KR102898208B1 - 기판 처리 방법 및 기판 처리 장치 - Google Patents

기판 처리 방법 및 기판 처리 장치

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Publication number
KR102898208B1
KR102898208B1 KR1020210021336A KR20210021336A KR102898208B1 KR 102898208 B1 KR102898208 B1 KR 102898208B1 KR 1020210021336 A KR1020210021336 A KR 1020210021336A KR 20210021336 A KR20210021336 A KR 20210021336A KR 102898208 B1 KR102898208 B1 KR 102898208B1
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South Korea
Prior art keywords
gas
substrate
chamber
signal
upper electrode
Prior art date
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Application number
KR1020210021336A
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English (en)
Korean (ko)
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KR20210106371A (ko
Inventor
세이이치 와타나베
가즈키 나리시게
신허 제리 림
지엔펑 수
이 하오 응
전캉 막스 리앙
유준 니콜라스 루
치우 와 얍
빈 자오
차이 진 추아
다케히토 와타나베
고지 가와무라
겐지 고마츠
리 진
위 텍 탄
달리 리우
Original Assignee
도쿄엘렉트론가부시키가이샤
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01L21/31116—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01L21/02063—
    • H01L21/31144—
    • H01L21/67069—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/083—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being via holes penetrating underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020210021336A 2020-02-20 2021-02-17 기판 처리 방법 및 기판 처리 장치 Active KR102898208B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2020-026863 2020-02-20
JP2020026863A JP7382848B2 (ja) 2020-02-20 2020-02-20 基板処理方法および基板処理装置

Publications (2)

Publication Number Publication Date
KR20210106371A KR20210106371A (ko) 2021-08-30
KR102898208B1 true KR102898208B1 (ko) 2025-12-09

Family

ID=77275787

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210021336A Active KR102898208B1 (ko) 2020-02-20 2021-02-17 기판 처리 방법 및 기판 처리 장치

Country Status (5)

Country Link
US (1) US11501976B2 (https=)
JP (1) JP7382848B2 (https=)
KR (1) KR102898208B1 (https=)
CN (1) CN113284786B (https=)
TW (1) TWI874577B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114695051B (zh) * 2020-12-31 2025-02-21 拓荆科技股份有限公司 半导体处理设备及方法
US12590361B2 (en) * 2022-06-28 2026-03-31 Applied Materials Inc. Methods and apparatus for processing a substrate
US20250293026A1 (en) * 2024-03-15 2025-09-18 Applied Materials, Inc. High-power carbon hardmask deposition and charge dissipation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080280436A1 (en) * 2007-05-10 2008-11-13 Jeng-Ho Wang Method for fabricating an inductor structure or a dual damascene structure
KR101841585B1 (ko) 2010-08-23 2018-03-23 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법 및 플라즈마 처리 장치

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
US5737177A (en) * 1996-10-17 1998-04-07 Applied Materials, Inc. Apparatus and method for actively controlling the DC potential of a cathode pedestal
JP2004111381A (ja) * 2002-08-26 2004-04-08 Matsushita Electric Ind Co Ltd プラズマ処理装置及び方法
US7988816B2 (en) * 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
JP5638682B2 (ja) * 2006-03-22 2014-12-10 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
US9123509B2 (en) * 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
US20090004836A1 (en) * 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
JP5171683B2 (ja) 2009-02-18 2013-03-27 東京エレクトロン株式会社 プラズマ処理方法
US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US20130059448A1 (en) * 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
US9269587B2 (en) * 2013-09-06 2016-02-23 Applied Materials, Inc. Methods for etching materials using synchronized RF pulses
JP6320248B2 (ja) * 2014-03-04 2018-05-09 東京エレクトロン株式会社 プラズマエッチング方法
JP6327970B2 (ja) * 2014-06-19 2018-05-23 東京エレクトロン株式会社 絶縁膜をエッチングする方法
JP6512962B2 (ja) * 2014-09-17 2019-05-15 東京エレクトロン株式会社 プラズマ処理装置
US9966231B2 (en) * 2016-02-29 2018-05-08 Lam Research Corporation Direct current pulsing plasma systems
JP7137913B2 (ja) 2017-06-23 2022-09-15 株式会社半導体エネルギー研究所 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080280436A1 (en) * 2007-05-10 2008-11-13 Jeng-Ho Wang Method for fabricating an inductor structure or a dual damascene structure
KR101841585B1 (ko) 2010-08-23 2018-03-23 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법 및 플라즈마 처리 장치

Also Published As

Publication number Publication date
CN113284786A (zh) 2021-08-20
KR20210106371A (ko) 2021-08-30
JP2021132126A (ja) 2021-09-09
TWI874577B (zh) 2025-03-01
CN113284786B (zh) 2025-08-01
JP7382848B2 (ja) 2023-11-17
TW202139787A (zh) 2021-10-16
US20210265170A1 (en) 2021-08-26
US11501976B2 (en) 2022-11-15

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