KR102828235B1 - 보호 코팅을 갖는 프로세스 챔버 프로세스 키트 - Google Patents
보호 코팅을 갖는 프로세스 챔버 프로세스 키트 Download PDFInfo
- Publication number
- KR102828235B1 KR102828235B1 KR1020217001257A KR20217001257A KR102828235B1 KR 102828235 B1 KR102828235 B1 KR 102828235B1 KR 1020217001257 A KR1020217001257 A KR 1020217001257A KR 20217001257 A KR20217001257 A KR 20217001257A KR 102828235 B1 KR102828235 B1 KR 102828235B1
- Authority
- KR
- South Korea
- Prior art keywords
- chamber
- substrate material
- metallic substrate
- chamber component
- flat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
- C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
- C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
- C23C24/085—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H01L21/02274—
-
- H01L21/56—
-
- H01L21/67017—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Or Physical Treatment Of Fibers (AREA)
- Treatment Of Fiber Materials (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020257021611A KR20250107284A (ko) | 2018-06-14 | 2019-05-21 | 보호 코팅을 갖는 프로세스 챔버 프로세스 키트 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862685098P | 2018-06-14 | 2018-06-14 | |
| US62/685,098 | 2018-06-14 | ||
| PCT/US2019/033259 WO2019240915A1 (en) | 2018-06-14 | 2019-05-21 | Process chamber process kit with protective coating |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257021611A Division KR20250107284A (ko) | 2018-06-14 | 2019-05-21 | 보호 코팅을 갖는 프로세스 챔버 프로세스 키트 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20210008931A KR20210008931A (ko) | 2021-01-25 |
| KR102828235B1 true KR102828235B1 (ko) | 2025-07-03 |
Family
ID=68840245
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020217001257A Active KR102828235B1 (ko) | 2018-06-14 | 2019-05-21 | 보호 코팅을 갖는 프로세스 챔버 프로세스 키트 |
| KR1020257021611A Pending KR20250107284A (ko) | 2018-06-14 | 2019-05-21 | 보호 코팅을 갖는 프로세스 챔버 프로세스 키트 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257021611A Pending KR20250107284A (ko) | 2018-06-14 | 2019-05-21 | 보호 코팅을 갖는 프로세스 챔버 프로세스 키트 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US12354843B2 (https=) |
| JP (2) | JP7405776B2 (https=) |
| KR (2) | KR102828235B1 (https=) |
| CN (2) | CN112236839B (https=) |
| TW (2) | TWI880527B (https=) |
| WO (1) | WO2019240915A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11664247B2 (en) * | 2020-10-16 | 2023-05-30 | Applied Materials, Inc. | Dynamic interface for providing a symmetric radio frequency return path |
| US20230064070A1 (en) * | 2021-08-30 | 2023-03-02 | Auo Crystal Corporation | Semiconductor processing equipment part and method for making the same |
| US20230215702A1 (en) * | 2021-12-30 | 2023-07-06 | Applied Materials, Inc. | Uniformity control for plasma processing using wall recombination |
| WO2024097505A1 (en) * | 2022-10-31 | 2024-05-10 | Lam Research Corporation | Component with a dual layer hermetic atomic layer deposition coatings for a semiconductor processing chamber |
| US20250201527A1 (en) * | 2023-12-19 | 2025-06-19 | Applied Materials, Inc. | High Conformal Coating on Textured Surface of Processing Chamber Component |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3362552B2 (ja) * | 1995-03-10 | 2003-01-07 | 東京エレクトロン株式会社 | 成膜処理装置 |
| JPH11238722A (ja) | 1997-12-17 | 1999-08-31 | Matsushita Electron Corp | プラズマ処理装置及びプラズマ処理方法 |
| US6251216B1 (en) * | 1997-12-17 | 2001-06-26 | Matsushita Electronics Corporation | Apparatus and method for plasma processing |
