CN112970117A - 固态成像装置和电子设备 - Google Patents

固态成像装置和电子设备 Download PDF

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Publication number
CN112970117A
CN112970117A CN201980073682.XA CN201980073682A CN112970117A CN 112970117 A CN112970117 A CN 112970117A CN 201980073682 A CN201980073682 A CN 201980073682A CN 112970117 A CN112970117 A CN 112970117A
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CN
China
Prior art keywords
imaging device
solid
state imaging
insulating film
semiconductor layer
Prior art date
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Pending
Application number
CN201980073682.XA
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English (en)
Chinese (zh)
Inventor
古屋晶吾
坂野頼人
高桥了
铃木笃
吉川良一
末永淳
古贺慎一
千叶洋平
塩山正真
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN112970117A publication Critical patent/CN112970117A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201980073682.XA 2018-11-19 2019-11-19 固态成像装置和电子设备 Pending CN112970117A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018216342 2018-11-19
JP2018-216342 2018-11-19
JP2019206785 2019-11-15
JP2019-206785 2019-11-15
PCT/JP2019/045276 WO2020105634A1 (ja) 2018-11-19 2019-11-19 固体撮像装置および電子機器

Publications (1)

Publication Number Publication Date
CN112970117A true CN112970117A (zh) 2021-06-15

Family

ID=70773125

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980073682.XA Pending CN112970117A (zh) 2018-11-19 2019-11-19 固态成像装置和电子设备

Country Status (7)

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US (1) US12490529B2 (enExample)
JP (1) JP7520721B2 (enExample)
KR (1) KR102861849B1 (enExample)
CN (1) CN112970117A (enExample)
DE (1) DE112019005789T5 (enExample)
TW (1) TWI835928B (enExample)
WO (1) WO2020105634A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4084090B1 (en) * 2019-12-25 2024-10-09 Sony Semiconductor Solutions Corporation Light-receiving element and light-receiving device
WO2022059132A1 (ja) * 2020-09-17 2022-03-24 キオクシア株式会社 半導体記憶装置
JP2023064358A (ja) * 2021-10-26 2023-05-11 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
JP2024029309A (ja) * 2022-08-22 2024-03-06 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005347655A (ja) * 2004-06-07 2005-12-15 Canon Inc 固体撮像装置
US20090290058A1 (en) * 2008-05-20 2009-11-26 Ryohei Miyagawa Solid-state imaging device
CN101728406A (zh) * 2008-10-30 2010-06-09 索尼株式会社 固态成像装置及其制造方法和成像设备
CN103258829A (zh) * 2012-02-16 2013-08-21 索尼公司 固态成像装置、图像传感器及其制造方法以及电子设备
WO2015068315A1 (ja) * 2013-11-08 2015-05-14 パナソニックＩｐマネジメント株式会社 固体撮像装置
CN106134182A (zh) * 2014-03-31 2016-11-16 株式会社尼康 检测元件、锁定检测装置、基板及检测元件的制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000349259A (ja) * 1999-06-09 2000-12-15 Sanyo Electric Co Ltd 半導体装置及びその製造方法
KR100738516B1 (ko) * 2006-05-25 2007-07-11 (주) 픽셀플러스 커플링 캐패시터를 사용하는 핀드 포토다이오드를 포함하는액티브 픽셀 및 그의 신호 감지 방법
JP2012129799A (ja) * 2010-12-15 2012-07-05 Sony Corp 固体撮像素子および駆動方法、並びに電子機器
JP5970834B2 (ja) 2012-02-02 2016-08-17 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、及び、電子機器
US9490373B2 (en) 2012-02-02 2016-11-08 Sony Corporation Solid-state imaging device and electronic apparatus with improved storage portion
CN108807434B (zh) * 2017-04-26 2023-12-05 松下知识产权经营株式会社 摄像装置及照相机系统
JP7100315B2 (ja) 2018-05-30 2022-07-13 三菱瓦斯化学株式会社 漂白パルプの製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005347655A (ja) * 2004-06-07 2005-12-15 Canon Inc 固体撮像装置
US20090290058A1 (en) * 2008-05-20 2009-11-26 Ryohei Miyagawa Solid-state imaging device
CN101728406A (zh) * 2008-10-30 2010-06-09 索尼株式会社 固态成像装置及其制造方法和成像设备
CN103258829A (zh) * 2012-02-16 2013-08-21 索尼公司 固态成像装置、图像传感器及其制造方法以及电子设备
WO2015068315A1 (ja) * 2013-11-08 2015-05-14 パナソニックＩｐマネジメント株式会社 固体撮像装置
CN106134182A (zh) * 2014-03-31 2016-11-16 株式会社尼康 检测元件、锁定检测装置、基板及检测元件的制造方法

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Publication number Publication date
KR102861849B1 (ko) 2025-09-22
DE112019005789T5 (de) 2021-09-02
US12490529B2 (en) 2025-12-02
US20220013557A1 (en) 2022-01-13
TW202029489A (zh) 2020-08-01
JP7520721B2 (ja) 2024-07-23
TWI835928B (zh) 2024-03-21
JPWO2020105634A1 (ja) 2021-09-30
KR20210093859A (ko) 2021-07-28
WO2020105634A1 (ja) 2020-05-28

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