KR102891166B1 - 바람직한 결정학적 배향을 갖는 사파이어 단결정과 함께 단결정질 사파이어 시드를 제조하는 방법, 및 시계제조 및 쥬얼리를 위한 외부 부품 및 기능 컴포넌트들 - Google Patents

바람직한 결정학적 배향을 갖는 사파이어 단결정과 함께 단결정질 사파이어 시드를 제조하는 방법, 및 시계제조 및 쥬얼리를 위한 외부 부품 및 기능 컴포넌트들

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Publication number
KR102891166B1
KR102891166B1 KR1020220140650A KR20220140650A KR102891166B1 KR 102891166 B1 KR102891166 B1 KR 102891166B1 KR 1020220140650 A KR1020220140650 A KR 1020220140650A KR 20220140650 A KR20220140650 A KR 20220140650A KR 102891166 B1 KR102891166 B1 KR 102891166B1
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South Korea
Prior art keywords
sapphire
single crystal
delete delete
crystallographic
seed
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Korean (ko)
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KR20230063864A (ko
Inventor
디디에 코셰-뮈슈
나세르 베리샤
피에리 뷔유
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코마도 쏘시에떼 아노님
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • A—HUMAN NECESSITIES
    • A44—HABERDASHERY; JEWELLERY
    • A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C27/00—Making jewellery or other personal adornments
    • A44C27/001—Materials for manufacturing jewellery
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00—Compounds of aluminium
    • C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B39/00—Watch crystals; Fastening or sealing of crystals; Clock glasses
    • G04B39/004—Watch crystals; Fastening or sealing of crystals; Clock glasses from a material other than glass
    • G04B39/006—Watch crystals; Fastening or sealing of crystals; Clock glasses from a material other than glass out of wear resistant material, e.g. sapphire
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020220140650A 2021-11-02 2022-10-27 바람직한 결정학적 배향을 갖는 사파이어 단결정과 함께 단결정질 사파이어 시드를 제조하는 방법, 및 시계제조 및 쥬얼리를 위한 외부 부품 및 기능 컴포넌트들 Active KR102891166B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP21205897.8 2021-11-02
EP21205897.8A EP4174221A1 (fr) 2021-11-02 2021-11-02 Procédé de fabrication d'un germe de saphir monocristallin ainsi que d'un monocristal de saphir à orientation cristallographique préférentielle et composants d habillage et fonctionnels pour l horlogerie et la bijouterie

Publications (2)

Publication Number Publication Date
KR20230063864A KR20230063864A (ko) 2023-05-09
KR102891166B1 true KR102891166B1 (ko) 2025-11-25

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Family Applications (1)

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KR1020220140650A Active KR102891166B1 (ko) 2021-11-02 2022-10-27 바람직한 결정학적 배향을 갖는 사파이어 단결정과 함께 단결정질 사파이어 시드를 제조하는 방법, 및 시계제조 및 쥬얼리를 위한 외부 부품 및 기능 컴포넌트들

Country Status (5)

Country Link
US (1) US20230133632A1 (https=)
EP (1) EP4174221A1 (https=)
JP (2) JP2023068625A (https=)
KR (1) KR102891166B1 (https=)
CN (1) CN116065237A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4553196A1 (fr) * 2023-11-09 2025-05-14 Comadur S.A. Procédé de fabrication de saphir en barre

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008000971A (ja) * 2006-06-22 2008-01-10 Sumitomo Metal Mining Co Ltd サファイア単結晶ブロックの製造方法及び装置
JP2017095288A (ja) * 2015-11-19 2017-06-01 並木精密宝石株式会社 サファイア単結晶リボンとその製造方法

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
DE2555610C3 (de) * 1974-12-20 1979-11-22 Union Carbide Corp., New York, N.Y. (V.St.A.) Verfahren zur Herstellung von A -Aluminiumoxid-Einkristallen
JPS5450016A (en) * 1977-09-27 1979-04-19 Toshiba Ceramics Co Cover glass for time keeper
CH636240GA3 (en) * 1981-05-20 1983-05-31 Two-part watch case
US8227082B2 (en) * 2007-09-26 2012-07-24 Ut-Battelle, Llc Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom
CN102713027A (zh) * 2009-10-22 2012-10-03 先进再生能源有限责任公司 晶体生长方法和系统
US9777398B2 (en) * 2012-09-25 2017-10-03 Apple Inc. Plane orientation of crystalline structures
JP2014162673A (ja) * 2013-02-25 2014-09-08 Tokuyama Corp サファイア単結晶コアおよびその製造方法
WO2014135211A1 (en) * 2013-03-07 2014-09-12 Vertu Corporation Limited Sapphire structure having a plurality of crystal planes
CN103215646A (zh) * 2013-04-02 2013-07-24 苏州海铂晶体有限公司 一种c取向蓝宝石单晶的新型生产方法
JP2016199447A (ja) * 2015-04-14 2016-12-01 住友金属鉱山株式会社 酸化アルミニウム単結晶の製造方法
KR102347578B1 (ko) * 2019-12-11 2022-01-05 한국세라믹기술원 광흡수 기능성 판상 단결정 알루미나 분말의 제조방법
JP7771603B2 (ja) * 2021-09-29 2025-11-18 株式会社プロテリアル 湿式成形用金型、焼結磁石の製造方法、焼結磁石、ロータ、及びロータの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008000971A (ja) * 2006-06-22 2008-01-10 Sumitomo Metal Mining Co Ltd サファイア単結晶ブロックの製造方法及び装置
JP2017095288A (ja) * 2015-11-19 2017-06-01 並木精密宝石株式会社 サファイア単結晶リボンとその製造方法

Also Published As

Publication number Publication date
CN116065237A (zh) 2023-05-05
US20230133632A1 (en) 2023-05-04
EP4174221A1 (fr) 2023-05-03
JP2024147802A (ja) 2024-10-16
KR20230063864A (ko) 2023-05-09
JP2023068625A (ja) 2023-05-17

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