KR102861849B1 - 고체 촬상 장치 및 전자 기기 - Google Patents

고체 촬상 장치 및 전자 기기

Info

Publication number
KR102861849B1
KR102861849B1 KR1020217011466A KR20217011466A KR102861849B1 KR 102861849 B1 KR102861849 B1 KR 102861849B1 KR 1020217011466 A KR1020217011466 A KR 1020217011466A KR 20217011466 A KR20217011466 A KR 20217011466A KR 102861849 B1 KR102861849 B1 KR 102861849B1
Authority
KR
South Korea
Prior art keywords
insulating film
solid
imaging device
state imaging
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217011466A
Other languages
English (en)
Korean (ko)
Other versions
KR20210093859A (ko
Inventor
쇼고 후루야
요리토 사카노
료 타카하시
아츠시 스즈키
료이치 요시카와
준 스에나가
신이치 코가
요헤이 치바
타다마사 시오야마
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 세미컨덕터 솔루션즈 가부시키가이샤 filed Critical 소니 세미컨덕터 솔루션즈 가부시키가이샤
Publication of KR20210093859A publication Critical patent/KR20210093859A/ko
Application granted granted Critical
Publication of KR102861849B1 publication Critical patent/KR102861849B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020217011466A 2018-11-19 2019-11-19 고체 촬상 장치 및 전자 기기 Active KR102861849B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2018-216342 2018-11-19
JP2018216342 2018-11-19
JP2019206785 2019-11-15
JPJP-P-2019-206785 2019-11-15
PCT/JP2019/045276 WO2020105634A1 (ja) 2018-11-19 2019-11-19 固体撮像装置および電子機器

Publications (2)

Publication Number Publication Date
KR20210093859A KR20210093859A (ko) 2021-07-28
KR102861849B1 true KR102861849B1 (ko) 2025-09-22

Family

ID=70773125

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217011466A Active KR102861849B1 (ko) 2018-11-19 2019-11-19 고체 촬상 장치 및 전자 기기

Country Status (7)

Country Link
US (1) US12490529B2 (enExample)
JP (1) JP7520721B2 (enExample)
KR (1) KR102861849B1 (enExample)
CN (1) CN112970117A (enExample)
DE (1) DE112019005789T5 (enExample)
TW (1) TWI835928B (enExample)
WO (1) WO2020105634A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4084090B1 (en) * 2019-12-25 2024-10-09 Sony Semiconductor Solutions Corporation Light-receiving element and light-receiving device
WO2022059132A1 (ja) * 2020-09-17 2022-03-24 キオクシア株式会社 半導体記憶装置
JP2023064358A (ja) * 2021-10-26 2023-05-11 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
JP2024029309A (ja) * 2022-08-22 2024-03-06 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005347655A (ja) * 2004-06-07 2005-12-15 Canon Inc 固体撮像装置
JP2009283552A (ja) * 2008-05-20 2009-12-03 Panasonic Corp 固体撮像素子
JP2010109136A (ja) * 2008-10-30 2010-05-13 Sony Corp 固体撮像装置、その製造方法および撮像装置
JP2013161868A (ja) * 2012-02-02 2013-08-19 Sony Corp 固体撮像装置、固体撮像装置の製造方法、及び、電子機器
WO2015068315A1 (ja) * 2013-11-08 2015-05-14 パナソニックＩｐマネジメント株式会社 固体撮像装置
WO2015152297A1 (ja) * 2014-03-31 2015-10-08 株式会社ニコン 検出素子、ロックイン検出装置、基板、および検出素子の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000349259A (ja) * 1999-06-09 2000-12-15 Sanyo Electric Co Ltd 半導体装置及びその製造方法
KR100738516B1 (ko) * 2006-05-25 2007-07-11 (주) 픽셀플러스 커플링 캐패시터를 사용하는 핀드 포토다이오드를 포함하는액티브 픽셀 및 그의 신호 감지 방법
JP2012129799A (ja) * 2010-12-15 2012-07-05 Sony Corp 固体撮像素子および駆動方法、並びに電子機器
US9490373B2 (en) 2012-02-02 2016-11-08 Sony Corporation Solid-state imaging device and electronic apparatus with improved storage portion
CN103258829A (zh) 2012-02-16 2013-08-21 索尼公司 固态成像装置、图像传感器及其制造方法以及电子设备
CN108807434B (zh) * 2017-04-26 2023-12-05 松下知识产权经营株式会社 摄像装置及照相机系统
JP7100315B2 (ja) 2018-05-30 2022-07-13 三菱瓦斯化学株式会社 漂白パルプの製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005347655A (ja) * 2004-06-07 2005-12-15 Canon Inc 固体撮像装置
JP2009283552A (ja) * 2008-05-20 2009-12-03 Panasonic Corp 固体撮像素子
JP2010109136A (ja) * 2008-10-30 2010-05-13 Sony Corp 固体撮像装置、その製造方法および撮像装置
JP2013161868A (ja) * 2012-02-02 2013-08-19 Sony Corp 固体撮像装置、固体撮像装置の製造方法、及び、電子機器
WO2015068315A1 (ja) * 2013-11-08 2015-05-14 パナソニックＩｐマネジメント株式会社 固体撮像装置
WO2015152297A1 (ja) * 2014-03-31 2015-10-08 株式会社ニコン 検出素子、ロックイン検出装置、基板、および検出素子の製造方法

