KR102901547B1 - 용융염 화학물질을 사용하는 무기 나노구조체의 합성 방법 - Google Patents

용융염 화학물질을 사용하는 무기 나노구조체의 합성 방법

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KR102901547B1
KR102901547B1 KR1020217027929A KR20217027929A KR102901547B1 KR 102901547 B1 KR102901547 B1 KR 102901547B1 KR 1020217027929 A KR1020217027929 A KR 1020217027929A KR 20217027929 A KR20217027929 A KR 20217027929A KR 102901547 B1 KR102901547 B1 KR 102901547B1
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nanostructure
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KR20210123351A (ko
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존 제이 컬리
알렉산더 투
웬저우 궈
춘밍 왕
크리스찬 이펜
찰스 호츠
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소에이 가가쿠 고교 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/0883—Arsenides; Nitrides; Phosphides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
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    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/70—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/36—Micro- or nanomaterials

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Luminescent Compositions (AREA)
  • Optical Filters (AREA)
KR1020217027929A 2019-02-05 2020-01-21 용융염 화학물질을 사용하는 무기 나노구조체의 합성 방법 Active KR102901547B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962801460P 2019-02-05 2019-02-05
US62/801,460 2019-02-05
PCT/US2020/014432 WO2020163075A1 (en) 2019-02-05 2020-01-21 Methods for synthesis of inorganic nanostructures using molten salt chemistry

Publications (2)

Publication Number Publication Date
KR20210123351A KR20210123351A (ko) 2021-10-13
KR102901547B1 true KR102901547B1 (ko) 2025-12-17

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Country Status (7)

Country Link
US (1) US11053439B2 (https=)
EP (1) EP3898887B1 (https=)
JP (1) JP7515789B2 (https=)
KR (1) KR102901547B1 (https=)
CN (1) CN113646403B (https=)
TW (1) TWI827791B (https=)
WO (1) WO2020163075A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102709934B1 (ko) * 2019-06-28 2024-09-26 삼성디스플레이 주식회사 비카드뮴 양자점 및 이를 포함한 복합체와 표시소자
KR102713258B1 (ko) 2019-06-28 2024-10-04 삼성디스플레이 주식회사 비카드뮴 양자점 및 이를 포함한 복합체와 표시소자
CN113956879A (zh) * 2020-12-15 2022-01-21 苏州星烁纳米科技有限公司 一种蓝光磷化铟量子点及其制备方法、电致发光器件和显示装置
KR102801692B1 (ko) * 2020-12-29 2025-04-30 삼성디스플레이 주식회사 양자점 및 이의 제조 방법, 양자점을 포함한 광학 부재 및 전자 장치
WO2024044525A1 (en) * 2022-08-22 2024-02-29 The University Of Chicago Methods for synthesizing iii-v nanocrystals
KR20240118234A (ko) * 2023-01-26 2024-08-05 삼성디스플레이 주식회사 발광 소자, 발광 소자 제조 방법, 및 발광 소자를 포함하는 표시 장치
WO2025188519A1 (en) * 2024-03-08 2025-09-12 The University Of Chicago Reduced molten inorganic salt solvents for cation-exchange of iii-v colloidal nanocrystals

