KR102825479B1 - 기판 세정 방법 및 기판 세정 장치 - Google Patents

기판 세정 방법 및 기판 세정 장치 Download PDF

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Publication number
KR102825479B1
KR102825479B1 KR1020227015845A KR20227015845A KR102825479B1 KR 102825479 B1 KR102825479 B1 KR 102825479B1 KR 1020227015845 A KR1020227015845 A KR 1020227015845A KR 20227015845 A KR20227015845 A KR 20227015845A KR 102825479 B1 KR102825479 B1 KR 102825479B1
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South Korea
Prior art keywords
nozzle
gas
substrate
cluster
control unit
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KR1020227015845A
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English (en)
Korean (ko)
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KR20220086606A (ko
Inventor
히로키 오노
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도쿄엘렉트론가부시키가이샤
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    • H01L21/02046—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0404—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • H01L21/67028—
    • H01L21/67103—
    • H01L21/67109—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020227015845A 2019-10-23 2020-10-12 기판 세정 방법 및 기판 세정 장치 Active KR102825479B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2019-193049 2019-10-23
JP2019193049 2019-10-23
PCT/JP2020/038507 WO2021079779A1 (ja) 2019-10-23 2020-10-12 基板洗浄方法、および基板洗浄装置

Publications (2)

Publication Number Publication Date
KR20220086606A KR20220086606A (ko) 2022-06-23
KR102825479B1 true KR102825479B1 (ko) 2025-06-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227015845A Active KR102825479B1 (ko) 2019-10-23 2020-10-12 기판 세정 방법 및 기판 세정 장치

Country Status (6)

Country Link
US (2) US12198947B2 (https=)
JP (1) JP7258176B2 (https=)
KR (1) KR102825479B1 (https=)
CN (1) CN114556525B (https=)
TW (1) TWI867065B (https=)
WO (1) WO2021079779A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121446781B (zh) * 2026-01-07 2026-04-28 四川禾牧机械制造有限公司 一种碳头输送喷射清理系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100193472A1 (en) * 2009-02-04 2010-08-05 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating
JP2013046001A (ja) * 2011-08-26 2013-03-04 Iwatani Internatl Corp クラスタによる加工方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833319A (en) * 1987-02-27 1989-05-23 Hughes Aircraft Company Carrier gas cluster source for thermally conditioned clusters
JPH0794489A (ja) * 1993-09-20 1995-04-07 Tokyo Electron Ltd 処理装置のクリーニング方法
JPH09232325A (ja) * 1996-02-26 1997-09-05 Komatsu Electron Metals Co Ltd シリコンウェーハの熱処理方法
US6534608B2 (en) * 2000-12-07 2003-03-18 Univation Technologies, Llc Support materials for use with polymerization catalysts
JP4426989B2 (ja) * 2005-03-17 2010-03-03 キヤノンアネルバ株式会社 薄膜作製方法並びに薄膜作製装置及び水蒸気供給装置
JP2007165661A (ja) * 2005-12-14 2007-06-28 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP4802002B2 (ja) * 2006-01-30 2011-10-26 芝浦メカトロニクス株式会社 基板の洗浄処理装置及び洗浄処理方法
JP2008043909A (ja) * 2006-08-21 2008-02-28 Air Water Inc ドライアイススノー洗浄装置および方法
US8056832B2 (en) * 2008-10-30 2011-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Jetspray nozzle and method for cleaning photo masks and semiconductor wafers
JP2011168881A (ja) * 2010-01-25 2011-09-01 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
JP5984424B2 (ja) * 2012-02-27 2016-09-06 国立大学法人京都大学 基板洗浄方法、基板洗浄装置及び真空処理装置
JP2015026745A (ja) * 2013-07-26 2015-02-05 東京エレクトロン株式会社 基板洗浄方法及び基板洗浄装置
JP6311236B2 (ja) * 2013-08-20 2018-04-18 東京エレクトロン株式会社 基板洗浄装置
JP6690915B2 (ja) * 2014-10-06 2020-04-28 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド 極低温流体混合物で基板を処理するシステムおよび方法
US10014191B2 (en) * 2014-10-06 2018-07-03 Tel Fsi, Inc. Systems and methods for treating substrates with cryogenic fluid mixtures
US9984858B2 (en) * 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
WO2017094389A1 (ja) * 2015-11-30 2017-06-08 東京エレクトロン株式会社 基板洗浄方法
JP6596340B2 (ja) * 2016-01-21 2019-10-23 東京エレクトロン株式会社 基板洗浄方法および基板洗浄装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100193472A1 (en) * 2009-02-04 2010-08-05 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating
JP2013046001A (ja) * 2011-08-26 2013-03-04 Iwatani Internatl Corp クラスタによる加工方法

Also Published As

Publication number Publication date
TW202123315A (zh) 2021-06-16
KR20220086606A (ko) 2022-06-23
US12198947B2 (en) 2025-01-14
WO2021079779A1 (ja) 2021-04-29
CN114556525B (zh) 2025-01-10
US20220367214A1 (en) 2022-11-17
JPWO2021079779A1 (https=) 2021-04-29
JP7258176B2 (ja) 2023-04-14
CN114556525A (zh) 2022-05-27
US20250069907A1 (en) 2025-02-27
TWI867065B (zh) 2024-12-21

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