JP2023068625A - 単結晶サファイアの種結晶、所望の結晶配向を有するサファイア単結晶を製造する方法、及び携行型時計及び宝飾品のための外側部品又は機能部品 - Google Patents

単結晶サファイアの種結晶、所望の結晶配向を有するサファイア単結晶を製造する方法、及び携行型時計及び宝飾品のための外側部品又は機能部品 Download PDF

Info

Publication number
JP2023068625A
JP2023068625A JP2022162145A JP2022162145A JP2023068625A JP 2023068625 A JP2023068625 A JP 2023068625A JP 2022162145 A JP2022162145 A JP 2022162145A JP 2022162145 A JP2022162145 A JP 2022162145A JP 2023068625 A JP2023068625 A JP 2023068625A
Authority
JP
Japan
Prior art keywords
sapphire
crystal
single crystal
axes
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022162145A
Other languages
English (en)
Japanese (ja)
Inventor
ディディエ・コシェ－ミュシー
Cochet-Muchy Didier
ナセル・ベリシャ
Berisha Naser
ピエリ・ヴュイユ
Pierry Vuille
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Comadur SA
Original Assignee
Comadur SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Comadur SA filed Critical Comadur SA
Publication of JP2023068625A publication Critical patent/JP2023068625A/ja
Priority to JP2024121035A priority Critical patent/JP2024147802A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • A—HUMAN NECESSITIES
    • A44—HABERDASHERY; JEWELLERY
    • A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C27/00—Making jewellery or other personal adornments
    • A44C27/001—Materials for manufacturing jewellery
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00—Compounds of aluminium
    • C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B39/00—Watch crystals; Fastening or sealing of crystals; Clock glasses
    • G04B39/004—Watch crystals; Fastening or sealing of crystals; Clock glasses from a material other than glass
    • G04B39/006—Watch crystals; Fastening or sealing of crystals; Clock glasses from a material other than glass out of wear resistant material, e.g. sapphire
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2022162145A 2021-11-02 2022-10-07 単結晶サファイアの種結晶、所望の結晶配向を有するサファイア単結晶を製造する方法、及び携行型時計及び宝飾品のための外側部品又は機能部品 Pending JP2023068625A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024121035A JP2024147802A (ja) 2021-11-02 2024-07-26 単結晶サファイアの種結晶、所望の結晶配向を有するサファイア単結晶を製造する方法、及び携行型時計及び宝飾品のための外側部品又は機能部品

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP21205897.8 2021-11-02
EP21205897.8A EP4174221A1 (fr) 2021-11-02 2021-11-02 Procédé de fabrication d'un germe de saphir monocristallin ainsi que d'un monocristal de saphir à orientation cristallographique préférentielle et composants d habillage et fonctionnels pour l horlogerie et la bijouterie

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024121035A Division JP2024147802A (ja) 2021-11-02 2024-07-26 単結晶サファイアの種結晶、所望の結晶配向を有するサファイア単結晶を製造する方法、及び携行型時計及び宝飾品のための外側部品又は機能部品

Publications (1)

Publication Number Publication Date
JP2023068625A true JP2023068625A (ja) 2023-05-17

Family

ID=78500456

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022162145A Pending JP2023068625A (ja) 2021-11-02 2022-10-07 単結晶サファイアの種結晶、所望の結晶配向を有するサファイア単結晶を製造する方法、及び携行型時計及び宝飾品のための外側部品又は機能部品
JP2024121035A Pending JP2024147802A (ja) 2021-11-02 2024-07-26 単結晶サファイアの種結晶、所望の結晶配向を有するサファイア単結晶を製造する方法、及び携行型時計及び宝飾品のための外側部品又は機能部品

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024121035A Pending JP2024147802A (ja) 2021-11-02 2024-07-26 単結晶サファイアの種結晶、所望の結晶配向を有するサファイア単結晶を製造する方法、及び携行型時計及び宝飾品のための外側部品又は機能部品

Country Status (5)

Country Link
US (1) US20230133632A1 (https=)
EP (1) EP4174221A1 (https=)
JP (2) JP2023068625A (https=)
KR (1) KR102891166B1 (https=)
CN (1) CN116065237A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4553196A1 (fr) * 2023-11-09 2025-05-14 Comadur S.A. Procédé de fabrication de saphir en barre