| US6863926B2 (en) | 2002-01-15 | 2005-03-08 | David Mark Lynn | Corrosive-resistant coating over aluminum substrates for use in plasma deposition and etch environments |
| US6780787B2 (en) * | 2002-03-21 | 2004-08-24 | Lam Research Corporation | Low contamination components for semiconductor processing apparatus and methods for making components |
| US7311797B2 (en) * | 2002-06-27 | 2007-12-25 | Lam Research Corporation | Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor |
| US20040033361A1 (en) * | 2002-08-06 | 2004-02-19 | Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.) | Component of glass-like carbon for CVD apparatus and process for production thereof |
| US7250114B2 (en) * | 2003-05-30 | 2007-07-31 | Lam Research Corporation | Methods of finishing quartz glass surfaces and components made by the methods |
| JP4606121B2 (ja) * | 2004-01-29 | 2011-01-05 | 京セラ株式会社 | 耐食膜積層耐食性部材およびその製造方法 |
| JP2006128370A (ja) * | 2004-10-28 | 2006-05-18 | Tokyo Electron Ltd | 成膜装置、成膜方法、プログラムおよび記録媒体 |
| KR100915722B1 (ko) * | 2005-06-23 | 2009-09-04 | 도쿄엘렉트론가부시키가이샤 | 반도체 처리 장치용의 구성 부재 및 그 제조 방법, 및반도체 처리 장치 |
| US20060292310A1 (en) * | 2005-06-27 | 2006-12-28 | Applied Materials, Inc. | Process kit design to reduce particle generation |
| US7541094B1 (en) * | 2006-03-03 | 2009-06-02 | Quantum Global Technologies, Llc | Firepolished quartz parts for use in semiconductor processing |
| US20080063798A1 (en) * | 2006-08-30 | 2008-03-13 | Kher Shreyas S | Precursors and hardware for cvd and ald |
| US8097105B2 (en) | 2007-01-11 | 2012-01-17 | Lam Research Corporation | Extending lifetime of yttrium oxide as a plasma chamber material |
| AT504482B1 (de) | 2007-03-01 | 2008-06-15 | Ruebig Gmbh & Co Kg | Verfahren zur herstellung einer beschichtung |
| JP5475261B2 (ja) | 2008-03-31 | 2014-04-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| WO2010053687A2 (en) * | 2008-11-04 | 2010-05-14 | Praxair Technology, Inc. | Thermal spray coatings for semiconductor applications |
| US8206829B2 (en) * | 2008-11-10 | 2012-06-26 | Applied Materials, Inc. | Plasma resistant coatings for plasma chamber components |
| WO2012057963A2 (en) | 2010-10-28 | 2012-05-03 | Applied Materials, Inc. | High purity aluminum coating hard anodization |
| JP2014158009A (ja) * | 2012-07-03 | 2014-08-28 | Hitachi High-Technologies Corp | 熱処理装置 |
| US9337002B2 (en) | 2013-03-12 | 2016-05-10 | Lam Research Corporation | Corrosion resistant aluminum coating on plasma chamber components |
| GB2513575B (en) | 2013-04-29 | 2017-05-31 | Keronite Int Ltd | Corrosion and erosion-resistant mixed oxide coatings for the protection of chemical and plasma process chamber components |
| US9711334B2 (en) | 2013-07-19 | 2017-07-18 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based thin film coatings on process rings |
| US9583369B2 (en) * | 2013-07-20 | 2017-02-28 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles |
| JP6058821B2 (ja) | 2014-01-17 | 2017-01-11 | イオンズ カンパニー リミテッド | 複合被膜粒子粒径を有する被膜の形成方法およびこれによる被膜 |
| JP2017512375A (ja) * | 2014-01-31 | 2017-05-18 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | チャンバコーティング |
| US9869013B2 (en) | 2014-04-25 | 2018-01-16 | Applied Materials, Inc. | Ion assisted deposition top coat of rare-earth oxide |
| US9790581B2 (en) * | 2014-06-25 | 2017-10-17 | Fm Industries, Inc. | Emissivity controlled coatings for semiconductor chamber components |
| US20160258064A1 (en) | 2015-03-06 | 2016-09-08 | Applied Materials, Inc. | Barrier anodization methods to develop aluminum oxide layer for plasma equipment components |
