CN113646403B - 使用熔盐化学合成无机纳米结构的方法 - Google Patents
使用熔盐化学合成无机纳米结构的方法 Download PDFInfo
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- CN113646403B CN113646403B CN202080027494.6A CN202080027494A CN113646403B CN 113646403 B CN113646403 B CN 113646403B CN 202080027494 A CN202080027494 A CN 202080027494A CN 113646403 B CN113646403 B CN 113646403B
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- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
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- C—CHEMISTRY; METALLURGY
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
- C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
- C09K11/70—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing phosphorus
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
- C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/36—Micro- or nanomaterials
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Luminescent Compositions (AREA)
- Optical Filters (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962801460P | 2019-02-05 | 2019-02-05 | |
| US62/801,460 | 2019-02-05 | ||
| PCT/US2020/014432 WO2020163075A1 (en) | 2019-02-05 | 2020-01-21 | Methods for synthesis of inorganic nanostructures using molten salt chemistry |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113646403A CN113646403A (zh) | 2021-11-12 |
| CN113646403B true CN113646403B (zh) | 2024-08-27 |
Family
ID=69726730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080027494.6A Active CN113646403B (zh) | 2019-02-05 | 2020-01-21 | 使用熔盐化学合成无机纳米结构的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11053439B2 (https=) |
| EP (1) | EP3898887B1 (https=) |
| JP (1) | JP7515789B2 (https=) |
| KR (1) | KR102901547B1 (https=) |
| CN (1) | CN113646403B (https=) |
| TW (1) | TWI827791B (https=) |
| WO (1) | WO2020163075A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102709934B1 (ko) * | 2019-06-28 | 2024-09-26 | 삼성디스플레이 주식회사 | 비카드뮴 양자점 및 이를 포함한 복합체와 표시소자 |
| KR102713258B1 (ko) | 2019-06-28 | 2024-10-04 | 삼성디스플레이 주식회사 | 비카드뮴 양자점 및 이를 포함한 복합체와 표시소자 |
| CN113956879A (zh) * | 2020-12-15 | 2022-01-21 | 苏州星烁纳米科技有限公司 | 一种蓝光磷化铟量子点及其制备方法、电致发光器件和显示装置 |
| KR102801692B1 (ko) * | 2020-12-29 | 2025-04-30 | 삼성디스플레이 주식회사 | 양자점 및 이의 제조 방법, 양자점을 포함한 광학 부재 및 전자 장치 |
| WO2024044525A1 (en) * | 2022-08-22 | 2024-02-29 | The University Of Chicago | Methods for synthesizing iii-v nanocrystals |
| KR20240118234A (ko) * | 2023-01-26 | 2024-08-05 | 삼성디스플레이 주식회사 | 발광 소자, 발광 소자 제조 방법, 및 발광 소자를 포함하는 표시 장치 |
| WO2025188519A1 (en) * | 2024-03-08 | 2025-09-12 | The University Of Chicago | Reduced molten inorganic salt solvents for cation-exchange of iii-v colloidal nanocrystals |
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| JPH05259085A (ja) * | 1992-03-10 | 1993-10-08 | Nec Kansai Ltd | ダブルヘテロ構造およびその製造方法 |
| US6607829B1 (en) | 1997-11-13 | 2003-08-19 | Massachusetts Institute Of Technology | Tellurium-containing nanocrystalline materials |
| US6322901B1 (en) | 1997-11-13 | 2001-11-27 | Massachusetts Institute Of Technology | Highly luminescent color-selective nano-crystalline materials |
| US6501091B1 (en) | 1998-04-01 | 2002-12-31 | Massachusetts Institute Of Technology | Quantum dot white and colored light emitting diodes |
| US6225198B1 (en) | 2000-02-04 | 2001-05-01 | The Regents Of The University Of California | Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process |
| JP2004537854A (ja) * | 2001-07-31 | 2004-12-16 | ザ ボード オブ トラスティース オブ ザ ユニバーシティ オブ イリノイ | 結合した量子ドット及び量子井戸の半導体デバイス及びデバイス形成方法 |
| US6949206B2 (en) | 2002-09-05 | 2005-09-27 | Nanosys, Inc. | Organic species that facilitate charge transfer to or from nanostructures |
| AU2003268487A1 (en) | 2002-09-05 | 2004-03-29 | Nanosys, Inc. | Nanocomposites |
| JP4789809B2 (ja) | 2004-01-15 | 2011-10-12 | サムスン エレクトロニクス カンパニー リミテッド | ナノ結晶をドーピングしたマトリックス |
| US7645397B2 (en) | 2004-01-15 | 2010-01-12 | Nanosys, Inc. | Nanocrystal doped matrixes |
| US8563133B2 (en) | 2004-06-08 | 2013-10-22 | Sandisk Corporation | Compositions and methods for modulation of nanostructure energy levels |