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5187197A (https=) * 1974-12-20 1976-07-30 Union Carbide Corp
JPS5450016A (en) * 1977-09-27 1979-04-19 Toshiba Ceramics Co Cover glass for time keeper
JP2014162673A (ja) * 2013-02-25 2014-09-08 Tokuyama Corp サファイア単結晶コアおよびその製造方法
JP2016199447A (ja) * 2015-04-14 2016-12-01 住友金属鉱山株式会社 酸化アルミニウム単結晶の製造方法
JP2017095288A (ja) * 2015-11-19 2017-06-01 並木精密宝石株式会社 サファイア単結晶リボンとその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH636240GA3 (en) * 1981-05-20 1983-05-31 Two-part watch case
JP2008000971A (ja) * 2006-06-22 2008-01-10 Sumitomo Metal Mining Co Ltd サファイア単結晶ブロックの製造方法及び装置
US8227082B2 (en) * 2007-09-26 2012-07-24 Ut-Battelle, Llc Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom
CN102713027A (zh) * 2009-10-22 2012-10-03 先进再生能源有限责任公司 晶体生长方法和系统
US9777398B2 (en) * 2012-09-25 2017-10-03 Apple Inc. Plane orientation of crystalline structures
WO2014135211A1 (en) * 2013-03-07 2014-09-12 Vertu Corporation Limited Sapphire structure having a plurality of crystal planes
CN103215646A (zh) * 2013-04-02 2013-07-24 苏州海铂晶体有限公司 一种c取向蓝宝石单晶的新型生产方法
KR102347578B1 (ko) * 2019-12-11 2022-01-05 한국세라믹기술원 광흡수 기능성 판상 단결정 알루미나 분말의 제조방법
JP7771603B2 (ja) * 2021-09-29 2025-11-18 株式会社プロテリアル 湿式成形用金型、焼結磁石の製造方法、焼結磁石、ロータ、及びロータの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5187197A (https=) * 1974-12-20 1976-07-30 Union Carbide Corp
JPS5450016A (en) * 1977-09-27 1979-04-19 Toshiba Ceramics Co Cover glass for time keeper
JP2014162673A (ja) * 2013-02-25 2014-09-08 Tokuyama Corp サファイア単結晶コアおよびその製造方法
JP2016199447A (ja) * 2015-04-14 2016-12-01 住友金属鉱山株式会社 酸化アルミニウム単結晶の製造方法
JP2017095288A (ja) * 2015-11-19 2017-06-01 並木精密宝石株式会社 サファイア単結晶リボンとその製造方法

Also Published As

Publication number Publication date
CN116065237A (zh) 2023-05-05
US20230133632A1 (en) 2023-05-04
EP4174221A1 (fr) 2023-05-03
JP2024147802A (ja) 2024-10-16
KR102891166B1 (ko) 2025-11-25
KR20230063864A (ko) 2023-05-09

Similar Documents

Publication Publication Date Title
CN105229208B (zh) β-Ga2O3系单晶的培育方法以及β-Ga2O3系单晶基板及其制造方法
CN103374754A (zh) 蓝宝石材料及其制造方法
JP2024147802A (ja) 単結晶サファイアの種結晶、所望の結晶配向を有するサファイア単結晶を製造する方法、及び携行型時計及び宝飾品のための外側部品又は機能部品
US2634554A (en) Synthetic gem production
Harris A peek into the history of sapphire crystal growth
US9777398B2 (en) Plane orientation of crystalline structures
KR100731831B1 (ko) 실리콘단결정 인상용 석영유리 도가니 및 그 제조방법
CN115504480B (zh) 化合物硼酸锌钡和硼酸锌钡双折射晶体及其制备方法和用途
RU2802604C1 (ru) Способ изготовления монокристаллической сапфировой затравки, а также монокристалла сапфира с предпочтительной кристаллографической ориентацией и внешних деталей и функциональных компонентов для часового и ювелирного дела
CN103205799A (zh) 一种生长c向白宝石单晶体的方法
Tatartchenko 10 Sapphire Crystal Growth and Applications
CN101319385B (zh) 一种适于制作ppktp器件的ktp晶体生长方法
HK40085681A (en) Method for manufacturing a monocrystalline sapphire seed as well as a sapphire single-crystal with a preferred crystallographic orientation and external part and functional components for watchmaking and jewellery
US5370076A (en) Method of producing single crystal of KTiOPO4
CN100465357C (zh) 氟化物晶体的制造装置
Feigelson et al. Growth of nonlinear crystals for frequency conversion
CH718487B1 (fr) Procédé de fabrication d'un germe de saphir monocristallin ainsi que d'un monocristal de saphir à orientation cristallographique préférentielle et composants d'habillage et fonctionnels pour l'horlogerie et la bijouterie.
Jayaraman A brief overview of gem materials: Natural and synthetic
JP7798972B2 (ja) サファイア棒状体の製造方法
JP2000247793A (ja) ランガサイト型結晶の作製方法
KR200285675Y1 (ko) 태양전지용 3상 실리콘 인곳트
KR100509346B1 (ko) 녹색 큐빅 지르코니아 단결정의 제조방법
Dess Melt growth of refractory oxide single crystals
JP2673255B2 (ja) 時計ケースおよびその製造方法
RU2561511C1 (ru) Способ изготовления монокристаллических цилиндрических шайб из тугоплавких соединений

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20221007

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20231013

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20231031

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231225

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20240326

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240726

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20240802

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20241122