JPWO2023190360A1 - - Google Patents
Info
- Publication number
- JPWO2023190360A1 JPWO2023190360A1 JP2023548742A JP2023548742A JPWO2023190360A1 JP WO2023190360 A1 JPWO2023190360 A1 JP WO2023190360A1 JP 2023548742 A JP2023548742 A JP 2023548742A JP 2023548742 A JP2023548742 A JP 2023548742A JP WO2023190360 A1 JPWO2023190360 A1 JP WO2023190360A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/52—Reflectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023172712A JP7529119B2 (ja) | 2022-04-01 | 2023-10-04 | 反射型マスクブランク、反射型マスク、および反射型マスクブランクの製造方法 |
| JP2024110123A JP2024133671A (ja) | 2022-04-01 | 2024-07-09 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022061684 | 2022-04-01 | ||
| JP2022061684 | 2022-04-01 | ||
| PCT/JP2023/012236 WO2023190360A1 (ja) | 2022-04-01 | 2023-03-27 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023172712A Division JP7529119B2 (ja) | 2022-04-01 | 2023-10-04 | 反射型マスクブランク、反射型マスク、および反射型マスクブランクの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023190360A1 true JPWO2023190360A1 (https=) | 2023-10-05 |
| JP7367902B1 JP7367902B1 (ja) | 2023-10-24 |
| JPWO2023190360A5 JPWO2023190360A5 (https=) | 2024-03-08 |
Family
ID=88202236
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023548742A Active JP7367902B1 (ja) | 2022-04-01 | 2023-03-27 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法 |
| JP2023172712A Active JP7529119B2 (ja) | 2022-04-01 | 2023-10-04 | 反射型マスクブランク、反射型マスク、および反射型マスクブランクの製造方法 |
| JP2024110123A Pending JP2024133671A (ja) | 2022-04-01 | 2024-07-09 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023172712A Active JP7529119B2 (ja) | 2022-04-01 | 2023-10-04 | 反射型マスクブランク、反射型マスク、および反射型マスクブランクの製造方法 |
| JP2024110123A Pending JP2024133671A (ja) | 2022-04-01 | 2024-07-09 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US12001133B2 (https=) |
| JP (3) | JP7367902B1 (https=) |
| KR (3) | KR102882943B1 (https=) |
| TW (3) | TW202544547A (https=) |
| WO (1) | WO2023190360A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7731951B2 (ja) * | 2023-10-05 | 2025-09-01 | レーザーテック株式会社 | 画像処理装置、検査装置、画像処理方法及び検査方法 |
| JPWO2025079375A1 (https=) * | 2023-10-10 | 2025-04-17 | ||
| WO2025115587A1 (ja) * | 2023-11-29 | 2025-06-05 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
| TW202548405A (zh) * | 2024-06-03 | 2025-12-16 | 日商Ａｇｃ股份有限公司 | 反射型光罩基底、反射型光罩及反射型光罩之製造方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6664554B2 (en) | 2001-01-03 | 2003-12-16 | Euv Llc | Self-cleaning optic for extreme ultraviolet lithography |
| US20030008148A1 (en) | 2001-07-03 | 2003-01-09 | Sasa Bajt | Optimized capping layers for EUV multilayers |
| JP2006283053A (ja) * | 2005-03-31 | 2006-10-19 | Hoya Corp | スパッタリングターゲット、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法 |
| US20060237303A1 (en) | 2005-03-31 | 2006-10-26 | Hoya Corporation | Sputtering target, method of manufacturing a multilayer reflective film coated substrate, method of manufacturing a reflective mask blank, and method of manufacturing a reflective mask |
| US8562794B2 (en) | 2010-12-14 | 2013-10-22 | Asahi Glass Company, Limited | Process for producing reflective mask blank for EUV lithography and process for producing substrate with functional film for the mask blank |
| DE102012222466A1 (de) * | 2012-12-06 | 2014-06-12 | Carl Zeiss Smt Gmbh | Reflektives optisches Element für die EUV-Lithographie |
