KR102882113B1 - 기판 처리 방법 및 기판 처리 장치 - Google Patents

기판 처리 방법 및 기판 처리 장치

Info

Publication number
KR102882113B1
KR102882113B1 KR1020227022500A KR20227022500A KR102882113B1 KR 102882113 B1 KR102882113 B1 KR 102882113B1 KR 1020227022500 A KR1020227022500 A KR 1020227022500A KR 20227022500 A KR20227022500 A KR 20227022500A KR 102882113 B1 KR102882113 B1 KR 102882113B1
Authority
KR
South Korea
Prior art keywords
substrate
region
precursor
chemical bond
bond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227022500A
Other languages
English (en)
Korean (ko)
Other versions
KR20220109440A (ko
Inventor
류이치 아사코
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20220109440A publication Critical patent/KR20220109440A/ko
Application granted granted Critical
Publication of KR102882113B1 publication Critical patent/KR102882113B1/ko
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Links

Classifications

    • H01L21/31116—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H01L21/67069—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020227022500A 2019-12-12 2020-11-30 기판 처리 방법 및 기판 처리 장치 Active KR102882113B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019224476 2019-12-12
JPJP-P-2019-224476 2019-12-12
PCT/JP2020/044535 WO2021117534A1 (ja) 2019-12-12 2020-11-30 基板処理方法および基板処理装置

Publications (2)

Publication Number Publication Date
KR20220109440A KR20220109440A (ko) 2022-08-04
KR102882113B1 true KR102882113B1 (ko) 2025-11-05

Family

ID=76330215

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227022500A Active KR102882113B1 (ko) 2019-12-12 2020-11-30 기판 처리 방법 및 기판 처리 장치

Country Status (4)

Country Link
US (1) US20230010867A1 (https=)
JP (1) JPWO2021117534A1 (https=)
KR (1) KR102882113B1 (https=)
WO (1) WO2021117534A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7712854B2 (ja) * 2021-11-17 2025-07-24 Jsr株式会社 基板の製造方法及び塗工液
JPWO2025028301A1 (https=) * 2023-08-02 2025-02-06

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09190993A (ja) * 1996-01-09 1997-07-22 Hitachi Ltd 表面清浄化方法
JP2013235912A (ja) * 2012-05-08 2013-11-21 Tokyo Electron Ltd 被処理基体をエッチングする方法、及びプラズマエッチング装置
JP6396699B2 (ja) 2014-02-24 2018-09-26 東京エレクトロン株式会社 エッチング方法
US9875907B2 (en) * 2015-11-20 2018-01-23 Applied Materials, Inc. Self-aligned shielding of silicon oxide
KR102805391B1 (ko) * 2016-12-09 2025-05-12 에이에스엠 아이피 홀딩 비.브이. 열적 원자층 식각 공정
TWI729285B (zh) * 2017-06-14 2021-06-01 荷蘭商Ａｓｍ Ｉｐ控股公司 金屬薄膜的選擇性沈積
TWI757545B (zh) * 2017-09-15 2022-03-11 日商關東電化工業股份有限公司 使用酸鹵化物之原子層蝕刻
US12062538B2 (en) * 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement

Also Published As

Publication number Publication date
WO2021117534A1 (ja) 2021-06-17
US20230010867A1 (en) 2023-01-12
KR20220109440A (ko) 2022-08-04
JPWO2021117534A1 (https=) 2021-06-17

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