CN116065237A - 用于制造单晶蓝宝石晶种和蓝宝石单晶的方法以及用于钟表和珠宝的外部构件和功能构件 - Google Patents

用于制造单晶蓝宝石晶种和蓝宝石单晶的方法以及用于钟表和珠宝的外部构件和功能构件 Download PDF

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Publication number
CN116065237A
CN116065237A CN202211357222.XA CN202211357222A CN116065237A CN 116065237 A CN116065237 A CN 116065237A CN 202211357222 A CN202211357222 A CN 202211357222A CN 116065237 A CN116065237 A CN 116065237A
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CN
China
Prior art keywords
sapphire
crystal
single crystal
plate
angle
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Pending
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CN202211357222.XA
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English (en)
Chinese (zh)
Inventor
D·科切特-穆奇
N·贝里沙
P·维利
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Comadur SA
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Comadur SA
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Publication of CN116065237A publication Critical patent/CN116065237A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • A—HUMAN NECESSITIES
    • A44—HABERDASHERY; JEWELLERY
    • A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C27/00—Making jewellery or other personal adornments
    • A44C27/001—Materials for manufacturing jewellery
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00—Compounds of aluminium
    • C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B39/00—Watch crystals; Fastening or sealing of crystals; Clock glasses
    • G04B39/004—Watch crystals; Fastening or sealing of crystals; Clock glasses from a material other than glass
    • G04B39/006—Watch crystals; Fastening or sealing of crystals; Clock glasses from a material other than glass out of wear resistant material, e.g. sapphire
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202211357222.XA 2021-11-02 2022-11-01 用于制造单晶蓝宝石晶种和蓝宝石单晶的方法以及用于钟表和珠宝的外部构件和功能构件 Pending CN116065237A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP21205897.8 2021-11-02
EP21205897.8A EP4174221A1 (fr) 2021-11-02 2021-11-02 Procédé de fabrication d'un germe de saphir monocristallin ainsi que d'un monocristal de saphir à orientation cristallographique préférentielle et composants d habillage et fonctionnels pour l horlogerie et la bijouterie

Publications (1)

Publication Number Publication Date
CN116065237A true CN116065237A (zh) 2023-05-05

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CN202211357222.XA Pending CN116065237A (zh) 2021-11-02 2022-11-01 用于制造单晶蓝宝石晶种和蓝宝石单晶的方法以及用于钟表和珠宝的外部构件和功能构件

Country Status (5)

Country Link
US (1) US20230133632A1 (https=)
EP (1) EP4174221A1 (https=)
JP (2) JP2023068625A (https=)
KR (1) KR102891166B1 (https=)
CN (1) CN116065237A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4553196A1 (fr) * 2023-11-09 2025-05-14 Comadur S.A. Procédé de fabrication de saphir en barre

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090081456A1 (en) * 2007-09-26 2009-03-26 Amit Goyal Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom
CN103215646A (zh) * 2013-04-02 2013-07-24 苏州海铂晶体有限公司 一种c取向蓝宝石单晶的新型生产方法
US20140083353A1 (en) * 2012-09-25 2014-03-27 Apple Inc. Plane orientation of crystalline structures
JP2017095288A (ja) * 2015-11-19 2017-06-01 並木精密宝石株式会社 サファイア単結晶リボンとその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2555610C3 (de) * 1974-12-20 1979-11-22 Union Carbide Corp., New York, N.Y. (V.St.A.) Verfahren zur Herstellung von A -Aluminiumoxid-Einkristallen
JPS5450016A (en) * 1977-09-27 1979-04-19 Toshiba Ceramics Co Cover glass for time keeper
CH636240GA3 (en) * 1981-05-20 1983-05-31 Two-part watch case
JP2008000971A (ja) * 2006-06-22 2008-01-10 Sumitomo Metal Mining Co Ltd サファイア単結晶ブロックの製造方法及び装置
CN102713027A (zh) * 2009-10-22 2012-10-03 先进再生能源有限责任公司 晶体生长方法和系统
JP2014162673A (ja) * 2013-02-25 2014-09-08 Tokuyama Corp サファイア単結晶コアおよびその製造方法
WO2014135211A1 (en) * 2013-03-07 2014-09-12 Vertu Corporation Limited Sapphire structure having a plurality of crystal planes
JP2016199447A (ja) * 2015-04-14 2016-12-01 住友金属鉱山株式会社 酸化アルミニウム単結晶の製造方法
KR102347578B1 (ko) * 2019-12-11 2022-01-05 한국세라믹기술원 광흡수 기능성 판상 단결정 알루미나 분말의 제조방법
JP7771603B2 (ja) * 2021-09-29 2025-11-18 株式会社プロテリアル 湿式成形用金型、焼結磁石の製造方法、焼結磁石、ロータ、及びロータの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090081456A1 (en) * 2007-09-26 2009-03-26 Amit Goyal Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom
US20140083353A1 (en) * 2012-09-25 2014-03-27 Apple Inc. Plane orientation of crystalline structures
CN103215646A (zh) * 2013-04-02 2013-07-24 苏州海铂晶体有限公司 一种c取向蓝宝石单晶的新型生产方法
JP2017095288A (ja) * 2015-11-19 2017-06-01 並木精密宝石株式会社 サファイア単結晶リボンとその製造方法

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US20230133632A1 (en) 2023-05-04
EP4174221A1 (fr) 2023-05-03
JP2024147802A (ja) 2024-10-16
KR102891166B1 (ko) 2025-11-25
KR20230063864A (ko) 2023-05-09
JP2023068625A (ja) 2023-05-17

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