| EP3165629A1 (en) | 2015-11-06 | 2017-05-10 | Rolls-Royce Corporation | Plasma spray physical vapor deposition deposited environmental barrier coating |
| US20170291856A1 (en) * | 2016-04-06 | 2017-10-12 | Applied Materials, Inc. | Solution precursor plasma spray of ceramic coating for semiconductor chamber applications |
| US10262839B2 (en) * | 2016-06-14 | 2019-04-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Aluminum apparatus with aluminum oxide layer and method for forming the same |
| US20180016678A1 (en) | 2016-07-15 | 2018-01-18 | Applied Materials, Inc. | Multi-layer coating with diffusion barrier layer and erosion resistant layer |
| TWI721216B (zh) * | 2016-10-13 | 2021-03-11 | 美商應用材料股份有限公司 | 用於電漿處理裝置中的腔室部件、包含其之裝置及製造其之方法 |
-
2019
- 2019-05-21 WO PCT/US2019/033259 patent/WO2019240915A1/en not_active Ceased
- 2019-05-21 CN CN201980037849.7A patent/CN112236839B/zh active Active
- 2019-05-21 JP JP2020568515A patent/JP7405776B2/ja active Active
- 2019-05-21 US US16/418,274 patent/US12354843B2/en active Active
- 2019-05-21 CN CN202411905565.4A patent/CN119890023A/zh active Pending
- 2019-05-21 KR KR1020217001257A patent/KR102828235B1/ko active Active
- 2019-05-21 KR KR1020257021611A patent/KR20250107284A/ko active Pending
- 2019-06-12 TW TW112148937A patent/TWI880527B/zh active
- 2019-06-12 TW TW108120249A patent/TWI828704B/zh active
-
2023
- 2023-04-05 US US18/131,306 patent/US20230245863A1/en not_active Abandoned
- 2023-12-14 JP JP2023210900A patent/JP7776483B2/ja active Active
-
2025
- 2025-09-02 US US19/316,924 patent/US20250385080A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN119890023A (zh) | 2025-04-25 |
| CN112236839B (zh) | 2025-01-03 |
| JP7776483B2 (ja) | 2025-11-26 |
| KR20250107284A (ko) | 2025-07-11 |
| WO2019240915A1 (en) | 2019-12-19 |
| TW202418348A (zh) | 2024-05-01 |
| JP7405776B2 (ja) | 2023-12-26 |
| CN112236839A (zh) | 2021-01-15 |
| US20250385080A1 (en) | 2025-12-18 |
| US20190385825A1 (en) | 2019-12-19 |
| TW202013426A (zh) | 2020-04-01 |
| US20230245863A1 (en) | 2023-08-03 |
| US12354843B2 (en) | 2025-07-08 |
| JP2024037895A (ja) | 2024-03-19 |
| KR20210008931A (ko) | 2021-01-25 |
| JP2021527328A (ja) | 2021-10-11 |
| TWI880527B (zh) | 2025-04-11 |
| TWI828704B (zh) | 2024-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102828235B1 (ko) | 보호 코팅을 갖는 프로세스 챔버 프로세스 키트 | |
| KR102490014B1 (ko) | 플라즈마 컴포넌트들을 위한 프리-시즈닝된 부식 저항성 코팅을 개발하기 위한 이트륨 플루오라이드 및 이트륨 옥시플루오라이드로의 이트리아의 화학 변환 | |
| CN111986975B (zh) | 增进工艺均匀性的方法及系统 | |
| KR100834324B1 (ko) | 개선된 파티클 성능을 가지는 반도체 공정 설비 | |
| KR101087925B1 (ko) | 기판 표면을 세정하기 위한 방법 및 장치 | |
| US20050284573A1 (en) | Bare aluminum baffles for resist stripping chambers | |
| TWI425882B (zh) | 減少副產物沉積在電漿處理系統之方法與配置 | |
| US12334354B2 (en) | Sidewall passivation for plasma etching | |
| KR20090021097A (ko) | 처리 장치 | |
| TW201643271A (zh) | 用於形成電漿設備組件之氧化鋁層的阻隔層陽極化法 | |
| KR20180018824A (ko) | 조정 가능한 원격 해리 | |
| KR101559874B1 (ko) | 기판 처리 장치 및 챔버 제조 방법 | |
| JP7797705B2 (ja) | パルスエッチング処理 | |
| US20230282450A1 (en) | Remote plasma source showerhead assembly with aluminum fluoride plasma exposed surface | |
| CN120883315A (zh) | 具有先进涂层技术的半导体腔室组件 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| A201 | Request for examination | ||
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| PA0104 | Divisional application for international application |
St.27 status event code: A-0-1-A10-A16-div-PA0104 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U12-oth-PR1002 Fee payment year number: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |