5294681B2 (ja) * 2008-04-28 2013-09-18 東京エレクトロン株式会社 基板処理装置及びその基板搬送方法
JP5295833B2 (ja) * 2008-09-24 2013-09-18 株式会社東芝 基板処理装置および基板処理方法
JP5221403B2 (ja) * 2009-01-26 2013-06-26 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置および記憶媒体
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KR102222902B1 (ko) * 2014-05-12 2021-03-05 삼성전자주식회사 플라즈마 장비 및 이를 이용한 반도체 소자의 제조 방법
KR101800321B1 (ko) * 2016-04-18 2017-11-22 최상준 건식 에칭장치
JP6832171B2 (ja) * 2017-01-24 2021-02-24 東京エレクトロン株式会社 プラズマ処理装置のチャンバ本体の内部のクリーニングを含むプラズマ処理方法
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JP2012079886A (ja) * 2010-09-30 2012-04-19 Toshiba Corp 基板処理方法および基盤処理装置
US20170169997A1 (en) * 2014-02-28 2017-06-15 Ulvac, Inc. Plasma etching method, plasma etching device, plasma processing method, and plasma processing device
US20160056017A1 (en) * 2014-08-19 2016-02-25 Samsung Electronics Co., Ltd. Plasma apparatus and method of operating the same
TW201739160A (zh) * 2016-02-29 2017-11-01 蘭姆研究公司 施加直流脈衝予電漿系統

Also Published As

Publication number Publication date
TW202025289A (zh) 2020-07-01
US20250191877A1 (en) 2025-06-12
JP2022103235A (ja) 2022-07-07
KR20200051487A (ko) 2020-05-13
SG10201910303SA (en) 2020-06-29
US12255049B2 (en) 2025-03-18
KR20260027202A (ko) 2026-02-27
JP2020077657A (ja) 2020-05-21
JP7366188B2 (ja) 2023-10-20
US20200144028A1 (en) 2020-05-07
JP7068140B2 (ja) 2022-05-16
CN111146061B (zh) 2024-11-08
CN111146061A (zh) 2020-05-12
KR102922299B1 (ko) 2026-02-03

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