| CN102064102B (zh) | 2004-06-08 | 2013-10-30 | 桑迪士克公司 | 形成单层纳米结构的方法和器件以及包含这种单层的器件 |
| US7557028B1 (en) | 2004-07-28 | 2009-07-07 | Nanosys, Inc. | Process for group III-V semiconductor nanostructure synthesis and compositions made using same |
| US20100155749A1 (en) | 2007-03-19 | 2010-06-24 | Nanosys, Inc. | Light-emitting diode (led) devices comprising nanocrystals |
| WO2008115498A1 (en) | 2007-03-19 | 2008-09-25 | Nanosys, Inc. | Methods for encapsulating nanocrystals |
| US20100110728A1 (en) | 2007-03-19 | 2010-05-06 | Nanosys, Inc. | Light-emitting diode (led) devices comprising nanocrystals |
| WO2010126606A2 (en) | 2009-05-01 | 2010-11-04 | Nanosys, Inc. | Functionalized matrixes for dispersion of nanostructures |
| EP2638321B1 (en) | 2010-11-10 | 2019-05-08 | Nanosys, Inc. | Quantum dot films, lighting devices, and lighting methods |
| US20120205586A1 (en) * | 2011-02-10 | 2012-08-16 | Xiaofan Ren | Indium phosphide colloidal nanocrystals |
| US9139770B2 (en) | 2012-06-22 | 2015-09-22 | Nanosys, Inc. | Silicone ligands for stabilizing quantum dot films |
| TWI596188B (zh) | 2012-07-02 | 2017-08-21 | 奈米系統股份有限公司 | 高度發光奈米結構及其製造方法 |
| JP6250785B2 (ja) | 2013-03-14 | 2017-12-20 | ナノシス・インク. | 無溶媒量子ドット交換方法 |
| KR102067969B1 (ko) * | 2015-11-30 | 2020-01-21 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치 |
| KR101739751B1 (ko) * | 2015-12-30 | 2017-05-26 | 주식회사 상보 | 합금-쉘 양자점 제조 방법, 합금-쉘 양자점 및 이를 포함하는 백라이트 유닛 |
| CN108699434A (zh) | 2016-01-19 | 2018-10-23 | 纳米系统公司 | 具有GaP和AlP壳的INP量子点及其制造方法 |
| CA3021763A1 (en) * | 2016-04-26 | 2017-11-02 | Nanosys, Inc. | Stable inp quantum dots with thick shell coating and method of producing the same |
| US20180119007A1 (en) * | 2016-04-26 | 2018-05-03 | Nanosys, Inc. | Stable inp quantum dots with thick shell coating and method of producing the same |
| US20170323991A1 (en) * | 2016-05-04 | 2017-11-09 | Los Alamos National Security, Llc | Composition and method comprising overcoated quantum dots |
| EP3458545B1 (en) * | 2016-05-19 | 2020-10-21 | Nanosys, Inc. | Method to improve the morphology of core/shell quantum dots for highly luminescent nanostructures |
| EP3464687A1 (en) * | 2016-06-06 | 2019-04-10 | Nanosys, Inc. | Method for synthesizing core shell nanocrystals at high temperatures |
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| US11247914B2 (en) | 2018-06-26 | 2022-02-15 | The University Of Chicago | Colloidal ternary group III-V nanocrystals synthesized in molten salts |
-
2020
- 2020-01-21 TW TW109102282A patent/TWI827791B/zh active
- 2020-01-21 KR KR1020217027929A patent/KR102901547B1/ko active Active
- 2020-01-21 JP JP2021544693A patent/JP7515789B2/ja active Active
- 2020-01-21 CN CN202080027494.6A patent/CN113646403B/zh active Active
- 2020-01-21 EP EP20708277.7A patent/EP3898887B1/en active Active
- 2020-01-21 WO PCT/US2020/014432 patent/WO2020163075A1/en not_active Ceased
- 2020-02-05 US US16/782,250 patent/US11053439B2/en active Active
Non-Patent Citations (1)
| Title |
|---|
| Colloidal Chemistry in Molten Salts: Synthesis of luminescent In1-xGax P and In1-xGax As Quantum Dots;Vishwas Srivastava et al.;Journal of The American Chemical Society;20180820;第140卷(第38期);-29 * |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202035654A (zh) | 2020-10-01 |
| EP3898887A1 (en) | 2021-10-27 |
| EP3898887B1 (en) | 2024-12-18 |
| JP7515789B2 (ja) | 2024-07-16 |
| US20200325395A1 (en) | 2020-10-15 |
| KR102901547B1 (ko) | 2025-12-17 |
| TWI827791B (zh) | 2024-01-01 |
| CN113646403A (zh) | 2021-11-12 |
| JP2022523330A (ja) | 2022-04-22 |
| US11053439B2 (en) | 2021-07-06 |
| WO2020163075A1 (en) | 2020-08-13 |
| KR20210123351A (ko) | 2021-10-13 |
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Effective date of registration: 20231019 Address after: Tokyo, Japan Applicant after: SHOEI CHEMICAL Inc. Address before: California, USA Applicant before: NANOSYS, Inc. |
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