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05259085A (ja) * 1992-03-10 1993-10-08 Nec Kansai Ltd ダブルヘテロ構造およびその製造方法
US6607829B1 (en) 1997-11-13 2003-08-19 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6501091B1 (en) 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
US6225198B1 (en) 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
JP2004537854A (ja) * 2001-07-31 2004-12-16 ザ ボード オブ トラスティース オブ ザ ユニバーシティ オブ イリノイ 結合した量子ドット及び量子井戸の半導体デバイス及びデバイス形成方法
US6949206B2 (en) 2002-09-05 2005-09-27 Nanosys, Inc. Organic species that facilitate charge transfer to or from nanostructures
AU2003268487A1 (en) 2002-09-05 2004-03-29 Nanosys, Inc. Nanocomposites
JP4789809B2 (ja) 2004-01-15 2011-10-12 サムスン エレクトロニクス カンパニー リミテッド ナノ結晶をドーピングしたマトリックス
US7645397B2 (en) 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
US8563133B2 (en) 2004-06-08 2013-10-22 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
CN102064102B (zh) 2004-06-08 2013-10-30 桑迪士克公司 形成单层纳米结构的方法和器件以及包含这种单层的器件
US7557028B1 (en) 2004-07-28 2009-07-07 Nanosys, Inc. Process for group III-V semiconductor nanostructure synthesis and compositions made using same
US20100155749A1 (en) 2007-03-19 2010-06-24 Nanosys, Inc. Light-emitting diode (led) devices comprising nanocrystals
WO2008115498A1 (en) 2007-03-19 2008-09-25 Nanosys, Inc. Methods for encapsulating nanocrystals
US20100110728A1 (en) 2007-03-19 2010-05-06 Nanosys, Inc. Light-emitting diode (led) devices comprising nanocrystals
WO2010126606A2 (en) 2009-05-01 2010-11-04 Nanosys, Inc. Functionalized matrixes for dispersion of nanostructures
EP2638321B1 (en) 2010-11-10 2019-05-08 Nanosys, Inc. Quantum dot films, lighting devices, and lighting methods
US20120205586A1 (en) * 2011-02-10 2012-08-16 Xiaofan Ren Indium phosphide colloidal nanocrystals
US9139770B2 (en) 2012-06-22 2015-09-22 Nanosys, Inc. Silicone ligands for stabilizing quantum dot films
TWI596188B (zh) 2012-07-02 2017-08-21 奈米系統股份有限公司 高度發光奈米結構及其製造方法
JP6250785B2 (ja) 2013-03-14 2017-12-20 ナノシス・インク． 無溶媒量子ドット交換方法
KR102067969B1 (ko) * 2015-11-30 2020-01-21 엘지디스플레이 주식회사 유기발광다이오드 표시장치
KR101739751B1 (ko) * 2015-12-30 2017-05-26 주식회사 상보 합금-쉘 양자점 제조 방법, 합금-쉘 양자점 및 이를 포함하는 백라이트 유닛
CN108699434A (zh) 2016-01-19 2018-10-23 纳米系统公司 具有GaP和AlP壳的INP量子点及其制造方法
CA3021763A1 (en) * 2016-04-26 2017-11-02 Nanosys, Inc. Stable inp quantum dots with thick shell coating and method of producing the same
US20180119007A1 (en) * 2016-04-26 2018-05-03 Nanosys, Inc. Stable inp quantum dots with thick shell coating and method of producing the same
US20170323991A1 (en) * 2016-05-04 2017-11-09 Los Alamos National Security, Llc Composition and method comprising overcoated quantum dots
EP3458545B1 (en) * 2016-05-19 2020-10-21 Nanosys, Inc. Method to improve the morphology of core/shell quantum dots for highly luminescent nanostructures
EP3464687A1 (en) * 2016-06-06 2019-04-10 Nanosys, Inc. Method for synthesizing core shell nanocrystals at high temperatures
EP3475388A1 (en) * 2016-06-27 2019-05-01 Nanosys, Inc. Methods for buffered coating of nanostructures
CN108384531B (zh) * 2018-03-12 2020-07-07 纳晶科技股份有限公司 Iii-v族核壳量子点的制备方法及含其的器件、组合物
US11247914B2 (en) 2018-06-26 2022-02-15 The University Of Chicago Colloidal ternary group III-V nanocrystals synthesized in molten salts

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Publication number Publication date
CN113646403B (zh) 2024-08-27
TW202035654A (zh) 2020-10-01
EP3898887A1 (en) 2021-10-27
EP3898887B1 (en) 2024-12-18
JP7515789B2 (ja) 2024-07-16
US20200325395A1 (en) 2020-10-15
TWI827791B (zh) 2024-01-01
CN113646403A (zh) 2021-11-12
JP2022523330A (ja) 2022-04-22
US11053439B2 (en) 2021-07-06
WO2020163075A1 (en) 2020-08-13
KR20210123351A (ko) 2021-10-13

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