KR102913190B1 - 위상 제어를 사용하여 플라즈마 분배를 조절하기 위한 디바이스 및 방법 - Google Patents

위상 제어를 사용하여 플라즈마 분배를 조절하기 위한 디바이스 및 방법

Info

Publication number
KR102913190B1
KR102913190B1 KR1020217017429A KR20217017429A KR102913190B1 KR 102913190 B1 KR102913190 B1 KR 102913190B1 KR 1020217017429 A KR1020217017429 A KR 1020217017429A KR 20217017429 A KR20217017429 A KR 20217017429A KR 102913190 B1 KR102913190 B1 KR 102913190B1
Authority
KR
South Korea
Prior art keywords
bowl
faceplate
support pedestal
ground
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217017429A
Other languages
English (en)
Korean (ko)
Other versions
KR20210080555A (ko
Inventor
샤오푸 리
칼롤 베라
에드워드 피. 아이브이 해먼드
종훈 백
아미트 쿠마르 반살
준 마
사토루 코바야시
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20210080555A publication Critical patent/KR20210080555A/ko
Application granted granted Critical
Publication of KR102913190B1 publication Critical patent/KR102913190B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020217017429A 2018-11-21 2019-10-24 위상 제어를 사용하여 플라즈마 분배를 조절하기 위한 디바이스 및 방법 Active KR102913190B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862770547P 2018-11-21 2018-11-21
US62/770,547 2018-11-21
PCT/US2019/057949 WO2020106408A1 (en) 2018-11-21 2019-10-24 Device and method for tuning plasma distribution using phase control

Publications (2)

Publication Number Publication Date
KR20210080555A KR20210080555A (ko) 2021-06-30
KR102913190B1 true KR102913190B1 (ko) 2026-01-14

Family

ID=70727094

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217017429A Active KR102913190B1 (ko) 2018-11-21 2019-10-24 위상 제어를 사용하여 플라즈마 분배를 조절하기 위한 디바이스 및 방법

Country Status (7)

Country Link
US (1) US11908662B2 (enExample)
JP (1) JP7465265B2 (enExample)
KR (1) KR102913190B1 (enExample)
CN (1) CN112955997B (enExample)
SG (1) SG11202103597SA (enExample)
TW (1) TWI835901B (enExample)
WO (1) WO2020106408A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240404789A1 (en) * 2021-10-18 2024-12-05 Lam Research Corporation Systems and methods for determining a phase difference between rf signals provided to electrodes
US12500106B2 (en) * 2022-05-03 2025-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation
US20240331979A1 (en) * 2023-04-03 2024-10-03 Tokyo Electron Limited Apparatus and Methods for Plasma Processing
US20260011900A1 (en) * 2024-07-06 2026-01-08 Applied Materials, Inc. Wideband tem to tm01 mode converter for microwave plasma systems

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000188286A (ja) * 1994-04-28 2000-07-04 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
KR100284571B1 (ko) * 1995-12-22 2001-04-02 조셉 제이. 스위니 세라믹 라이닝을 이용하여 cvd챔버 내의 잔류물 축적을 감소시키는 장치 및 방법
KR100522903B1 (ko) * 1996-07-12 2005-12-21 어플라이드 머티어리얼스, 인코포레이티드 화학 증착 챔버내의 가스 유동 경로에서 받침대 주변에 있는 구성부재
US20140265910A1 (en) * 2013-03-13 2014-09-18 Applied Materials, Inc. Digital phase controller for two-phase operation of a plasma reactor

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4557819A (en) * 1984-07-20 1985-12-10 Varian Associates, Inc. System for igniting and controlling a wafer processing plasma
JPH0627341B2 (ja) * 1988-02-05 1994-04-13 株式会社半導体エネルギー研究所 薄膜形成方法
JPH0747820B2 (ja) 1989-09-22 1995-05-24 株式会社日立製作所 成膜装置
JPH05205898A (ja) * 1991-07-24 1993-08-13 Tokyo Electron Yamanashi Kk プラズマ処理装置
US5314603A (en) 1991-07-24 1994-05-24 Tokyo Electron Yamanashi Limited Plasma processing apparatus capable of detecting and regulating actual RF power at electrode within chamber
JPH0613196A (ja) 1992-06-25 1994-01-21 Matsushita Electric Ind Co Ltd プラズマ発生方法および発生装置
KR100302167B1 (ko) * 1993-11-05 2001-11-22 히가시 데쓰로 플라즈마처리장치및플라즈마처리방법
JPH10237657A (ja) 1997-02-26 1998-09-08 Furontetsuku:Kk プラズマ処理装置
TW507256B (en) 2000-03-13 2002-10-21 Mitsubishi Heavy Ind Ltd Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
JP4672169B2 (ja) * 2001-04-05 2011-04-20 キヤノンアネルバ株式会社 プラズマ処理装置
US7972467B2 (en) * 2003-04-17 2011-07-05 Applied Materials Inc. Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor
JP4773079B2 (ja) 2004-11-26 2011-09-14 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法
US7988815B2 (en) * 2007-07-26 2011-08-02 Applied Materials, Inc. Plasma reactor with reduced electrical skew using electrical bypass elements
US20090236214A1 (en) * 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers
JP5396256B2 (ja) 2009-12-10 2014-01-22 東京エレクトロン株式会社 プラズマ処理装置
WO2011156650A2 (en) * 2010-06-10 2011-12-15 Applied Materials, Inc. Low resistivity tungsten pvd with enhanced ionization and rf power coupling
TWI661746B (zh) * 2011-10-05 2019-06-01 應用材料股份有限公司 電漿處理設備及其蓋組件（一）
US10224182B2 (en) * 2011-10-17 2019-03-05 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
US20130284369A1 (en) 2012-04-26 2013-10-31 Applied Materials, Inc. Two-phase operation of plasma chamber by phase locked loop
US9388494B2 (en) * 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US10125422B2 (en) * 2013-03-27 2018-11-13 Applied Materials, Inc. High impedance RF filter for heater with impedance tuning device
US9543158B2 (en) * 2014-12-04 2017-01-10 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
JP5800964B1 (ja) * 2014-07-22 2015-10-28 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
US10395895B2 (en) 2015-08-27 2019-08-27 Mks Instruments, Inc. Feedback control by RF waveform tailoring for ion energy distribution
WO2017184223A1 (en) * 2016-04-22 2017-10-26 Applied Materials, Inc. Substrate support pedestal having plasma confinement features
US10777386B2 (en) * 2017-10-17 2020-09-15 Lam Research Corporation Methods for controlling plasma glow discharge in a plasma chamber