Also Published As

Publication number Publication date
DE112019005789T5 (de) 2021-09-02
US12490529B2 (en) 2025-12-02
US20220013557A1 (en) 2022-01-13
TW202029489A (zh) 2020-08-01
JP7520721B2 (ja) 2024-07-23
TWI835928B (zh) 2024-03-21
JPWO2020105634A1 (ja) 2021-09-30
KR20210093859A (ko) 2021-07-28
CN112970117A (zh) 2021-06-15
WO2020105634A1 (ja) 2020-05-28

Similar Documents

Publication Publication Date Title
JP7645810B2 (ja) 固体撮像装置および電子機器
JP7605732B2 (ja) 撮像装置および電子機器
KR102861849B1 (ko) 고체 촬상 장치 및 전자 기기
US11516418B2 (en) Solid-state imaging apparatus
US11997400B2 (en) Imaging element and electronic apparatus
JP7589142B2 (ja) 撮像装置および電子機器
TW202247445A (zh) 固體攝像元件、固體攝像元件之製造方法及電子機器
CN112602195B (zh) 摄像装置和电子设备
US20220239849A1 (en) Imaging device and electronic apparatus
KR20240163666A (ko) 고체 촬상 장치 및 전자 기기
KR102786633B1 (ko) 촬상 장치
WO2022113757A1 (ja) 固体撮像装置及びその製造方法
US20250267962A1 (en) Imaging element and electronic device
CN112602320A (zh) 固态成像装置和电子设备
US12003878B2 (en) Imaging device
WO2023127512A1 (ja) 撮像装置、電子機器
WO2025197674A1 (en) Photodetection device
WO2026004392A1 (ja) 固体撮像素子
JP2025019415A (ja) 撮像素子および電子機器
WO2025154549A1 (ja) 光検出装置及び電子機器
WO2024038828A1 (ja) 光検出装置
WO2024252696A1 (ja) 撮像装置
TW202520927A (zh) 攝像裝置及其製造方法、及電子機器

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

F11 Ip right granted following substantive examination

Free format text: ST27 STATUS EVENT CODE: A-2-4-F10-F11-EXM-PR0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

U12 Designation fee paid

Free format text: ST27 STATUS EVENT CODE: A-2-2-U10-U12-OTH-PR1002 (AS PROVIDED BY THE NATIONAL OFFICE)

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

Q13 Ip right document published

Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE)