TWI880527B - 電漿處理方法與用於電漿處理腔室的腔室部件及其製造方法 - Google Patents

電漿處理方法與用於電漿處理腔室的腔室部件及其製造方法 Download PDF

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Publication number
TWI880527B
TWI880527B TW112148937A TW112148937A TWI880527B TW I880527 B TWI880527 B TW I880527B TW 112148937 A TW112148937 A TW 112148937A TW 112148937 A TW112148937 A TW 112148937A TW I880527 B TWI880527 B TW I880527B
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TW
Taiwan
Prior art keywords
silicon dioxide
chamber
plasma
dioxide layer
metal
Prior art date
Application number
TW112148937A
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English (en)
Chinese (zh)
Other versions
TW202418348A (zh
Inventor
菅 吳
煒 劉
泰瑞莎克拉莫 瓜立尼
琳林 王
麥爾肯 畢凡
拉拉 華瑞恰克
Original Assignee
美商應用材料股份有限公司
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Publication of TW202418348A publication Critical patent/TW202418348A/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
    • C23C24/085—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Or Physical Treatment Of Fibers (AREA)
  • Treatment Of Fiber Materials (AREA)
  • Chemical Vapour Deposition (AREA)
TW112148937A 2018-06-14 2019-06-12 電漿處理方法與用於電漿處理腔室的腔室部件及其製造方法 TWI880527B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862685098P 2018-06-14 2018-06-14
US62/685,098 2018-06-14

Publications (2)

Publication Number Publication Date
TW202418348A TW202418348A (zh) 2024-05-01
TWI880527B true TWI880527B (zh) 2025-04-11

Family

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Family Applications (2)

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TW112148937A TWI880527B (zh) 2018-06-14 2019-06-12 電漿處理方法與用於電漿處理腔室的腔室部件及其製造方法
TW108120249A TWI828704B (zh) 2018-06-14 2019-06-12 電漿處理方法與用於電漿處理腔室的腔室部件及其製造方法

Family Applications After (1)

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Country Status (6)

Country Link
US (3) US12354843B2 (https=)
JP (2) JP7405776B2 (https=)
KR (2) KR102828235B1 (https=)
CN (2) CN112236839B (https=)
TW (2) TWI880527B (https=)
WO (1) WO2019240915A1 (https=)

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US20230064070A1 (en) * 2021-08-30 2023-03-02 Auo Crystal Corporation Semiconductor processing equipment part and method for making the same
US20230215702A1 (en) * 2021-12-30 2023-07-06 Applied Materials, Inc. Uniformity control for plasma processing using wall recombination
WO2024097505A1 (en) * 2022-10-31 2024-05-10 Lam Research Corporation Component with a dual layer hermetic atomic layer deposition coatings for a semiconductor processing chamber
US20250201527A1 (en) * 2023-12-19 2025-06-19 Applied Materials, Inc. High Conformal Coating on Textured Surface of Processing Chamber Component

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Also Published As

Publication number Publication date
CN119890023A (zh) 2025-04-25
CN112236839B (zh) 2025-01-03
JP7776483B2 (ja) 2025-11-26
KR20250107284A (ko) 2025-07-11
WO2019240915A1 (en) 2019-12-19
TW202418348A (zh) 2024-05-01
JP7405776B2 (ja) 2023-12-26
CN112236839A (zh) 2021-01-15
US20250385080A1 (en) 2025-12-18
KR102828235B1 (ko) 2025-07-03
US20190385825A1 (en) 2019-12-19
TW202013426A (zh) 2020-04-01
US20230245863A1 (en) 2023-08-03
US12354843B2 (en) 2025-07-08
JP2024037895A (ja) 2024-03-19
KR20210008931A (ko) 2021-01-25
JP2021527328A (ja) 2021-10-11
TWI828704B (zh) 2024-01-11

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