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000188286A (ja) * 1994-04-28 2000-07-04 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
KR100284571B1 (ko) * 1995-12-22 2001-04-02 조셉 제이. 스위니 세라믹 라이닝을 이용하여 cvd챔버 내의 잔류물 축적을 감소시키는 장치 및 방법
KR100522903B1 (ko) * 1996-07-12 2005-12-21 어플라이드 머티어리얼스, 인코포레이티드 화학 증착 챔버내의 가스 유동 경로에서 받침대 주변에 있는 구성부재
US20140265910A1 (en) * 2013-03-13 2014-09-18 Applied Materials, Inc. Digital phase controller for two-phase operation of a plasma reactor

Also Published As

Publication number Publication date
US11908662B2 (en) 2024-02-20
KR20210080555A (ko) 2021-06-30
JP7465265B2 (ja) 2024-04-10
JP2022507782A (ja) 2022-01-18
CN112955997B (zh) 2024-04-05
SG11202103597SA (en) 2021-06-29
US20200161093A1 (en) 2020-05-21
TWI835901B (zh) 2024-03-21
WO2020106408A1 (en) 2020-05-28
CN112955997A (zh) 2021-06-11
TW202038292A (zh) 2020-10-16

Similar Documents

Publication Publication Date Title
CN112103164B (zh) 载置台和等离子体处理装置
US11276562B2 (en) Plasma processing using multiple radio frequency power feeds for improved uniformity
US11908662B2 (en) Device and method for tuning plasma distribution using phase control
KR102092623B1 (ko) 플라스마 처리 장치
KR101387067B1 (ko) 드라이 에칭 장치 및 드라이 에칭 방법
US6172321B1 (en) Method and apparatus for plasma processing apparatus
KR101094124B1 (ko) 균일한 프로세스 레이트를 발생시키는 안테나
KR102934462B1 (ko) 라디오 주파수 플라즈마 프로세싱 챔버에서의 왜곡 전류 완화
TWI448215B (zh) 電漿處理裝置
CN111048388B (zh) 基板处理装置及基板处理方法
EP0064163B1 (en) High speed plasma etching system
JP2021502688A (ja) 線形化されたエネルギーの無線周波数プラズマイオン供給源
TW202303753A (zh) 用於基板處理的脈衝電壓增壓
US9583313B2 (en) Plasma processing apparatus and plasma processing method
KR102194176B1 (ko) 플라스마 처리 장치 및 플라스마 처리 장치의 제어 방법
JP2015162266A (ja) プラズマ処理装置
TW202040627A (zh) 電漿處理設備
US20230411118A1 (en) Plasma treatment device
CN118073160B (zh) 射频功率的馈入结构及半导体工艺设备
CN110770880A (zh) 等离子处理装置
US20180047542A1 (en) Inductively coupled plasma chamber having a multi-zone showerhead
KR100855880B1 (ko) 기판 처리 장치 및 플라즈마 밀도의 제어 방법
CN223638326U (zh) 一种等离子体刻蚀设备
CN114171364B (zh) 半导体工艺设备
JP5847381B2 (ja) 体積の大きな構成部品にプラズマ支援によるコーティングおよび表面処理を施す装置および方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

D22 Grant of ip right intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D22-EXM-PE0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

F11 Ip right granted following substantive examination

Free format text: ST27 STATUS EVENT CODE: A-2-4-F10-F11-EXM-PR0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

U12 Designation fee paid

Free format text: ST27 STATUS EVENT CODE: A-2-2-U10-U12-OTH-PR1002 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

Q13 Ip right document published

Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE)