KR102865160B1 - 노광 장치, 노광 방법 및 물품 제조 방법 - Google Patents

노광 장치, 노광 방법 및 물품 제조 방법

Info

Publication number
KR102865160B1
KR102865160B1 KR1020200131555A KR20200131555A KR102865160B1 KR 102865160 B1 KR102865160 B1 KR 102865160B1 KR 1020200131555 A KR1020200131555 A KR 1020200131555A KR 20200131555 A KR20200131555 A KR 20200131555A KR 102865160 B1 KR102865160 B1 KR 102865160B1
Authority
KR
South Korea
Prior art keywords
optical system
projection optical
light
illumination
entrance pupil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020200131555A
Other languages
English (en)
Korean (ko)
Other versions
KR20210046556A (ko
Inventor
유헤이 스미요시
다이스케 코바야시
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20210046556A publication Critical patent/KR20210046556A/ko
Application granted granted Critical
Publication of KR102865160B1 publication Critical patent/KR102865160B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optics & Photonics (AREA)
  • Microscoopes, Condenser (AREA)
KR1020200131555A 2019-10-18 2020-10-13 노광 장치, 노광 방법 및 물품 제조 방법 Active KR102865160B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019191156A JP7378265B2 (ja) 2019-10-18 2019-10-18 露光装置、露光方法及び物品の製造方法
JPJP-P-2019-191156 2019-10-18

Publications (2)

Publication Number Publication Date
KR20210046556A KR20210046556A (ko) 2021-04-28
KR102865160B1 true KR102865160B1 (ko) 2025-09-29

Family

ID=75492342

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020200131555A Active KR102865160B1 (ko) 2019-10-18 2020-10-13 노광 장치, 노광 방법 및 물품 제조 방법

Country Status (3)

Country Link
US (1) US11656554B2 (enExample)
JP (1) JP7378265B2 (enExample)
KR (1) KR102865160B1 (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007221114A (ja) * 2006-01-27 2007-08-30 Asml Netherlands Bv リソグラフィ投影装置およびデバイス製造方法
JP2010171447A (ja) * 2003-08-28 2010-08-05 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
US20170336716A1 (en) 2016-05-19 2017-11-23 Nikon Corporation Euv lithography system for dense line patterning

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3548464B2 (ja) * 1999-09-01 2004-07-28 キヤノン株式会社 露光方法及び走査型露光装置
JP2001250761A (ja) 2000-03-06 2001-09-14 Canon Inc 露光収差補正方法
JP4425239B2 (ja) 2005-05-16 2010-03-03 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置およびデバイス製造方法
JP2009010131A (ja) * 2007-06-27 2009-01-15 Canon Inc 露光装置及びデバイス製造方法
US7855776B2 (en) 2008-03-26 2010-12-21 Qimonda Ag Methods of compensating lens heating, lithographic projection system and photo mask
US20100290020A1 (en) * 2009-05-15 2010-11-18 Shinichi Mori Optical apparatus, exposure apparatus, exposure method, and method for producing device
JP5662717B2 (ja) 2010-07-08 2015-02-04 キヤノン株式会社 露光装置及びデバイスの製造方法
JP6260847B2 (ja) 2013-02-23 2018-01-17 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
WO2018194975A2 (en) * 2017-04-19 2018-10-25 Nikon Corporation Figoptical objective for operation in euv spectral region

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010171447A (ja) * 2003-08-28 2010-08-05 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2007221114A (ja) * 2006-01-27 2007-08-30 Asml Netherlands Bv リソグラフィ投影装置およびデバイス製造方法
US20170336716A1 (en) 2016-05-19 2017-11-23 Nikon Corporation Euv lithography system for dense line patterning

Also Published As

Publication number Publication date
KR20210046556A (ko) 2021-04-28
US20210116677A1 (en) 2021-04-22
JP2021067734A (ja) 2021-04-30
US11656554B2 (en) 2023-05-23
JP7378265B2 (ja) 2023-11-13

Similar Documents

Publication Publication Date Title
JP4497968B2 (ja) 照明装置、露光装置及びデバイス製造方法
JP3631094B2 (ja) 投影露光装置及びデバイス製造方法
CN110531587B (zh) 评估方法、曝光方法和用于制造物品的方法
US20080143987A1 (en) Exposure apparatus and device fabrication method
US7385672B2 (en) Exposure apparatus and method
JP2009130071A (ja) 照明光学系、露光装置及びデバイスの製造方法
US20110117503A1 (en) Exposure apparatus and device fabrication method
KR20050033492A (ko) 조명광학계 및 그것을 가진 노광장치
KR102865160B1 (ko) 노광 장치, 노광 방법 및 물품 제조 방법
JP2006245270A (ja) 露光装置及び露光方法
KR102746191B1 (ko) 노광 장치 및 물품의 제조 방법
JP5491272B2 (ja) 決定方法、露光方法及びプログラム
JP5539140B2 (ja) 決定方法、露光方法、プログラム及びコンピュータ
JP2008270502A (ja) 露光装置、露光方法およびデバイス製造方法
KR102731783B1 (ko) 노광 장치, 및 물품제조 방법
JP4950795B2 (ja) 露光装置、デバイス製造方法及び補正方法
KR102844553B1 (ko) 조명 광학계, 노광장치 및 물품의 제조방법
JP7646402B2 (ja) 照明光学系、露光装置、および物品の製造方法
JP7336922B2 (ja) 露光装置及び物品の製造方法
KR20250131207A (ko) 노광 장치, 조정 방법 및 물품의 제조 방법
JP2009130065A (ja) 露光装置及びデバイス製造方法
JP4366374B2 (ja) 露光装置
JP2007173533A (ja) 露光装置、露光方法及びデバイス製造方法
JP2022185871A (ja) 露光方法、露光装置、および物品製造方法
JP2011061164A (ja) 照明条件決定方法、プログラムおよびデバイス製造方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601