KR102882943B1 - 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 - Google Patents

반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법

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Publication number
KR102882943B1
KR102882943B1 KR1020247023066A KR20247023066A KR102882943B1 KR 102882943 B1 KR102882943 B1 KR 102882943B1 KR 1020247023066 A KR1020247023066 A KR 1020247023066A KR 20247023066 A KR20247023066 A KR 20247023066A KR 102882943 B1 KR102882943 B1 KR 102882943B1
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KR
South Korea
Prior art keywords
film
reflective mask
mask blank
protective film
multilayer reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020247023066A
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English (en)
Korean (ko)
Other versions
KR20240115334A (ko
Inventor
다쿠마 가토
다이지로 아카기
다케시 오카토
류스케 오이시
유스케 오노
Original Assignee
에이지씨 가부시키가이샤
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Publication date
Application filed by 에이지씨 가부시키가이샤 filed Critical 에이지씨 가부시키가이샤
Priority to KR1020257034808A priority Critical patent/KR20250153884A/ko
Publication of KR20240115334A publication Critical patent/KR20240115334A/ko
Application granted granted Critical
Publication of KR102882943B1 publication Critical patent/KR102882943B1/ko
Active legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
KR1020247023066A 2022-04-01 2023-03-27 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 Active KR102882943B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257034808A KR20250153884A (ko) 2022-04-01 2023-03-27 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2022-061684 2022-04-01
JP2022061684 2022-04-01
PCT/JP2023/012236 WO2023190360A1 (ja) 2022-04-01 2023-03-27 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
KR1020237035081A KR102685023B1 (ko) 2022-04-01 2023-03-27 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020237035081A Division KR102685023B1 (ko) 2022-04-01 2023-03-27 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257034808A Division KR20250153884A (ko) 2022-04-01 2023-03-27 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법

Publications (2)

Publication Number Publication Date
KR20240115334A KR20240115334A (ko) 2024-07-25
KR102882943B1 true KR102882943B1 (ko) 2025-11-07

Family

ID=88202236

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020247023066A Active KR102882943B1 (ko) 2022-04-01 2023-03-27 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
KR1020237035081A Active KR102685023B1 (ko) 2022-04-01 2023-03-27 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
KR1020257034808A Pending KR20250153884A (ko) 2022-04-01 2023-03-27 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020237035081A Active KR102685023B1 (ko) 2022-04-01 2023-03-27 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
KR1020257034808A Pending KR20250153884A (ko) 2022-04-01 2023-03-27 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법

Country Status (5)

Country Link
US (3) US12001133B2 (https=)
JP (3) JP7367902B1 (https=)
KR (3) KR102882943B1 (https=)
TW (3) TW202544547A (https=)
WO (1) WO2023190360A1 (https=)

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JP7731951B2 (ja) * 2023-10-05 2025-09-01 レーザーテック株式会社 画像処理装置、検査装置、画像処理方法及び検査方法
JPWO2025079375A1 (https=) * 2023-10-10 2025-04-17
WO2025115587A1 (ja) * 2023-11-29 2025-06-05 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
TW202548405A (zh) * 2024-06-03 2025-12-16 日商Ａｇｃ股份有限公司 反射型光罩基底、反射型光罩及反射型光罩之製造方法

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JP2008293032A (ja) 2001-07-03 2008-12-04 Euv Llc 不動態化保護膜二重層
JP2012129520A (ja) * 2010-12-14 2012-07-05 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクスの製造方法、および該マスクブランクス用の機能膜付基板の製造方法
JP2021128247A (ja) * 2020-02-13 2021-09-02 Hoya株式会社 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法
JP2021184108A (ja) 2020-03-27 2021-12-02 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法

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US20060237303A1 (en) 2005-03-31 2006-10-26 Hoya Corporation Sputtering target, method of manufacturing a multilayer reflective film coated substrate, method of manufacturing a reflective mask blank, and method of manufacturing a reflective mask
DE102012222466A1 (de) * 2012-12-06 2014-06-12 Carl Zeiss Smt Gmbh Reflektives optisches Element für die EUV-Lithographie
JP6377361B2 (ja) 2013-02-11 2018-08-22 Hoya株式会社 多層反射膜付き基板及びその製造方法、反射型マスクブランクの製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
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JP2004517484A (ja) 2001-01-03 2004-06-10 イーユーヴィー リミテッド リアビリティ コーポレーション 極紫外線リソグラフィー用の自己浄化光学装置
JP2008293032A (ja) 2001-07-03 2008-12-04 Euv Llc 不動態化保護膜二重層
JP2012129520A (ja) * 2010-12-14 2012-07-05 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクスの製造方法、および該マスクブランクス用の機能膜付基板の製造方法
JP2021128247A (ja) * 2020-02-13 2021-09-02 Hoya株式会社 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法
JP2021184108A (ja) 2020-03-27 2021-12-02 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法

Also Published As

Publication number Publication date
US12306530B2 (en) 2025-05-20
JP2024133671A (ja) 2024-10-02
US12001133B2 (en) 2024-06-04
TW202544547A (zh) 2025-11-16
WO2023190360A1 (ja) 2023-10-05
US20250251658A1 (en) 2025-08-07
TWI856588B (zh) 2024-09-21
KR20230156410A (ko) 2023-11-14
US20240280890A1 (en) 2024-08-22
JPWO2023190360A1 (https=) 2023-10-05
JP2023171930A (ja) 2023-12-05
JP7367902B1 (ja) 2023-10-24
TWI896295B (zh) 2025-09-01
US20240045320A1 (en) 2024-02-08
KR20250153884A (ko) 2025-10-27
KR20240115334A (ko) 2024-07-25
JP7529119B2 (ja) 2024-08-06
TW202447329A (zh) 2024-12-01
TW202403432A (zh) 2024-01-16
KR102685023B1 (ko) 2024-07-16

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