| JP6377361B2 (ja) | 2013-02-11 | 2018-08-22 | Hoya株式会社 | 多層反射膜付き基板及びその製造方法、反射型マスクブランクの製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法 |
| JP2015073013A (ja) * | 2013-10-03 | 2015-04-16 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランクの製造方法 |
| JP6861095B2 (ja) * | 2017-03-03 | 2021-04-21 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
| JP6845122B2 (ja) * | 2017-11-27 | 2021-03-17 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
| KR102402767B1 (ko) * | 2017-12-21 | 2022-05-26 | 삼성전자주식회사 | 극자외선 마스크 블랭크, 극자외선 마스크 블랭크를 이용하여 제조된 포토마스크, 포토마스크를 이용한 리소그래피 장치 및 포토마스크를 이용한 반도체 장치 제조 방법 |
| WO2020184473A1 (ja) * | 2019-03-13 | 2020-09-17 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
| US20210096456A1 (en) | 2019-09-30 | 2021-04-01 | Hoya Corporation | Multilayered-reflective-film-provided substrate, reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device |
| JP7587378B2 (ja) * | 2019-09-30 | 2024-11-20 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
| JP7475154B2 (ja) * | 2020-02-13 | 2024-04-26 | Hoya株式会社 | 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法 |
| JP6929983B1 (ja) * | 2020-03-10 | 2021-09-01 | Hoya株式会社 | 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法 |
| JP6931729B1 (ja) * | 2020-03-27 | 2021-09-08 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法 |
| JP7679357B2 (ja) * | 2020-03-30 | 2025-05-19 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
| JP7318607B2 (ja) * | 2020-07-28 | 2023-08-01 | Ａｇｃ株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法 |
-
2023
- 2023-03-27 KR KR1020247023066A patent/KR102882943B1/ko active Active
- 2023-03-27 KR KR1020237035081A patent/KR102685023B1/ko active Active
- 2023-03-27 WO PCT/JP2023/012236 patent/WO2023190360A1/ja not_active Ceased
- 2023-03-27 JP JP2023548742A patent/JP7367902B1/ja active Active
- 2023-03-27 KR KR1020257034808A patent/KR20250153884A/ko active Pending
- 2023-03-29 TW TW114129628A patent/TW202544547A/zh unknown
- 2023-03-29 TW TW112111880A patent/TWI856588B/zh active
- 2023-03-29 TW TW113131113A patent/TWI896295B/zh active
- 2023-10-04 JP JP2023172712A patent/JP7529119B2/ja active Active
- 2023-10-20 US US18/382,356 patent/US12001133B2/en active Active
-
2024
- 2024-04-29 US US18/648,522 patent/US12306530B2/en active Active
- 2024-07-09 JP JP2024110123A patent/JP2024133671A/ja active Pending
-
2025
- 2025-03-31 US US19/096,241 patent/US20250251658A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US12306530B2 (en) | 2025-05-20 |
| JP2024133671A (ja) | 2024-10-02 |
| US12001133B2 (en) | 2024-06-04 |
| TW202544547A (zh) | 2025-11-16 |
| WO2023190360A1 (ja) | 2023-10-05 |
| US20250251658A1 (en) | 2025-08-07 |
| TWI856588B (zh) | 2024-09-21 |
| KR20230156410A (ko) | 2023-11-14 |
| US20240280890A1 (en) | 2024-08-22 |
| JP2023171930A (ja) | 2023-12-05 |
| KR102882943B1 (ko) | 2025-11-07 |
| JP7367902B1 (ja) | 2023-10-24 |
| TWI896295B (zh) | 2025-09-01 |
| US20240045320A1 (en) | 2024-02-08 |
| KR20250153884A (ko) | 2025-10-27 |
| KR20240115334A (ko) | 2024-07-25 |
| JP7529119B2 (ja) | 2024-08-06 |
| TW202447329A (zh) | 2024-12-01 |
| TW202403432A (zh) | 2024-01-16 |
| KR102685023B1 (ko) | 2024-07-16 |
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