JPWO2021117534A1 - - Google Patents
Info
- Publication number
- JPWO2021117534A1 JPWO2021117534A1 JP2021563863A JP2021563863A JPWO2021117534A1 JP WO2021117534 A1 JPWO2021117534 A1 JP WO2021117534A1 JP 2021563863 A JP2021563863 A JP 2021563863A JP 2021563863 A JP2021563863 A JP 2021563863A JP WO2021117534 A1 JPWO2021117534 A1 JP WO2021117534A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019224476 | 2019-12-12 | ||
| PCT/JP2020/044535 WO2021117534A1 (ja) | 2019-12-12 | 2020-11-30 | 基板処理方法および基板処理装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2021117534A1 true JPWO2021117534A1 (https=) | 2021-06-17 |
Family
ID=76330215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021563863A Pending JPWO2021117534A1 (https=) | 2019-12-12 | 2020-11-30 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20230010867A1 (https=) |
| JP (1) | JPWO2021117534A1 (https=) |
| KR (1) | KR102882113B1 (https=) |
| WO (1) | WO2021117534A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7712854B2 (ja) * | 2021-11-17 | 2025-07-24 | Jsr株式会社 | 基板の製造方法及び塗工液 |
| JPWO2025028301A1 (https=) * | 2023-08-02 | 2025-02-06 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09190993A (ja) * | 1996-01-09 | 1997-07-22 | Hitachi Ltd | 表面清浄化方法 |
| JP2013235912A (ja) * | 2012-05-08 | 2013-11-21 | Tokyo Electron Ltd | 被処理基体をエッチングする方法、及びプラズマエッチング装置 |
| WO2019054490A1 (ja) * | 2017-09-15 | 2019-03-21 | 関東電化工業株式会社 | 酸ハロゲン化物を用いた原子層エッチング |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6396699B2 (ja) | 2014-02-24 | 2018-09-26 | 東京エレクトロン株式会社 | エッチング方法 |
| US9875907B2 (en) * | 2015-11-20 | 2018-01-23 | Applied Materials, Inc. | Self-aligned shielding of silicon oxide |
| KR102805391B1 (ko) * | 2016-12-09 | 2025-05-12 | 에이에스엠 아이피 홀딩 비.브이. | 열적 원자층 식각 공정 |
| TWI729285B (zh) * | 2017-06-14 | 2021-06-01 | 荷蘭商Ａｓｍ Ｉｐ控股公司 | 金屬薄膜的選擇性沈積 |
| US12062538B2 (en) * | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
-
2020
- 2020-11-30 JP JP2021563863A patent/JPWO2021117534A1/ja active Pending
- 2020-11-30 WO PCT/JP2020/044535 patent/WO2021117534A1/ja not_active Ceased
- 2020-11-30 KR KR1020227022500A patent/KR102882113B1/ko active Active
- 2020-11-30 US US17/756,780 patent/US20230010867A1/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09190993A (ja) * | 1996-01-09 | 1997-07-22 | Hitachi Ltd | 表面清浄化方法 |
| JP2013235912A (ja) * | 2012-05-08 | 2013-11-21 | Tokyo Electron Ltd | 被処理基体をエッチングする方法、及びプラズマエッチング装置 |
| WO2019054490A1 (ja) * | 2017-09-15 | 2019-03-21 | 関東電化工業株式会社 | 酸ハロゲン化物を用いた原子層エッチング |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021117534A1 (ja) | 2021-06-17 |
| US20230010867A1 (en) | 2023-01-12 |
| KR102882113B1 (ko) | 2025-11-05 |
| KR20220109440A (ko) | 2022-08-04 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220603 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230606 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20231128 |