KR102860264B1 - 주사 노광장치, 주사 노광방법 및 물품 제조 방법 - Google Patents

주사 노광장치, 주사 노광방법 및 물품 제조 방법

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Publication number
KR102860264B1
KR102860264B1 KR1020210094010A KR20210094010A KR102860264B1 KR 102860264 B1 KR102860264 B1 KR 102860264B1 KR 1020210094010 A KR1020210094010 A KR 1020210094010A KR 20210094010 A KR20210094010 A KR 20210094010A KR 102860264 B1 KR102860264 B1 KR 102860264B1
Authority
KR
South Korea
Prior art keywords
exposure
area
substrate
scanning
adjustment mechanism
Prior art date
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Application number
KR1020210094010A
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English (en)
Korean (ko)
Other versions
KR20220013914A (ko
Inventor
타쿠로 우에노
히로아키 이타바시
Original Assignee
캐논 가부시끼가이샤
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Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20220013914A publication Critical patent/KR20220013914A/ko
Application granted granted Critical
Publication of KR102860264B1 publication Critical patent/KR102860264B1/ko
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020210094010A 2020-07-27 2021-07-19 주사 노광장치, 주사 노광방법 및 물품 제조 방법 Active KR102860264B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020126729A JP7550559B2 (ja) 2020-07-27 2020-07-27 走査露光装置、走査露光方法および物品製造方法
JPJP-P-2020-126729 2020-07-27

Publications (2)

Publication Number Publication Date
KR20220013914A KR20220013914A (ko) 2022-02-04
KR102860264B1 true KR102860264B1 (ko) 2025-09-16

Family

ID=79735073

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210094010A Active KR102860264B1 (ko) 2020-07-27 2021-07-19 주사 노광장치, 주사 노광방법 및 물품 제조 방법

Country Status (3)

Country Link
JP (1) JP7550559B2 (enExample)
KR (1) KR102860264B1 (enExample)
CN (2) CN113985702B (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030081191A1 (en) 1995-03-16 2003-05-01 Nikon Corporation Exposure apparatus and method
JP2017053888A (ja) 2015-09-07 2017-03-16 キヤノン株式会社 露光方法および露光装置、ならびに物品の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5777724A (en) * 1994-08-24 1998-07-07 Suzuki; Kazuaki Exposure amount control device
JPH08255739A (ja) * 1995-03-16 1996-10-01 Nikon Corp 露光装置
AU6853698A (en) * 1997-04-18 1998-11-13 Nikon Corporation Method and device for exposure control, method and device for exposure, and method of manufacture of device
JP2000277408A (ja) * 1999-03-23 2000-10-06 Nikon Corp 露光装置および露光方法
US20090203320A1 (en) * 2008-02-07 2009-08-13 Qualcomm Incorporated Asynchronous interference management based on timeslot overlap
JP5451222B2 (ja) * 2009-07-10 2014-03-26 キヤノン株式会社 露光装置及びその制御方法、デバイス製造方法
JP2013104934A (ja) * 2011-11-11 2013-05-30 Tokyo Electron Ltd 露光装置及び露光方法
JP6243616B2 (ja) 2013-03-26 2017-12-06 キヤノン株式会社 露光装置および物品の製造方法
JP2018010105A (ja) 2016-07-13 2018-01-18 キヤノン株式会社 露光装置、露光方法、および物品製造方法
CN110431487B (zh) * 2017-03-17 2021-08-10 株式会社尼康 照明装置及方法、曝光装置及方法、以及元件制造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030081191A1 (en) 1995-03-16 2003-05-01 Nikon Corporation Exposure apparatus and method
JP2017053888A (ja) 2015-09-07 2017-03-16 キヤノン株式会社 露光方法および露光装置、ならびに物品の製造方法

Also Published As

Publication number Publication date
CN113985702A (zh) 2022-01-28
KR20220013914A (ko) 2022-02-04
CN113985702B (zh) 2025-08-29
JP7550559B2 (ja) 2024-09-13
CN120722674A (zh) 2025-09-30
JP2022023646A (ja) 2022-02-08

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